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arXiv:2210.02491 · Physical Review Applied

Superconducting Resonators with Voltage-Controlled Frequency and Nonlinearity

William M. Strickland, Bassel Heiba Elfeky, Joseph O’Connell Yuan, William F. Schiela, Peng Yu, Dylan Langone, Maxim Vavilov, Vladimir Manucharyan, Javad Shabani

Published Mar 7, 2023• 30 citations
arXivHTMLPDF

Abstract

Voltage-tunable superconductor-semiconductor devices offer a unique platform to realize dynamic tunability in superconducting quantum circuits. By galvanically connecting a gated $\mathrm{In}\mathrm{As}$-$\mathrm{Al}$ Josephson junction to a coplanar waveguide resonator, we demonstrate the use of a superconducting element with wideband gate tunability. We show that the resonant frequency is controlled via a gate-tunable Josephson inductance and that the nonlinearity of the $\mathrm{In}\mathrm{As}$-$\mathrm{Al}$ junction is nondissipative as is the case with conventional ${\mathrm{Al}\mathrm{O}}_{\mathrm{x}}\text{-Al}$ junctions. As the gate voltage is decreased, the inductive participation of the junction increases up to $44\mathrm{%}$, resulting in the resonant frequency being tuned by over $2\phantom{\rule{0.2em}{0ex}}\mathrm{GHz}$. Utilizing the wide tunability of the device, we demonstrate that two resonant modes can be adjusted such that they strongly hybridize, exhibiting an avoided-level crossing with a coupling strength of $51\phantom{\rule{0.2em}{0ex}}\mathrm{MHz}$. Implementing such voltage-tunable resonators is the first step toward realizing wafer-scale continuous voltage control in superconducting circuits for qubit-qubit coupling, quantum limited amplifiers, and quantum memory platforms.

