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arXiv:1109.5634 · Advanced Materials

Homoepitaxial Growth of Single Crystal Diamond Membranes for Quantum Information Processing

Igor Aharonovich, Jonathan C. Lee, Andrew P. Magyar, Bob B. Buckley, Christopher G. Yale, D. D. Awschalom, Evelyn L. Hu

Published Jan 31, 2012• 84 citations
arXivHTMLPDF

Abstract

Homoepitaxial growth of single crystal diamond membranes is demonstrated employing a microwave plasma chemical vapor deposition technique. The membranes possess excellent structural, optical, and spin properties, which make them suitable for fabrication of optical microcavities for applications in quantum information processing, photonics, spintronics, and sensing.

DOI
10.1002/adma.201103932

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Homoepitaxial growth of single crystal diamond membranes is demonstrated employing a microwave plasma chemical vapor deposition technique. The membranes possess excellent structural, optical, and spin properties, which make them suitable for fabrication of optical microcavities for applications in quantum information processing, photonics, spintronics, and sensing.
© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Color centers in diamond have garnered significant attention for applications in integrated quantum photonics. The availability of thin (~ hundred of nanometers) diamond membranes is paramount to achieve this goal. In this paper, we describe in detail a robust, reproducible and cost effective fabrication method that enables engineering high quality thin diamond membranes with uniform distribution of germanium vacancies employing microwave plasma chemical vapor deposition. We use a combination of different germanium precursors for homogeneous doping of the membranes to increase the probability of germanium incorporation into the diamond lattice. Our fabrication methodology can be further extended to implementation of other color centers in thin diamond membranes and be used for engineering quantum photonic devices.
We detail the passivation of ultra-high purity diamond and subsequent homoepitaxial growth of thin diamond layers containing spectrally stable nitrogen vacancy (NV) centres. We demonstrate a reduction of three orders of magnitude in the density of fluorescent NV centres in single crystal diamond due to hydrogen plasma treatment. This reduced fluorescence extends to a depth of 80 μm below the diamond surface and provides a clean slate upon which subsequent growth and characterisation of high quality isolated NV centres is possible. The photoluminescence excitation linewidth of NV centres in a 100 nm thick layer are measured to be as low as 140 MHz at T < 12 K, with favourable spin properties. The combination of these two methods is an important step toward scalable and practical diamond based photonic devices suitable for quantum information processing.
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Group IV color centers in diamond are promising single-photon emitters for quantum information processing and networking. Among them, the tin-vacancy (SnV) center stands out due to its long spin coherence times at cryogenic temperatures above 1 K. While SnV centers have been realized using various fabrication routes, their in situ formation via microwave plasma-enhanced chemical vapor deposition (MW PE CVD) remains relatively unexplored. In this study, SnV centers, identified by a zero-phonon line (ZPL) near 620 nm, were synthesized in nanocrystalline diamond and free-standing microcrystalline diamond using tin oxide (SnO 2 ) as a dopant source at substrate temperatures of 750°C and 850°C. Photoluminescence measurements reveal that lowering the substrate temperature enhances both the ZPL intensity and spatial uniformity of SnV centers. These results highlight substrate temperature as a key parameter for controlling SnV incorporation during MW PE CVD growth and provide insights into optimizing fabrication strategies for diamond-based quantum technologies.
Abstract Diamond hosts a wide variety of colour centres that have demonstrated outstanding optical and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most investigated owing to its superior characteristics, which promise the development of highly sophisticated quantum devices, in particular for sensing applications. Nevertheless, harnessing the potential of these centres mainly relies on the availability of high quality and purity diamond single crystals that need to be specially designed and engineered for this purpose. Plasma assisted chemical vapour deposition (CVD) has become a key enabling technology in this field of research. Nitrogen can indeed be directly doped in situ into a high crystalline quality diamond matrix in a controlled way, allowing the production of single isolated centres or ensembles that can potentially be integrated into a device. In this paper we will provide an overview of the requirements for synthesizing ‘quantum-grade’ diamond films using CVD. These include the reduction of impurities and surrounding spins that limit coherence times, the control of NV density in a wide range of concentrations as well as their spatial localization within the diamond. Enhancing the charge state and preferential orientation of the colour centres is also discussed. These improvements in material fabrication have contributed to positioning diamond as one of the most promising solid-state quantum systems and the first industrial applications in sensing are just starting to emerge.
Applications of nitrogen-vacancy (NV) centers in diamond in quantum technology have attracted considerable attention in recent years. Deterministic generation of ensembles of NV centers can advance the research on quantum sensing, many-body quantum systems, multipartite entanglement, and so on. Here we report the complete process of controlled generation of NV centers in diamond as well as their characterization: growing diamond films through chemical vapor deposition (CVD), ion implantation, and spectroscopic characterization of the defect centers using a confocal microscope. A microwave-assisted CVD setup is presented which we constructed for the preparation of single-crystalline homoepitaxial diamond films. The films were prepared with minimized nitrogen concentration, which is confirmed through photoluminescence measurements. We demonstrate an in situ ultrahigh vacuum (UHV) implantation and heating process for creation of NV centers using a novel experimental setup. For the first time hot implantation has been shown which prevents surface charging effects. We do not observe graphitization due to UHV heating. By optimizing the implantation parameters it has been possible to implant NV centers in a precise way. We present large area mapping of the samples to determine the distribution of the centers and describe the characterization of the centers by spectroscopic techniques. Reducing the decoherence caused by environmental noise is of primary importance for many applications in quantum technology. We demonstrate improvement on coherence time T2{T}_{2}T2​ of the NV spins by suppression of their interaction with the surrounding spin bath using robust dynamical decoupling sequences.