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arXiv:1103.5256 · Applied Physics Letters

Surface-electrode ion trap with integrated light source

Tony Hyun Kim, Peter F. Herskind, Isaac L. Chuang

Published May 23, 2011• 31 citations
arXivHTMLPDF

Abstract

An atomic ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupole qubit transition of S88r+. Through in situ translation of the nodal point of the trapping field, the Gaussian beam profile of the fiber output is imaged, and the fiber-ion displacement, in units of the mode waist at the ion, is optimized to within 0.13±0.10 of the mode center despite an initial offset of 3.30±0.10. Fiber-induced charging by 125 μW of 674 nm light is observed to be ∼10 V/m at an ion height of 670 μm, with charging and discharging time constants of 1.6±0.3 s and 4.7±0.6 s, respectively. This work is of importance to large-scale, ion-based quantum information processing, where optics integration in surface-electrode designs may be a crucial enabling technology.

DOI
10.1063/1.3593496

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An atomic ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupole qubit transition of S88r+. Through in situ translation of the nodal point of the trapping field, the Gaussian beam profile of the fiber output is imaged, and the fiber-ion displacement, in units of the mode waist at the ion, is optimized to within 0.13±0.10 of the mode center despite an initial offset of 3.30±0.10. Fiber-induced charging by 125 μW of 674 nm light is observed to be ∼10 V/m at an ion height of 670 μm, with charging and discharging time constants of 1.6±0.3 s and 4.7±0.6 s, respectively. This work is of importance to large-scale, ion-based quantum information processing, where optics integration in surface-electrode designs may be a crucial enabling technology.
An atomic ion is trapped at the tip of a single-mode optical fiber in a cryogenic (8 K) surface-electrode ion trap. The fiber serves as an integrated source of laser light, which drives the quadrupolequbit transition of [superscript 88]Sr[superscript +]. Through in situ translation of the nodal point of the trapping field, the Gaussian beam profile of the fiber output is imaged, and the fiber-ion displacement, in units of the mode waist at the ion, is optimized to within 0.13 ± 0.10 of the mode center despite an initial offset of 3.30 ± 0.10. Fiber-induced charging by 125 μW of 674 nm light is observed to be ~10 V/m at an ion height of 670 μm, with charging and discharging time constants of 1.6 ± 0.3 s and 4.7 ± 0.6 s, respectively. This work is of importance to large-scale, ion-based quantum information processing, where optics integration in surface-electrode designs may be a crucial enabling technology.
Integration of fiber optics may play a critical role in the development of quantum information processors based on trapped ions and atoms by enabling scalable collection and delivery of light and coupling trapped ions to optical microcavities. We trap 24Mg+ ions in a surface-electrode Paul trap that includes an integrated optical fiber for detecting 280-nm fluorescence photons. The collection numerical aperture is 0.37, and total collection efficiency is 2.1%. The ion can be positioned between 80 and 100 μm from the tip of the fiber by use of an adjustable rf pseudopotential.
We present an ion-trap platform on borosilicate glass with an integrated femtosecond-laser-written waveguide for on-chip light delivery. The optical layer is physically separated from the electrode substrate and bonded atop the trap, remaining compatible with silicon-based integration. We engineer single-mode low-loss guidance at 729 nm with tunable mode-field diameter and achieve low-loss curved waveguides down to a radius of curvature of 6 mm. We also extend single-mode operation to a wavelength of 405 nm. The fabrication process is compatible with the industrial fabrication of a single-metal-layer surface-electrode trap, including active fiber alignment and bonding. We validate the platform in a cryogenic trapped-ion system with 40^{40}40Ca+^++, demonstrating trapping, shuttling the ion to a zone in front of the waveguide, and coherent operations driven by 729 nm light delivered through the integrated waveguide. We characterize the effect of the exposed dielectric on the ion and measure stray electric fields that show slow drift at a timescale of hours. The architecture is compatible with hybrid micro-optics (e.g. pick-and-place lenses) to realize single ion addressing and provides a robust, scalable route to integrated light delivery for trapped-ion devices.
Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 68 μm above the chip. Simulations show that the couplers achieve a diffraction-limited spot with a 4.3 μm beam waist along the trap axis and 2.2 μm perpendicular to the trap axis. Controlled interference of the TE 00 and TE 10 modes results in crosstalk of –20 dB to –30 dB at ion separations of 5–8 μm when addressing ions individually, and down to –60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.
Ion trap systems allow the faithful storage and manipulation of qubits encoded in the energy levels of the ions, and can be interfaced with photonic qubits that can be transmitted to connect remote quantum systems. Single photons transmitted from two remote sites, each entangled with one quantum memory, can be used to entangle distant quantum memories by interfering on a beam splitter. Efficient remote entanglement generation relies upon efficient light collection from single ions into a single mode fiber. This can be realized by integrating an ion trap with an optical cavity and employing the Purcell effect for enhancing the light collection. Remote entanglement can be used as a resource for a quantum repeater for provably secure long-distance communication or as a method for communicating within a distributed quantum information processor. I present the integration of a 1 mm optical cavity with a micro-fabricated surface ion trap. The plano-concave cavity is oriented normal to the chip surface where the planar mirror is attached underneath the trap chip. The cavity is locked using a 780 nm laser which is stabilized to Rubidium and shifted to match the 369 nm Doppler transition in Ytterbium. The linear ion trap allows ions to be shuttled in and out of the cavity mode. The Purcell enhancement of spontaneous emission into the cavity mode would then allow efficient collection of the emitted photons, enabling faster remote entanglement generation.
Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 80 μμμm above the chip. Simulations show that the couplers achieve diffraction-limited spot with a 4.3 μμμm beam waist along the trap axis and 2.2 μμμm perpendicular to the trap axis. Controlled interference of the TE10_{\text{10}}10​ and TE20_{\text{20}}20​ modes results in crosstalk of -20 dB to -30 dB at ion separations of 5-8 μμμm when addressing ions individually, and down to -60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.