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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Quantum memory in warm Rb vapor with buffer gas

Mark Bashkansky, Fredrik K. Fatemi, I. Vurgaftman

Published Feb 9, 2012• 0 citations
Publisher

Abstract

Quantum memory is considered to be one of the key elements in the fields of quantum computing and quantum communication. Warm atomic vapor cells for quantum memory in DLCZ (for Duan, Lukin, Cirac, and Zoller) protocol are appealing due to the perceived reduction in experimental complexity and commercial availability. However, reported results on quantum memory using warm vapor cells were done under widely different experimental conditions and produced ambiguous results. In order for the memory to exhibit non-classical behavior, to a high degree of certainty, the cross-correlation value between the Stokes and anti-Stokes photons needs to be greater than two. In this work we demonstrate quantum memory with cross-correlation value between the Stokes and anti-Stokes photons greater than two lasting for 4 μs using warm Rb vapor with buffer gas for nearly co-propagating write and read beams.

DOI
10.1117/12.906433

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Quantum memory is considered to be one of the key elements in the fields of quantum computing and quantum communication. Warm atomic vapor cells for quantum memory in DLCZ (for Duan, Lukin, Cirac, and Zoller) protocol are appealing due to the perceived reduction in experimental complexity and commercial availability. However, reported results on quantum memory using warm vapor cells were done under widely different experimental conditions and produced ambiguous results. In order for the memory to exhibit non-classical behavior, to a high degree of certainty, the cross-correlation value between the Stokes and anti-Stokes photons needs to be greater than two. In this work we demonstrate quantum memory with cross-correlation value between the Stokes and anti-Stokes photons greater than two lasting for 4 μs using warm Rb vapor with buffer gas for nearly co-propagating write and read beams.
Quantum memory is regarded as one of the essential components in the fields of quantum computing and quantum communication. Warm atomic vapor cells for quantum memory, as originally described in DLCZ (for Duan, Lukin, Cirac, and Zoller) protocol, are appealing due to the perceived reduction in experimental complexity and commercial availability. However, published studies on quantum memory using warm vapor cells were performed under widely dissimilar experimental conditions and reported ambiguous results. In order for the memory to exhibit non-classical behavior to a high degree of certainty, the cross-correlation value between the Stokes and anti-Stokes photons needs to be greater than two. In this work we demonstrate quantum memory with cross-correlation value between the Stokes and anti-Stokes photons greater than two lasting for 4 μs using warm Rb vapor with buffer gas for nearly co-propagating write and read beams.
The realization of quantum memory using warm atomic vapor cells is appealing because of their commercial availability and the perceived reduction in experimental complexity. In spite of the ambiguous results reported in the literature, we demonstrate that quantum memory can be implemented in a single cell with buffer gas using the geometry where the write and read beams are nearly copropagating. The emitted Stokes and anti-Stokes photons display cross-correlation values greater than 2, characteristic of quantum states, for delay times up to 4 μs.
Warm-atomic-vapor cells may be employed as quantum-memory components in an experimentally convenient implementation of the Duan-Lukin-Cirac-Zoller protocol. Previous studies have shown the performance of these cells is limited by the combination of collisional fluorescence during the writing process and four-wave mixing during the reading process and have proposed to overcome this by a combination of optimized detuning and prepumping with circularly polarized write and read beams. Here we show that the Raman matrix elements involving the excited PPP (${F}^{\ensuremath{'}}=I\ensuremath{-}\frac{1}{2}$ and ${F}^{\ensuremath{'}}=I+\frac{1}{2}$) levels of all alkali atoms are always equal in magnitude and opposite in sign when the write and the anti-Stokes (Stokes) photons have the opposite helicity, and the Raman transitions via the two levels interfere destructively. The existence of an optimal detuning is demonstrated for a given dark-count rate of the single-photon detector. The predicted behavior is observed experimentally in a warm Rb cell with buffer gas.
Abstract Quantum memory capable of stopping flying photons and storing their quantum coherence is essential for scalable quantum technologies. A room-temperature broadband quantum memory will enable the implementation of large-scale quantum systems for real-life applications. Due to either intrinsic high noises or short lifetime, it is still challenging to find a room-temperature broadband quantum memory beyond conceptual demonstration. Here, we present a far off-resonance Duan–Lukin–Cirac–Zoller (FORD) protocol and demonstrate the broadband quantum memory in room-temperature atoms. We observe a low unconditional noise level of 10−4 and a cross-correlation up to 28. A strong violation of Cauchy–Schwarz inequality indicates high-fidelity generation and preservation of non-classical correlation. Furthermore, the achieved cross-correlation in room-temperature atoms exceeds the key boundary of 6, above which quantum correlation is able to violate Bell’s inequality. Our results open up the door to an entirely new realm of memory-enabled quantum applications at ambient conditions.
Atomic vapor cells with buffer gas have a number of advantages when employed as quantum memory blocks based on the DLCZ (Duan-Lukin-Cirac-Zoller) protocol: operation slightly above room temperature, ease of handling, as well as commercial availability. Nevertheless, the signal-to-noise ratio in the current implementations is severely limited by the simultaneous presence of collisional fluorescence and the four-wave mixing noise. In our previous work, we have shown how to minimize the influence of the former on the writing process and provided an unambiguous demonstration of quantum memory lasting for 4 μs. An elegant approach to suppress the four-wave-mixing noise by pre-pumping to the state with the hyperfine sublevel with the maximum value was proposed by Walther et al., Int. J. Quantum Inform. 5, 51 (2007). Here we show that this approach is fundamentally limited by the cancellation of the Raman matrix elements involving the Fˊ= 1 and Fˊ= 2 levels, which occurs for all experimental conditions in the S → P transitions of all alkali atoms. A detuning that maximizes the signal-to-noise ratio is shown to exist for a given detector dark-count rate.
Memory-assisted quantum networks require photon sources with controllable temporal and correlation properties. The Duan-Lukin-Cirac-Zoller (DLCZ) protocol provides a platform based on spontaneous Raman scattering in atomic ensembles, but a unified predictive theory connecting control parameters to correlations under realistic propagation and noise conditions remains lacking. Here we present a propagation-inclusive open-system quantum theory that retains write-induced population redistribution while combining Heisenberg-Langevin dynamics with Maxwell-Schrödinger propagation. We experimentally validate its key predictions. The theory predicts time-dependent Stokes generation, spin-wave evolution, retrieved anti-Stokes wavepackets, and time-resolved cross-correlations. Experiments confirm robust correlations under retrieval tuning and enhanced correlations for shorter write pulses, consistent with the different scaling of correlated coincidences and accidental backgrounds with the mean spin-wave excitation number. Classically controlled retrieval enables temporal gating and slicing of the anti-Stokes wavepacket, establishing a quantitative framework for correlation engineering in memory-compatible DLCZ photon sources.