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arXiv:1207.6101 · Applied Physics B

Ideal multipole ion traps from planar ring electrodes

Robert Clark

Published Apr 25, 2013• 10 citations
arXivHTMLPDF
DOI
10.1007/s00340-013-5451-0

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We report on the realization of a chip-based multipole ion trap manufactured using microelectromechanical systems technology, requiring minimal manual alignment of the electrodes. It provides ion confinement in an almost field-free volume between two planes of radiofrequency electrodes, deposited on glass substrates, which allows for optical access to the trap. An analytical model of the effective trapping potential is presented and compared with numerical calculations. Stable trapping of argon ions is achieved, and a lifetime of 16 s is measured. Electrostatic charging of the chip surfaces is studied and found to agree with a numerical estimate.
In some recently proposed experiments using ion traps, a Paul trap of conventional size and design is insufficient. We have constructed a miniature Paul-Straubel trap. It has a small elliptic ring ( approximately 0.2 mm) and three pairs of planar electrodes ( approximately 2 cm part) arranged so that they form a cube. The two conventional end-cap electrodes are replaced by the six planar electrodes. The ring is heatable to a high temperature for improving the uniformity of the dc potential on the ring surface. With this trap, we hope to do such fundamental studies as the true zero-point confinement of a single ion.
Surface-electrode (SE) rf traps are a promising approach to manufacturing complex ion-trap networks suitable for large-scale quantum information processing. In this paper we present analytical methods for modeling SE traps in the gapless plane approximation, and apply these methods to two particular classes of SE traps. For the SE ring trap we derive analytical expressions for the trap geometry and strength, and also calculate the depth in the absence of control fields. For translationally symmetric multipole configurations (analogs of the linear Paul trap), we derive analytical expressions for electrode geometry and strength. Further, we provide arbitrarily good approximations of the trap depth in the absence of static fields and identify the requirements for obtaining maximal depth. Lastly, we show that the depth of SE multipoles can be greatly influenced by control fields.