The spectral detection efficiency and the dark count rate of superconducting nanowire single-photon detectors (SNSPD) have been studied systematically on detectors made from thin NbN films with different chemical compositions. Reduction of the nitrogen content in the 4 nm thick NbN films results in a decrease of the dark count rates more than two orders of magnitude and in a red shift of the cut-off wavelength of the hot-spot SNSPD response. The observed phenomena are explained by an improvement of uniformity of NbN films that has been confirmed by a decrease of resistivity and an increase of the ratio of the measured critical current to the depairing current. The latter factor is considered as the most crucial for both the cut-off wavelength and the dark count rates of SNSPD. Based on our results we propose a set of criteria for material properties to optimize SNSPD in the infrared spectral region.
The spectral detection efficiency and the dark count rate of superconducting nanowire single-photon detectors (SNSPD) have been studied systematically on detectors made from thin NbN films with different chemical compositions. Reduction of the nitrogen content in the 4 nm thick NbN films results in a decrease of the dark count rates more than two orders of magnitude and in a red shift of the cut-off wavelength of the hot-spot SNSPD response. The observed phenomena are explained by an improvement of uniformity of NbN films that has been confirmed by a decrease of resistivity and an increase of the ratio of the measured critical current to the depairing current. The latter factor is considered as the most crucial for both the cut-off wavelength and the dark count rates of SNSPD. Based on our results we propose a set of criteria for material properties to optimize SNSPD in the infrared spectral region.
We fabricated superconducting nanowire single-photon detectors (SNSPDs) made of NbTiN and NbN thin films in the same fabrication batch. Various parameters, such as critical temperature, resistivity, switching current, and kinetic inductance, were compared between the two types of SNSPDs. These data indicate that NbTiN SNSPD surpasses NbN SNSPD in many aspects, including a shorter recovery time due to smaller kinetic inductance, a lower timing jitter due to higher switching current, and better uniformity. Based on the measurement of 28 out of 121 NbTiN SNSPDs on a 2-in Si wafer, 71% of detectors show a system detection efficiency of over 50% at a dark count rate of 100 Hz, with the maximum efficiency being 77.5%.
Superconducting Nanowire Single Photon Detectors (SNSPD) are very fast, low noise devices, that detect single photons over a broad spectral range with practical quantum efficiency. The quantum efficiency drops at a certain deposited energy abruptly, the so called cutoff energy or the corresponding cutoff wavelength. The most common material to fabricate these nanowires is niobium nitride (NbN). A promising material, that has not been used for this purpose before is tantalum nitride (TaN). Many material properties of TaN and NbN are similar, but TaN has a smaller energy gap. This should make the device more sensitive to photons with lower energies. In this thesis, SNSPDs made of NbN and TaN were characterized, the quantum efficiencies were measured and the cutoff criteria were determined and compared. With the use of TaN the cutoff wavelength could be increased significantly. Measurements of quantum efficiency and dark-count rates at several temperatures and operation conditions are presented and discussed. Furthermore, the cutoff criteria are determined and compared between the materials mentioned as well as the experimental results are compared to the theoretical predictions of the detection model.
