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arXiv:1008.0522 · Physical Review B

Derivation of the t−J model for finite doping

Simone A. Hamerla, Sebastian Duffe, Götz Silvester Uhrig

Published Dec 14, 2010• 18 citations
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Abstract

Mapping complex problems to simpler effective models is a key tool in theoretical physics. One important example in the realm of strongly correlated fermionic systems is the mapping of the Hubbard model to a $t\text{\ensuremath{-}}J$ model which is appropriate for the treatment of doped Mott insulators. Charge fluctuations across the charge gap are eliminated. So far the derivation of the $t\text{\ensuremath{-}}J$ model is only known at half filling or in its immediate vicinity. Here we present the necessary conceptual advancement to treat finite doping. The results for the ensuing coupling constants are presented. Technically, the extended derivation relies on self-similar continuous unitary transformations and normal-ordering relative to a doped reference ensemble. The range of applicability of the derivation of $t\text{\ensuremath{-}}J$ model is determined as function of the doping $\ensuremath{\delta}$ and the ratio bandwidth $W$ over interaction $U$.

DOI
10.1103/physrevb.82.235117

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Mapping complex problems to simpler effective models is a key tool in theoretical physics. One important example in the realm of strongly correlated fermionic systems is the mapping of the Hubbard model to a t\ensuremath-Jt\text{\ensuremath{-}}Jt\ensuremath-J model which is appropriate for the treatment of doped Mott insulators. Charge fluctuations across the charge gap are eliminated. So far the derivation of the t\ensuremath-Jt\text{\ensuremath{-}}Jt\ensuremath-J model is only known at half filling or in its immediate vicinity. Here we present the necessary conceptual advancement to treat finite doping. The results for the ensuing coupling constants are presented. Technically, the extended derivation relies on self-similar continuous unitary transformations and normal-ordering relative to a doped reference ensemble. The range of applicability of the derivation of t\ensuremath-Jt\text{\ensuremath{-}}Jt\ensuremath-J model is determined as function of the doping \ensuremathδ\ensuremath{\delta}\ensuremathδ and the ratio bandwidth WWW over interaction UUU.
I derive a mapping of the Hubbard and t-J models onto a description in terms of spins and spin-less fermions. This transformation can be combined with the Fedotov-Popov fermionisation technique, where spin-1/2 systems are mapped onto two-component lattice fermions with imaginary chemical potential. The result is a generalisation of the Fedotov-Popov formulation to the case of finite doping that makes it possible to treat the Hubbard and t-J models as spin-models in the presence of a finite density of holes and doublons. While strongly interacting lattice fermions near half-filling is an extremely challenging problem, spin-systems can be efficiently treated with current simulation techniques.
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behavior. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band. To this end, we focus on the two-dimensional Hubbard model. Because the charge gap arises from on-site correlations, we have been refining the nonperturbative approach of Matsumoto and Mancini [Phys. Rev. B 55, 2095 (1997)] which incorporates local physics. Crucial to this method is a self-consistent two-site dynamical cluster expansion which builds in the nearest-neighbor energy scale J. At half-filling, we find that the spectral function possesses a gap of order U and is devoid of any coherent quasiparticle peaks although ordering or charge fractionalization are absent. At low temperatures, local antiferromagnetic correlations emerge. In the doped case, we find that the Fermi surface exceeds the Luttinger volume. The breakdown of Luttinger's theorem in the underdoped regime is traced both to the dynamically generated Mott gap as well to a nonvanishing of the imaginary part of the self-energy at the Fermi level. Spectral weight transfer across the Mott gap also emerges as a ubiquitous feature of a doped Mott insulator and suggests that high- and low-energy scales are inseparable. Additionally in the underdoped regime, we find that a pseudogap exists in the single-particle density of states as well as in the heat capacity. The pseudogap (which is set by the energy scale t2/U){t}^{2}/U)t2/U) is argued to be a ubiquitous feature of a lightly doped Mott state and simply represents the fact that hole transport involves double occupancy. In analogy with the Mott gap and antiferromagnetism, we propose that ordering may also accompany the formation of a pseudogap. We suggest a current pattern within a one-band model that preserves translational but breaks time-reversal symmetry along the canonical x and y axes but not along $x=\ifmmode\pm\else\textpm\fi{}y$ that is consistent with the experimental observations. Finally, we show that the Hall coefficient in a doped Mott insulator must change sign at a doping level x<1/3.x<1/3.x<1/3. The sign change is tied to a termination of strong correlation physics in the doped Mott state.
