Titanium nitride films for ultrasensitive microresonator detectors
Henry George LeDuc, B. Bumble, Peter K. Day, Byeong Ho Eom, Jiansong Gao, S. R. Golwala, Benjamin A. Mazin, Sean G. McHugh, Andrew Merrill, David C. Moore, Omid Noroozian, Anthony Turner, Jonas Stasys Zmuidzinas
Titanium nitride (TiNx) films are ideal for use in superconducting microresonator detectors for the following reasons: (a) the critical temperature varies with composition (0<Tc<5 K); (b) the normal-state resistivity is large, ρn∼100 μΩ cm, facilitating efficient photon absorption and providing a large kinetic inductance and detector responsivity; and (c) TiN films are very hard and mechanically robust. Resonators using reactively sputtered TiN films show remarkably low loss (Qi>107) and have noise properties similar to resonators made using other materials, while the quasiparticle lifetimes are reasonably long, 10–200 μs. TiN microresonators should therefore reach sensitivities well below 10−19 W Hz−1/2.
Titanium nitride (TiNx) films are ideal for use in superconducting microresonator detectors for the following reasons: (a) the critical temperature varies with composition (0<Tc<5 K); (b) the normal-state resistivity is large, ρn∼100 μΩ cm, facilitating efficient photon absorption and providing a large kinetic inductance and detector responsivity; and (c) TiN films are very hard and mechanically robust. Resonators using reactively sputtered TiN films show remarkably low loss (Qi>107) and have noise properties similar to resonators made using other materials, while the quasiparticle lifetimes are reasonably long, 10–200 μs. TiN microresonators should therefore reach sensitivities well below 10−19 W Hz−1/2.
If driven sufficiently strongly, superconducting microresonators exhibit nonlinear behavior including response bifurcation. This behavior can arise from a variety of physical mechanisms including heating effects, grain boundaries or weak links, vortex penetration, or through the intrinsic nonlinearity of the kinetic inductance. Although microresonators used for photon detection are usually driven fairly hard in order to optimize their sensitivity, most experiments to date have not explored detector performance beyond the onset of bifurcation. Here, we present measurements of a lumped-element superconducting microresonator designed for use as a far-infrared detector and operated deep into the nonlinear regime. The 1 GHz resonator was fabricated from a 22 nm thick titanium nitride film with a critical temperature of 2 K and a normal-state resistivity of 100 μΩ cm. We measured the response of the device when illuminated with 6.4 pW optical loading using microwave readout powers that ranged from the low-power, linear regime to 18 dB beyond the onset of bifurcation. Over this entire range, the nonlinear behavior is well described by a nonlinear kinetic inductance. The best noise-equivalent power of 2×10−16 W/Hz1/2 at 10 Hz was measured at the highest readout power, and represents a ∼10 fold improvement compared with operating below the onset of bifurcation.
Abstract Low microwave loss and regulatable kinetic inductance are two key characteristics of superconducting films to manufacture high-performance quantum devices. Epitaxial titanium nitride (TiN) thin films have been found to exhibit significant advantages in these two aspects. In this paper, we investigated into the dielectric loss and kinetic inductance of epitaxial TiN films, which were prepared on both silicon and sapphire substrates with different temperatures. Crystal structure, surface morphology, and superconducting properties were characterized systematically. The radio-frequency response of microwave resonators made of TiN films was studied at low temperatures to extract the information of kinetic inductance and quality factor. We obtained the highest internal quality factor up to 1.6 × 10 6 at single photon regime and achieved a regulation of kinetic inductance exceeding 16 times by altering the substrate and the sputtering temperature of the TiN films. This work not only provides an essential foundation for the precise design and preparation of low-loss TiN resonators for superconducting quantum bits, but also demonstrates TiN film as an excellent material platform with both low microwave loss and high kinetic inductance that can be applied in other fields such as microwave kinetic inductance detectors.
We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, TC, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible TC’s are obtained from 0.8 to 2.5 K. These films had high resistivities, >100μΩ cm, and internal quality factors for resonators in the GHz range, on the order of 100 k and higher. Trilayers of both TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a well controlled process for films over a wide thickness range. Detectors were fabricated and shown to have single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and potentially other applications such as nanowire detectors, transition edge sensors, and associated quantum information applications.
We report on the fabrication and characterization of superconducting coplanar waveguide (CPW) resonators based on titanium nitride (TiN) thin films deposited on 200\,mm diameter high-resistivity Si(100) substrates. We systematically investigate how deposition conditions, dry-etch power and in-situ resist strip temperature affect morphology, superconducting properties and dielectric losses. By tuning reactive sputtering conditions, three distinct preferred out-of-plane crystal orientations - (111), (200), and a mix of both are achieved. Our results demonstrate that all films exhibit similar minimal two-level system (TLS) losses, with TiN111 exhibiting the lowest median TLS losses δ~TLS, and greater robustness against reoxidation. The applied structuring process, in contrast, has a far greater influence on the TLS loss than the crystal orientation of the TiN film and, consequently, the intrinsic material properties of the superconducting layer. The lowest TLS losses for all TiN depositions were achieved with a low power etch and low temperature resist strip. An additional buffered oxide etch (BOE) treatment could remove high-loss interfacial oxides at the metal-air (MA) and substrate-air (SA) interface and recover the etch-induced TLS losses. Consequently, TiN resonators exhibiting δ~TLS values as low as 9.67×10−7 were realized. The corresponding median low-power loss, δ~LP, amounts to 11.04×10−7, which translates to an internal quality factor approaching one million. These findings highlight the critical role of process induced oxide formation at the MA and SA interfaces in limiting the performance of TiN resonators and provide a scalable, low-loss process compatible with industry-grade 200\,mm CMOS qubit fabrication workflows.
We report a novel method of growing strongly disordered superconducting titanium nitride (TiN) thin films by reactive electron-beam deposition. The normal state sheet resistance and superconducting critical temperature (Tc) can be tuned by controlling the deposition pressure in the range of 1.1×10−6–3.1×10−5mbar. For 10nm thick films, the sheet resistance (R□) reaches 1361Ω/□ and Tc=0.77K, which translates into an estimate for the sheet inductance as large as L□=2.4nH/□. Benefiting from the directionality of reactive evaporation, we fabricated RF test devices with micrometer-sized dimensions using a resist mask and a lift-off process, which would be difficult with sputtering or atomic layer deposition methods. The spectroscopic measurements result in consistent sheet inductance values in two different device geometries, and the quality factors ranged from Q = 300 to 2200. The loss is possibly due to the presence of titanium oxynitride (TiNxOy) in the morphological composition of our films. The flexibility of the lift-off process suggests applications of reactively evaporated TiN for making supporting structures around quantum circuits, such as readout resonators or compact on-chip filters.
We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature Tc , sheet resistance Rs and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power NEPopt≈2.3×10−15W/Hz , which is promising for passive terahertz imaging applications.