We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on silicon wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers, the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers, we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonators.
We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on silicon wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers, the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers, we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonators.
We report on the fabrication and characterization of superconducting coplanar waveguide (CPW) resonators based on titanium nitride (TiN) thin films deposited on 200\,mm diameter high-resistivity Si(100) substrates. We systematically investigate how deposition conditions, dry-etch power and in-situ resist strip temperature affect morphology, superconducting properties and dielectric losses. By tuning reactive sputtering conditions, three distinct preferred out-of-plane crystal orientations - (111), (200), and a mix of both are achieved. Our results demonstrate that all films exhibit similar minimal two-level system (TLS) losses, with TiN111 exhibiting the lowest median TLS losses δ~TLS, and greater robustness against reoxidation. The applied structuring process, in contrast, has a far greater influence on the TLS loss than the crystal orientation of the TiN film and, consequently, the intrinsic material properties of the superconducting layer. The lowest TLS losses for all TiN depositions were achieved with a low power etch and low temperature resist strip. An additional buffered oxide etch (BOE) treatment could remove high-loss interfacial oxides at the metal-air (MA) and substrate-air (SA) interface and recover the etch-induced TLS losses. Consequently, TiN resonators exhibiting δ~TLS values as low as 9.67×10−7 were realized. The corresponding median low-power loss, δ~LP, amounts to 11.04×10−7, which translates to an internal quality factor approaching one million. These findings highlight the critical role of process induced oxide formation at the MA and SA interfaces in limiting the performance of TiN resonators and provide a scalable, low-loss process compatible with industry-grade 200\,mm CMOS qubit fabrication workflows.
Superconducting microwave resonators are important components of superconducting quantum information and astronomy detector systems. In this paper, we show how to modify the microwave resonator performance after fabrication through surface engineering. In particular, we focus on titanium nitride (TiN)/silicon (Si) resonators because they have shown potential for achieving high-quality factors (Qis). Depending on the type of surface treatment, chemicalor plasma-based, we found Qis that vary by approximately a factor of 18. We used inductively coupled plasma (ICP) combined with reactive ion etching (RIE) for the plasma surface treatment. We found that the microwave resonator performance depends on the type of plasma environment, such as single gas (oxygen) or gas mixtures [argon/hydrogen (Ar/H2), argon/octafluorocyclobutane (Ar/C4F8), and argon/sulfur hexafluoride (Ar/SF6)], and the plasma processing conditions, such as treatment time, ICP power, and RIE power. Of the plasma surface treatments, the Ar/SF6environments with no or low ICP power showed the highest potential to improve Qi. The processing conditions determined the chemistry and roughness of the Si and TiN surfaces, TiN film thickness, and the overall TiN/Si resonator structure (edge and sidewall). Our results can be used as a guideline for optimizing the microwave resonator performance using surface treatments.
Reducing the contribution of all sources of microwave loss is important for increasing coherence times in superconducting qubits. In this paper we investigate reducing the loss by systematically removing Si substrate material from the gap region in titanium nitride coplanar waveguides fabricated on intrinsic Si substrates. By exploiting the radial dependence of the etch rate in a parallel plate reactive ion etcher, otherwise identical coplanar waveguides with only the Si gaps etched to varying depth, i.e., trenched, were created in a single TiN film within a single processing step. Measurements at these multiple depths permit the study of the loss reduction in isolation to the unintentional effects caused by any single processing step. When comparing the loss from all trench depths we found that the high power loss was similar, but in the single photon limit the loss was reduced by a factor of two for deeper trenches in agreement with predictions from finite element analysis.
Titanium nitride is an attractive material for a range of superconducting quantum-circuit applications owing to its low microwave losses, high surface inductance, and chemical stability. The physical properties and device performance, nevertheless, depend strongly on the quality of the materials. In this paper, we focus on the highly crystalline and epitaxial titanium nitride thin films deposited on sapphire substrates using magnetron sputtering at an intermediate temperature (${300}^{\ensuremath{\circ}}\mathrm{C}$). We performed a set of systematic and comprehensive material characterizations to thoroughly understand the structural, chemical, and transport properties. Microwave losses at low temperatures were studied using patterned microwave resonators, where the best internal quality factor in the single-photon regime is measured to be $3.3\ifmmode\times\else\texttimes\fi{}{10}^{6}$ and that in the high-power regime $>1.0\ifmmode\times\else\texttimes\fi{}{10}^{7}$. Adjusted with the material filling factor of the resonators, the microwave loss-tangent here compares well with the previously reported best values for superconducting resonators. This work lays the foundation of using epitaxial titanium nitride for low-loss superconducting quantum circuits.
Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into rf coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e., high and low electric field regimes, respectively. At high field, we found the highest internal quality factors (∼107) were measured for TiN with predominantly a (200)-TiN orientation. The (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, ≈2 nm, layer of SiN during the predeposition procedure. On these surfaces we found a significant increase of Qi for both high and low electric field regimes.
Understanding the correlation between material properties and microwave losses in superconducting films is a crucial subject for developing low-loss materials for quantum circuits. We focus on vanadium (V) as a novel material for superconducting quantum devices and discuss loss in V films in relation to their structural properties. Using a sputtering method, we grow four V-film structures on (001)-oriented Si wafers, employing Nb and Ta as the buffer and capping layer materials, respectively: Nb/V/Ta, Nb/V, V/Ta, and V. X-ray diffraction and atomic force microscopy reveal that the V films grown on the Nb buffer layers have higher uniformity of lattice orientation and smaller grain size than that directly grown on the Si wafer. Coplanar waveguide resonators are fabricated from the four V-film structures, and averaged photon number (⟨nph⟩) dependences of internal quality factor (Qint) are obtained by performing microwave measurements. By analyzing the obtained Qint vs ⟨nph⟩, it is found that loss at the V surface is dominated by ⟨nph⟩-independent non-two-level-system (non-TLS) losses, which can be mitigated by introducing the Ta capping layer. Furthermore, the V films on the Nb buffer layers exhibit lower Qint in the ⟨nph⟩ range from 100 to 106 and higher non-TLS loss than that directly grown on Si wafers, even though the former has higher lattice-orientation uniformity than the latter. Origins of these trends might be relevant to V oxides, of which presence at surfaces and grain boundaries in bulk regions in the V resonators is suggested by energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, and/or V hydrides.