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arXiv:1105.1956 · Superconductor Science and Technology

Balanced superconductor–insulator–superconductor mixer on a 9 µm silicon membrane

M. Westig, K Jacobs, J Stutzki, M Schultz, M Justen, C E Honingh

Published Jul 1, 2011• 32 citations
arXivHTMLPDF

Abstract

We present a 380-520 GHz balanced superconductor-insulator-superconductor (SIS) mixer on a single silicon substrate. All radio-frequency (RF) circuit components are fabricated on a $9 μ$m thick membrane. The intermediate frequency (IF) is separately amplified and combined. The balanced mixer chip, using Nb/Al/Al$_{2}$O$_{3}$/Nb SIS junctions, is mounted in a tellurium copper waveguide block at 4.2 K using Au beam lead contacts. We find uncorrected minimum receiver double-sideband noise temperatures of 70 K and a noise suppression of up to 18 dB, measured within a 440-495 GHz RF and a 4-8 GHz IF bandwidth, representing state-of-the-art device performance.

DOI
10.1088/0953-2048/24/8/085012

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•Apr 1, 2008•4 citations
We present a 380-520 GHz balanced superconductor-insulator-superconductor (SIS) mixer on a single silicon substrate. All radio-frequency (RF) circuit components are fabricated on a 9μ9 μ9μm thick membrane. The intermediate frequency (IF) is separately amplified and combined. The balanced mixer chip, using Nb/Al/Al2_{2}2​O3_{3}3​/Nb SIS junctions, is mounted in a tellurium copper waveguide block at 4.2 K using Au beam lead contacts. We find uncorrected minimum receiver double-sideband noise temperatures of 70 K and a noise suppression of up to 18 dB, measured within a 440-495 GHz RF and a 4-8 GHz IF bandwidth, representing state-of-the-art device performance.
Abstract We developed a low-noise, compact, balanced superconductor–insulator–superconductor (SIS) mixer, operating in the 787–950 GHz radio frequency range. A waveguide mixer block was designed to integrate all the key components, such as a radio frequency (RF) 90° hybrid coupler, two identical SIS mixer chips, bias-tees, and an intermediate frequency power-combiner. The RF waveguide 90° hybrid coupler consists of branch lines with wide slots optimized by numerical simulation, for ease of fabrication. The balanced mixer was installed into a cartridge type receiver, originally developed for the Atacama Large Millimeter/submillimeter Array Band 10 (787–950 GHz). The receiver demonstrated double sideband noise temperatures of approximately 200 K for most of the band, without any correction for loss in front of the receiver. The local oscillator noise rejection ratio was estimated to be more than 15 dB within the measured frequency range.
A fixed-tuned SIS(Superconductor-Insulator-Superconductor) mixer across 120∼180 GHz band has been developed. This mixer employs an SIS chip fabricated by Nobeyama radio observatory which consists of a series array of 6 Nb/Al-AlO/Nb junctions in a microstrip line on a fused quartz substrate. The SIS chip is placed at the center of the half-height waveguide mixer mount to have a good incoming signal coupling over the whole frequency band. No mechanical tuner was used in the SIS mixer and the RF signal and local oscillator power are injected to the mixer via a cooled cross-guide coupler. In order to prevent the IF signal loss, the If output impedance of the SIS mixer was matched to the 50 input impedance of the IF chain. Measured double sideband noise temperatures of a receiver using the SIS mixer are 32∼131 K over 120∼180 GHz band. The developed SIS mixer is now in use for radio astronomical observations on the TRAO 14 m radio telescope.
We have developed a low-noise balanced superconductor-insulator-superconductor (SIS) mixer using a waveguide 3-dB 90-degree hybrid coupler over the radio frequency (RF) range of 790-950 GHz and intermediate frequency range of 4-12 GHz at an operating temperature of 4 K. The RF coupler was carefully designed in regards to machining errors so that the entire amplitude imbalance including the mixer gain became smaller. The fabricated coupler was characterized at both room and cryogenic temperature. The receiver noise temperature of the balanced SIS mixer was below 350 K over the entire frequency band and the local oscillator (LO) noise rejection ratio was estimated to be more than 15 dB. This result is equivalent to state-ofthe-art mixer performance at this frequency range.
We present the design and the performance of a fixed-tuned, all niobium (Nb) Superconductor-Insulator-Superconductor (SIS) mixer covering RF frequencies from 163 to 211 GHz with 4-8 GHz IF bandwidth. The mixer uses two Nb/Al-AlOx/Nb junctions of size 3 μm2each with theRnAproduct of 30 Ω·μm2, in a twin junction configuration. An local oscillator (LO) directional coupler made of superconducting lines with slots in the ground plane is integrated on the SIS mixer chip. The isolated port of the LO coupler is terminated using a wide-band resistive load with a sheet resistance of 12 Ω/□. The SIS tuning circuitry is optimized to achieve best power match between the twin junctions and the embedding circuitry. The measurement of the double sideband mixer noise at 171 GHz shows that the receiver noise temperature is approximately 17 K, which is just 2hf/k. The estimated noise contribution from the RF loss and the IF chain at 176 GHz LO frequency is 8 K and 7.5 K respectively, resulting in a SIS mixer noise ofhf/2k. The mixer noise performance across the entire RF band varies between 19 to 25 K. This is to our knowledge the best reported noise temperature at these frequencies till now.
This paper describes the first experimental results for a waveguide-type all-NbN superconductor-insulator-superconductor (SIS) heterodyne mixer on an MgO substrate designed to operate over the gap frequency of Nb. The mixer consists of an NbN/MgO/NbN junction, which has a length of one wavelength at 880GHz as a tuning circuit, an NbN/MgO/NbN microstrip as a λ/4 impedance transformer, and an RF choke filter. The mixer chip was designed using a high-frequency-structure simulator. Its return-loss and embedding-impedance characteristics were examined using a 180-times-scaled mixer model. By optimizing the cutting and polishing processes for the MgO substrate, we were able to fabricate the mixer chip with an accuracy of less than 5 μm. We succeeded in mounting the chip on a mixer block and in estimating the receiver noise temperature. The uncorrected minimum double-sideband receiver noise temperature was 740 K at 824 GHz. A comparison of the receiver noise temperature in a quasi-optical SIS mixer fabricated on the same wafer as the waveguide mixer showed that input noise was the major contributor to receiver noise in the waveguide mixer.
Abstract — We present the design and the experimental results of a fixed-tuned sideband-separating superconductor-insulator-superconductor (SIS) mixer for 385- 500 GHz. The sideband separation is achieved using a quadrature scheme, where two separate DSB mixer blocks are combined with an intermediate waveguide component containing the LO waveguide distribution circuitry and RF waveguide hybrid. The intermediate waveguide piece is fabricated by using copper micromachining, which gives dimensions ’ accuracy better than 1 μm. The RF signal coming from the waveguide hybrid is coupled to the SIS junctions through an E-probe with integrated bias-T. We implemented an on-chip LO injection solution, where the LO coupler is integrated onto the mixer chip and fabricated together with the SIS junction and the tuning circuitry. The on-chip LO coupler is made as a combination of superconducting microstrip lines and slot-lines (branches), which gives almost a lossless solution. With the fabrication accuracy better than 0.5 μm by using optical lithography, the circuitry is proven to give a good performance following the simulations expectations. I.