A new decoupling scheme is developed for the Hubbard model which provides a unified description of the spin-symmetric (paramagnetic metallic and insulating) phases as well as the broken-symmetry AFI phase. Independent of magnetic ordering, the scheme yields, in the lowest order, the correct strong-coupling bandwidth of order J (for the NN hopping model) and band gap of order U, a non-zero critical interaction strength (above which the band gap opens) only if same sublattice hopping (e.g., NNN hopping) is also present, and the correct integrated spectral weights (1/2 per spin) in each band for the half-filled model. The effects of charge and spin fluctuations, including spin twisting due to finite spin correlation length, are investigated with a static, random approximation. A self-consistent evaluation of the disorder-averaged self energy within the CPA is carried out numerically. Fluctuations activate the hopping term at first order resulting in band broadening, and the consequent decrease in the band gap with fluctuation strength is obtained for several U values in two and three dimensions. We find that the band gap shrinks to zero continuously, and subsequently the density of states N(0) between the bands grows continuously, leading to a continuous metal-insulator transition. For finite doping there is transfer of spectral weight between the Hubbard bands, and a qualitative change in the nature of the quasiparticle band dispersion, with an effective doping-induced hopping strength and bandwidth of order xt.
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we solve the cellular dynamical mean-field equations for the two-dimensional Hubbard model using a plaquette as the reference quantum impurity model and continuous-time quantum Monte Carlo method as impurity solver. The normal-state phase diagram as a function of interaction strength UUU, temperature TTT, and filling nnn shows that, upon increasing nnn toward the Mott insulator, there is a surface of first-order transition between two metals at nonzero doping. That surface ends at a finite temperature critical line originating at the half-filled Mott critical point. Associated with this transition, there is a maximum in scattering rate as well as thermodynamic signatures. These findings suggest a new scenario for the normal-state phase diagram of the high temperature superconductors. The criticality surmised in these systems can originate not from a T === 0 quantum critical point, nor from the proximity of a long-range ordered phase, but from a low temperature transition between two types of metals at finite doping. The influence of Mott physics therefore extends well beyond half-filling.
We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon–doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon–doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott–Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the fundamental physics of the Mott state, both in the antiferromagnetic insulator and at finite temperatures and dopings.
We describe a new microscopic approach for analyzing interacting electron systems with local moments or, in principle, any local order parameter. We specialize attention to the doped Mott insulator phase of the Hubbard model, where standard weak-coupling perturbation methods fail. A rotationally invariant Stratonovich-Hubbard field is introduced to decouple the static spin components of the interaction at each site. Charge degrees of freedom are then treated by ``slave'' Hartree-Fock in the presence of a spatially varying random spin field. The effective action reduces to a classical Heisenberg model at half filling, insuring that the system has (i) finite-range order at T>0 with an exponentially diverging correlation length and (ii) a one-electron Mott-Hubbard gap in the presence of disorder. Away from half-filling properties are determined by strongly non-Gaussian fluctuations in the amplitude and orientation of the local spin fields. The saddle point equations of the theory at zero temperature reduce to inhomogeneous Hartree-Fock, so that disordering of domain walls at finite temperature is in principle included. We present preliminary small system results for the intermediate and large interaction regimes obtained by Monte Carlo simulation of random spin field configurations.