Superconducting nanowire single-photon detectors (SNSPDs) are the leading technology for low noise, high efficiency infrared single-photon detection. The basic SNSPD consists of a nanowire patterned in an ultrathin superconducting thin film, which is cooled below its critical temperature and biased close to its critical current. The absorption of a single-photon creates a resistive region, triggering a fast output voltage pulse which can be readily amplified and registered. The excellent performance of SNSPDs at near-infrared and telecommunications wavelengths has led to their adoption in important applications such as quantum secure communications, single-photon spectroscopy and single-photon LIDAR. A clear challenge for the SNSPD community is to extend the spectral range of SNSPDs into the mid infrared, and to improve material uniformity to enable the realization of large area arrays for multimode or free space coupling. The aim of this work is to evaluate potential materials for next generation mid-infrared SNSPD arrays. In this work, thin films of polycrystalline NbN and amorphous MoSi have been optimized to test the uniformity of a multipixel array configuration composed of 8 nanowire meander structures covering 10 um x 10 um area, 100 nm width and 50% filling factor. The 8-pixels SNSPD arrays have been patterned on 8 nm thickness NbN grown on high resistivity silicon (HR Si) substrate at room temperature and at 800 °C exhibiting respectively 4.4 K and 7.3 K as mean critical temperature across the pixels. The 8- pixels SNSPD array patterned on 8 nm thickness MoSi cooling the HR Si substrate to -180 °C has exhibited a mean critical temperature of 3.2 K across the pixels. Optical properties have been measured by an attenuated 1550 nm laser diode source delivered by single mode optical fibre at a controlled distance from the chip in order to broadly illuminate the array. The optical properties have been studied only for the 8 nm thickness NbN SNSPD array grown at room temperature has demonstrated uniform optical properties across pixels exhibiting similar saturation of the internal efficiency over a large bias, similar dark count rate and similar timing jitter (about 137 ps) across pixels. In the single photon regime at 1550 nm, pixels 4 and 6 of the 8 nm thickness NbN SNSPD array exhibit 28.4% and 4.7% pixel detection efficiency as measured at the bias current 95% of their respective critical current at 2.2 K.
Ever since it has been shown that two-dimensionally constricted superconductors can be used to detect single photons, effort has been invested to optimize such devices for applications. In most cases, the detection efficiency, defining the ratio of counted photons vs. incoming photons and hence the sensitivity of the device, is the most important parameter. However, depending on the applications, other parameters, like the absolute pulse strength or the dark count rate, might be important to adjust. \nPrincipally, such a superconducting nanowire single photon detector (SNSPD) consists of a very thin superconducting film, which is patterned into a narrow meandering line. To tune the properties of such devices, the optimization of the geometry and layout of such structures has already been the topic of several investigations within our group [1], [2]. However, the device performance can also be influenced by changing the material properties of the superconducting thin film which provides the basis of the SNSPD.
Superconducting nanowire single photon detectors (SNSPD) have unique characteristics of ultra low dark counts and wide spectrum sensitivity. These natures are indispensable for the evaluation of ultra-broadband parametric fluorescence, which are used for the quantum optical coherence tomography and novel optical non-linear experiments. Here we report the spectral dependence of the detection efficiency of a meander type SNSPD device, having reduced strip width of 50 nm, over a wide spectrum range up to near infra-red wavelength. The fiber coupled, meander type device was fabricated using 6 nm thick Niobium nitride (NbN) nanowires of reduced strip width, 50 nm, patterned over a MgO substrate with active area of 10 x 10 μm2. A maximum efficiency of 32% at 500 nm, 30% at 600 nm, 16% at 800 nm, 10% at 1000 nm, and 1% at 1550 nm with the normalized bias current of 0.95 (bias 37 μA ) was observed at 4.2 K. The salient feature of the device is, it exhibits a very low dark count rate (DCR) of only 2 Hz at the standard operating bias of 37 μA and ultra low DCR of 0.01Hz at 34 μA. Moreover, at this reduced bias with 0.01Hz DCR, the detection efficiency is not appreciably decreased in the visible region (32% at 500 nm and 30% at 600 nm) and an order decrease is observed (0.1%) at 1550 nm. The noise equivalent power (NEP) is of the order 10-19 WHz-1/2 in the visible region and 10-17 WHz- 1/2 in the near IR region. Ultra-broad band parametric fluorescence of band width from 791 nm to 1610 nm generated by a quasi-phase matched (QPM) device was successfully detected with this SSPD.
The quantum efficiency of superconducting nanowire single-photon detectors has been systematically studied in a broad spectral range from near ultra-violet to near infrared radiation. Detectors were made from NbN films on sapphire substrates and had thicknesses between 4 and 12 nm. The gradual reduction of the quantum efficiency with increasing wavelength is caused by a crossover from the "hot-spot" to the "vortex" detection scenario. For thicker films the wavelength demarcating the two regimes shifts to shorter wavelengths.