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arXiv:1003.2112 · Applied Physics Letters

Microwave driven arbitrary coupling between trapped charge resonances in a silicon single electron transistor

Morteza Erfani, David G. Hasko, Alessandro Rossi, Wan Sik Cho, Jung-Bum Choi

Published Nov 7, 2011• 3 citations
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Abstract

We report controllable coupling between coherent excitations in a silicon transistor, which is useful for double-qubit gate operation. Coupling interactions may be directed by adjusting the gate voltage in a semiconductor device or by an additional flux in a superconducting device. Here, we demonstrate an alternative approach to coupling by exploiting the nonlinear behavior of the silicon transistor. Microwave spectroscopy on a DC-biased transistor has previously been found to indicate the presence of coherent oscillating electrons. We couple two such resonances by using triple-frequency spectroscopy, where the third frequency corresponds to the frequency difference between the two on-resonance frequencies.

DOI
10.1063/1.3659896

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We report controllable coupling between coherent excitations in a silicon transistor, which is useful for double-qubit gate operation. Coupling interactions may be directed by adjusting the gate voltage in a semiconductor device or by an additional flux in a superconducting device. Here, we demonstrate an alternative approach to coupling by exploiting the nonlinear behavior of the silicon transistor. Microwave spectroscopy on a DC-biased transistor has previously been found to indicate the presence of coherent oscillating electrons. We couple two such resonances by using triple-frequency spectroscopy, where the third frequency corresponds to the frequency difference between the two on-resonance frequencies.
In quantum computation, information is processed by gates that must coherently couple separate qubits. In many systems the qubits are naturally coupled, but such an always-on interaction limits the algorithms that may be implemented. Coupling interactions may also be directed in devices and circuits that are provided with additional control wiring. This can be achieved by adjusting the gate voltage in a semiconductor device or an additional flux in a superconducting device. Such control signals must be applied adiabatically (limiting the speed) and the additional wiring provides pathways for noise, which leads to decoherence. Here we demonstrate an alternative approach to coupling by exploiting the nonlinear behaviour of a degenerately doped silicon transistor. A single transistor can exhibit a large number of individual resonances, which are seen as changes in the source-drain current of a dc-biased device. These resonances may be addressed in frequency space due to their high quality factors. Two widely separated resonances are addressed and coupled in three-frequency spectroscopy by ensuring that the third frequency corresponds to the difference between the two individual resonances. The nonlinearity causes the generation of additional driving signals with appropriate frequency and phase relationships to ensure coupling, resulting in additional spectroscopic features that could be exploited for rapid state manipulation and gate operations.
Hole spin qubits are appealing for quantum information processing, because they can be coherently manipulated with radio-frequency electric fields. The underlying physical mechanism relies on spin-orbit coupling (SOC) in the semiconductor's valence band, and operating a hole spin qubit requires accurate knowledge of SOC-dependent parameters that can vary from one qubit to another. To this end, the authors employ a two-tone-spectroscopy technique that exploits the same tools used for qubit control and readout: microwave gate-voltage excitation and dispersive gate reflectometry. Their approach will facilitate accurate quantum control of hole spin qubits in scaled semiconductor structures.
Trapped charges at oxide interfaces in field effect transistors are well known sources of noise and generally degrade the device performance. At low temperatures, operating in the sub-threshold regime, conduction electrons can be confined to percolation pathways [1]. The scattering potential produced by trapped charge can then have a dramatic effect on the conductance, normally observed as random telegraph noise [2]. Here we show that it is possible to coherently excite the trapped electrons with microwave fields, which induce polarization fields that interact with the percolating electrons, measured as high-quality resonances (Q ~ 104- 105) in the transistor current. Implementing single-shot measurements gives the possibility to study the dynamics of the trapped electrons, and using a standard Ramsey protocol, coherent control is achieved. Given the long coherence times observed (T2~ 10 μs) and since each resonance can be addressed independently in frequency space, the possibility to use such systems as quantum memories or quantum bits is discussed.
Abstract Semiconductor qubits rely on the control of charge and spin degrees of freedom of electrons or holes confined in quantum dots. They constitute a promising approach to quantum information processing, complementary to superconducting qubits. Here, we demonstrate coherent coupling between a superconducting transmon qubit and a semiconductor double quantum dot (DQD) charge qubit mediated by virtual microwave photon excitations in a tunable high-impedance SQUID array resonator acting as a quantum bus. The transmon-charge qubit coherent coupling rate (~21 MHz) exceeds the linewidth of both the transmon (~0.8 MHz) and the DQD charge qubit (~2.7 MHz). By tuning the qubits into resonance for a controlled amount of time, we observe coherent oscillations between the constituents of this hybrid quantum system. These results enable a new class of experiments exploring the use of two-qubit interactions mediated by microwave photons to create entangled states between semiconductor and superconducting qubits.
Semiconductor qubits rely on the control of charge and spin degrees of freedom of electrons or holes confined in quantum dots. They constitute a promising approach to quantum information processing, complementary to superconducting qubits. Here, we demonstrate coherent coupling between a superconducting transmon qubit and a semiconductor double quantum dot (DQD) charge qubit mediated by virtual microwave photon excitations in a tunable high-impedance SQUID array resonator acting as a quantum bus. The transmon-charge qubit coherent coupling rate (~21 MHz) exceeds the linewidth of both the transmon (~0.8 MHz) and the DQD charge qubit (~2.7 MHz). By tuning the qubits into resonance for a controlled amount of time, we observe coherent oscillations between the constituents of this hybrid quantum system. These results enable a new class of experiments exploring the use of two-qubit interactions mediated by microwave photons to create entangled states between semiconductor and superconducting qubits.
Voltage-tunable superconductor-semiconductor devices offer a unique platform to realize dynamic tunability in superconducting quantum circuits. By galvanically connecting a gated InAs\mathrm{In}\mathrm{As}InAs-Al\mathrm{Al}Al Josephson junction to a coplanar waveguide resonator, we demonstrate the use of a superconducting element with wideband gate tunability. We show that the resonant frequency is controlled via a gate-tunable Josephson inductance and that the nonlinearity of the InAs\mathrm{In}\mathrm{As}InAs-Al\mathrm{Al}Al junction is nondissipative as is the case with conventional AlOx-Al{\mathrm{Al}\mathrm{O}}_{\mathrm{x}}\text{-Al}AlOx​-Al junctions. As the gate voltage is decreased, the inductive participation of the junction increases up to $44\mathrm{%}$, resulting in the resonant frequency being tuned by over 2GHz2\phantom{\rule{0.2em}{0ex}}\mathrm{GHz}2GHz. Utilizing the wide tunability of the device, we demonstrate that two resonant modes can be adjusted such that they strongly hybridize, exhibiting an avoided-level crossing with a coupling strength of 51MHz51\phantom{\rule{0.2em}{0ex}}\mathrm{MHz}51MHz. Implementing such voltage-tunable resonators is the first step toward realizing wafer-scale continuous voltage control in superconducting circuits for qubit-qubit coupling, quantum limited amplifiers, and quantum memory platforms.