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arXiv:1112.0456 · Optics Letters

Quantum memory in warm rubidium vapor with buffer gas

Mark Bashkansky, Fredrik K. Fatemi, Igor Vurgaftman

Published Jan 6, 2012• 45 citations
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Abstract

The realization of quantum memory using warm atomic vapor cells is appealing because of their commercial availability and the perceived reduction in experimental complexity. In spite of the ambiguous results reported in the literature, we demonstrate that quantum memory can be implemented in a single cell with buffer gas using the geometry where the write and read beams are nearly copropagating. The emitted Stokes and anti-Stokes photons display cross-correlation values greater than 2, characteristic of quantum states, for delay times up to 4 μs.

DOI
10.1364/ol.37.000142

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The realization of quantum memory using warm atomic vapor cells is appealing because of their commercial availability and the perceived reduction in experimental complexity. In spite of the ambiguous results reported in the literature, we demonstrate that quantum memory can be implemented in a single cell with buffer gas using the geometry where the write and read beams are nearly copropagating. The emitted Stokes and anti-Stokes photons display cross-correlation values greater than 2, characteristic of quantum states, for delay times up to 4 μs.
Quantum memory is considered to be one of the key elements in the fields of quantum computing and quantum communication. Warm atomic vapor cells for quantum memory in DLCZ (for Duan, Lukin, Cirac, and Zoller) protocol are appealing due to the perceived reduction in experimental complexity and commercial availability. However, reported results on quantum memory using warm vapor cells were done under widely different experimental conditions and produced ambiguous results. In order for the memory to exhibit non-classical behavior, to a high degree of certainty, the cross-correlation value between the Stokes and anti-Stokes photons needs to be greater than two. In this work we demonstrate quantum memory with cross-correlation value between the Stokes and anti-Stokes photons greater than two lasting for 4 μs using warm Rb vapor with buffer gas for nearly co-propagating write and read beams.
Quantum memory is regarded as one of the essential components in the fields of quantum computing and quantum communication. Warm atomic vapor cells for quantum memory, as originally described in DLCZ (for Duan, Lukin, Cirac, and Zoller) protocol, are appealing due to the perceived reduction in experimental complexity and commercial availability. However, published studies on quantum memory using warm vapor cells were performed under widely dissimilar experimental conditions and reported ambiguous results. In order for the memory to exhibit non-classical behavior to a high degree of certainty, the cross-correlation value between the Stokes and anti-Stokes photons needs to be greater than two. In this work we demonstrate quantum memory with cross-correlation value between the Stokes and anti-Stokes photons greater than two lasting for 4 μs using warm Rb vapor with buffer gas for nearly co-propagating write and read beams.