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arXiv:1110.4576 · Applied Physics Letters

Tantalum nitride superconducting single-photon detectors with low cut-off energy

A. Engel, A. Aeschbacher, K. Inderbitzin, A. Schilling, K. Il’in, M. Hofherr, M. Siegel, A. Semenov, H.-W. Hübers

Published Feb 6, 2012• 100 citations
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Abstract

Materials with a small superconducting energy gap are expected to favor a high detection efficiency of low-energy photons in superconducting nanowire single-photon detectors. We developed a TaN detector with smaller gap and lower density of states at the Fermi energy than in comparable NbN devices, while other relevant parameters remain essentially unchanged. The observed reduction of the minimum photon energy required for direct detection is in line with model predictions of ≈1/3 as compared to NbN.

DOI
10.1063/1.3684243

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Materials with a small superconducting energy gap are expected to favor a high detection efficiency of low-energy photons in superconducting nanowire single-photon detectors. We developed a TaN detector with smaller gap and lower density of states at the Fermi energy than in comparable NbN devices, while other relevant parameters remain essentially unchanged. The observed reduction of the minimum photon energy required for direct detection is in line with model predictions of ≈1/3 as compared to NbN.
Materials with a small superconducting energy gap are expected to favor a high detection efficiency of low-energy photons in superconducting nanowire single-photon detectors. We developed a TaN detector with smaller gap and lower density of states at the Fermi energy than in comparable NbN devices, while other relevant parameters remain essentially unchanged. The observed reduction of the minimum photon energy required for direct detection is in line with model predictions of ≈1/3 as compared to NbN.
Superconducting Nanowire Single Photon Detectors (SNSPD) are very fast, low noise devices, that detect single photons over a broad spectral range with practical quantum efficiency. The quantum efficiency drops at a certain deposited energy abruptly, the so called cutoff energy or the corresponding cutoff wavelength. The most common material to fabricate these nanowires is niobium nitride (NbN). A promising material, that has not been used for this purpose before is tantalum nitride (TaN). Many material properties of TaN and NbN are similar, but TaN has a smaller energy gap. This should make the device more sensitive to photons with lower energies. In this thesis, SNSPDs made of NbN and TaN were characterized, the quantum efficiencies were measured and the cutoff criteria were determined and compared. With the use of TaN the cutoff wavelength could be increased significantly. Measurements of quantum efficiency and dark-count rates at several temperatures and operation conditions are presented and discussed. Furthermore, the cutoff criteria are determined and compared between the materials mentioned as well as the experimental results are compared to the theoretical predictions of the detection model.
The quantum efficiency of NbN and NbTiN superconducting single photon detectors drops with decreasing photon energy. A lower gap material would enable single photon detection deeper in the infrared. We have fabricated a NbSi detector and compare its characteristics with a NbTiN device. NbSi (TC≃2 K) has a smaller superconducting gap than NbTiN or NbN (TC≃15 K). We measure the detection efficiency for a wavelength range from 1100 to 1900 nm. In this range the NbSi detector shows a 10-fold increase in relative efficiency with respect to the NbTiN detector.
Superconducting nanowire single photon detectors (SNSPD) offer excellent performance for infrared single photon detection, combining high efficiency, low timing jitter, low dark count rates and high photon counting rates. Promising application areas for SNSPDs include quantum key distribution, space-to-ground communications and single photon remote sensing [1]. SNSPDs are typically made with ultrathin niobium nitride (NbN) films with thickness 4 nm and a superconducting transition temperature above 9 K. NbN offers high performance in the near infrared but their sensitivity drops at wavelengths beyond 2 um. There is growing interest in potential photon counting applications in the mid infrared domain (for example remote sensing of greenhouse gases in the atmosphere [2]). One way to overcome the wavelength limit in NbN SNSPDs is to use films with a lower superconducting energy gap [3]. Here we report on the study of SNSPDs fabricated with thin films of titanium nitride (TiN). We compare TiN films deposited by atomic layer deposition (ALD) and by magnetron sputtering. The TiN films range in thickness from 5 to 60 nm, with superconducting transition temperatures from ~1 K to 3.5 K. We have analyzed the films via transmission electron microscopy and variable angle spectroscopic ellipsometry. We characterize TiN SNSPDs performance from near to mid-infrared at wavelengths (1-4 um) with fast optical parametric oscillator (OPO) source. We compare the performance of TiN SNSPDs to devices based on other lower gap materials: MoSi, NbTiN, WSi. [1] Natarajan et al Superconductor Science and Technology 25 063001 (2012) [2] Abshire et al Laser Applications to Chemical, Security and Environmental Analysis, (Optical Society of America, 2008) paper LMA4 [3] Verma et al Applied Physics Letters 105 022602 (2014)
Superconducting niobium nitride (NbN) continues to be investigated decades on, largely in part to its advantageous superconducting properties and wide use in superconducting electronics. Particularly, NbN-based superconducting nanowire single-photon detectors (SNSPDs) have shown exceptional performance and NbN remains as the material of choice in developing future generation quantum devices. In this perspective, we describe the processing-structure-property relationships governing the superconducting properties of NbN films. We further discuss the complex interplay between the material properties, processing parameters, substrate materials, device architectures, and performance of SNSPDs. We also highlight the latest progress in optimizing SNSPD performance parameters.
Photonic integrated circuits hold great potential for realizing quantum technology. Efficient single-photon detectors are an essential constituent of any such quantum photonic implementation. In this regard waveguide-integrated superconducting nanowire single-photon detectors are an ideal match for achieving advanced photon counting capabilities in photonic integrated circuits. However, currently considered material systems do not readily satisfy the demands of next generation nanophotonic quantum technology platforms with integrated single-photon detectors, in terms of refractive-index contrast, band gap, optical nonlinearity, thermo-optic stability and fast single-photon counting with high signal-to-noise ratio. Here we show that such comprehensive functionality can be realized by integrating niobium titanium nitride superconducting nanowire single-photon detectors with tantalum pentoxide waveguides. We demonstrate state-of-the-art detector performance in this novel material system, including devices showing 75% on-chip detection efficiency at tens of dark counts per second, detector decay times below 1 ns and sub-30 ps timing accuracy for telecommunication wavelengths photons at 1550 nm. Notably, we realize saturation of the internal detection efficiency over a previously unattained bias current range for waveguide-integrated niobium titanium nitride superconducting nanowire single-photon detectors. Our work enables the full set of high-performance single-photon detection capabilities on the emerging tantalum pentoxide-on-insulator platform for future applications in integrated quantum photonics.