DOI
10.1103/physrevapplied.19.034021

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Voltage-tunable superconductor-semiconductor devices offer a unique platform to realize dynamic tunability in superconducting quantum circuits. By galvanically connecting a gated InAs\mathrm{In}\mathrm{As}InAs-Al\mathrm{Al}Al Josephson junction to a coplanar waveguide resonator, we demonstrate the use of a superconducting element with wideband gate tunability. We show that the resonant frequency is controlled via a gate-tunable Josephson inductance and that the nonlinearity of the InAs\mathrm{In}\mathrm{As}InAs-Al\mathrm{Al}Al junction is nondissipative as is the case with conventional AlOx-Al{\mathrm{Al}\mathrm{O}}_{\mathrm{x}}\text{-Al}AlOx​-Al junctions. As the gate voltage is decreased, the inductive participation of the junction increases up to 44\mathrm{%}, resulting in the resonant frequency being tuned by over 2GHz2\phantom{\rule{0.2em}{0ex}}\mathrm{GHz}2GHz. Utilizing the wide tunability of the device, we demonstrate that two resonant modes can be adjusted such that they strongly hybridize, exhibiting an avoided-level crossing with a coupling strength of 51MHz51\phantom{\rule{0.2em}{0ex}}\mathrm{MHz}51MHz. Implementing such voltage-tunable resonators is the first step toward realizing wafer-scale continuous voltage control in superconducting circuits for qubit-qubit coupling, quantum limited amplifiers, and quantum memory platforms.
Superconductor-semiconductor hybrid materials have been extensively used for experiments on electrically tunable quantum devices. Notably, Josephson junctions utilizing nanowire weak links have enabled a number of new gate-tunable qubits, including gatemons, Andreev level qubits and spin qubits. Conversely, superconducting parametric amplifiers based on Josephson junctions have not yet been implemented using nanowires, even though such nearly quantum limited amplifiers are key elements in experiments on quantum circuits. Here we present Josephson parametric amplifiers based on arrays of parallel InAs nanowires that feature a large critical current as required for linear amplification. The resonance frequency of the devices is gate-tunable by almost 1 GHz, with a gain exceeding 20 dB in multiple frequencies and noise approaching the quantum-limit. This new platform enables on-chip integration of gate-tunable qubits with quantum limited amplifiers using the same hybrid materials and on any substrate.
In computing architectures, one important factor is the tradeoff between the need to couple bits of information (quantum or classical) to each other and to an external drive and the need to isolate them well enough in order to protect the information for an extended period of time. In the case of superconducting quantum circuits, one approach is to utilize fixed frequency qubits coupled to coplanar waveguide (CPW) resonators such that the system can be kept in a configuration that is relatively insensitive to noise. Here, we propose a scalable voltage-tunable quantum memory design concept compatible with superconducting qubit platforms. Our design builds on the recent progress in fabrication of Josephson field effect transistors (JJ-FETs) which, use indium arsenide (InAs) quantum wells. The JJ-FET is incorporated into a tunable coupler between a transmission line and a high-quality resonator in order to control the overall inductance of the coupler. A full isolation of the high-quality resonator can be achieved by turning off the JJ-FET. This could allow for long coherence times and protection of the quantum information inside the storage cavity. The proposed design would facilitate the implementation of random access memory for storage of quantum information in between computational gate operations.
Hybrid circuit QED involves the study of coherent quantum physics in solid-state systems via their interactions with superconducting microwave circuits. Here we present a crucial step in the implementation of a hybrid superconducting qubit that employs a carbon nanotube as a Josephson junction. We realize the junction by contacting a carbon nanotube with a superconducting Pd/Al bilayer, and implement voltage tunability of the quantum circuit's frequency using a local electrostatic gate. We demonstrate a strong dispersive coupling to a coplanar waveguide resonator by investigating the gate-tunable resonator frequency. We extract qubit parameters from spectroscopy using dispersive readout and find qubit relaxation and coherence times in the range of 101010--200ns200\phantom{\rule{0.2em}{0ex}}\mathrm{ns}200ns.
Qubits on solid state devices could potentially provide the rapid control necessary for developing scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits substantially over the past two decades. Here, we show by improving interface between InAs as a semiconductor and Al as a superconductor, one can reliably fabricate voltage-controlled Josephson junction field effect transistor (JJ-FET) that can be used as tunable qubits, resonators, and coupler switches. We find that bandgap engineering is crucial in realizing a two-dimensional electron gas near the surface. In addition, we show how the coupling between the semiconductor layer and the superconducting contacts can affect qubit properties. We present the anharmonicity and coupling strengths from one and two-photon absorption in a quantum two level system fabricated with a JJ-FET.
Superconducting qubit based on superconducting circuits consist of a superconducting capacitor and a Josephson junction with the transmon geometry is extensively used in advanced quantum processors, pursuing scalable quantum computing. The tuning of the qubit frequency of the transmon relies on magnetic flux dependent interference between the supercurrents of two superconductor-insulator superconductor(S-I-S) Josephson junctions in a superconducting loop. Josephson junction based on superconductor-semiconductor-superconductor (S-Sm-S) materialsopens up a possibility to the gate-tunable transmon, referred to as the "gatemon", in which the qubit frequency can be tuned by electrostatic mean. Recent realizations of gatemons on III-V material platforms show impressive development on the alternative to the transmon, yet still leave a big question on the scalability. The silicon-germanium (SiGe) heterostructure is one of the potential platforms to host hybrid devices due to its high hole mobility and the low Schottky barrier at the Ge-metal interface. Additionally, the compatibility with the silicon-based semiconductor industry is a capable advantage for the scaling-up qubit platform.In this thesis, we develop gatemons based on the Al-Ge-Al Josephson junction in the SiGe heterostructure. Firstly, the robust fabrication recipe, found on a top down approach, for Josephson Field Effect Transistors (JoFETs) is established. We perform measurements exhaustively on the JoFETs to study their properties as a function of the gate voltage, temperature, and magnetic field. The devices show gate-tunability of the critical current (IC) and the normal state resistance (RN). The devices are estimated to have a high-transparency superconductor/semiconductor interface, as demonstrated by the high ICRN product on the SiGe heterostructure. In the finite-voltage regime, the features corresponded to multiple Andreev reflections (MARs) are observed. Then, we fabricate and characterize niobium nitride (NbN) superconducting resonators on SiGe heterostructure. We measure the resonators in the transmission mode and extract the resonant frequency (fr), internal quality factor (Qi), and coupling quality factor (Qc) from the transmission coefficient (S21). Following that, we develop the fabrication process to integrate Al-Ge-Al junctions shunted with capacitors, or, in other words,gatemon, into the resonator scheme and perform the fabrication according to the design. We demonstrate the anticrossing feature in one of the fabricated gatemons. The resonant frequency of the gatemon is mapped using the two-tone spectroscopy technique and is found to be gate-tunable. The qubit has large spectral linewidth, implying a low coherence time. Additionally, we conduct the current-phase relationship (CPR) measurement on the junctions in the Superconducting QUantum Interference Device (SQUID) geometry. We can demonstrate that the junctions pose non-sinusoidal CPR. Further, the integer and half-integer Shapiro steps are observed in the current-voltage characteristic curves of irradiated junctions. This indicates that our junctions have the cos 2φ element, which can open up another possibility toward protected qubits.
Superconducting qubit based on superconducting circuits consist of a superconducting capacitor and a Josephson junction with the transmon geometry is extensively used in advanced quantum processors, pursuing scalable quantum computing. The tuning of the qubit frequency of the transmon relies on magnetic flux-dependent interference between the supercurrents of two superconductor-insulator-superconductor (S-I-S) Josephson junctions in a superconducting loop. Josephson junction based on superconductor-semiconductor-superconductor (S-Sm-S) materials opens up a possibility to the gate-tunable transmon, referred to as the "gatemon", in which the qubit frequency can be tuned by electrostatic mean. Recent realizations of gatemons on III-V material platforms show impressive development on the alternative to the transmon, yet still leave a big question on the scalability. The silicon-germanium (SiGe) heterostructure is one of the potential platforms to host hybrid devices due to its high hole mobility and the low Schottky barrier at the Ge-metal interface. Additionally, the compatibility with the silicon-based semiconductor industry is a capable advantage for the scaling-up qubit platform.In this thesis, we develop gatemons based on the Al-Ge-Al Josephson junction in the SiGe heterostructure. Firstly, the robust fabrication recipe, found on a top-down approach, for Josephson Field Effect Transistors (JoFETs) is established. We perform measurements exhaustively on the JoFETs to study their properties as a function of the gate voltage, temperature, and magnetic field. The devices show gate-tunability of the critical current and the normal state resistance . The devices are estimated to have a high-transparency superconductor-semiconductor interface, as demonstrated by the high product on the SiGe heterostructure. In the finite-voltage regime, the features corresponded to multiple Andreev reflections (MARs) are observed. Then, we fabricate and characterize niobium nitride (NbN) superconducting resonators on SiGe heterostructure. We measure the resonators in the transmission mode and extract the resonant frequency , internal quality factor, and coupling quality factor from the transmission coefficient. Following that, we develop the fabrication process to integrate Al-Ge-Al junctions shunted with capacitors, or, in other words, gatemon, into the resonator scheme and perform the fabrication according to the design. We demonstrate the anticrossing feature in one of the fabricated gatemons. The resonant frequency of the gatemon is mapped using the two-tone spectroscopy technique and is found to be gate-tunable. The qubit has large spectral linewidth, implying a low coherence time. Additionally, we conduct the current-phase relationship (CPR) measurement on the junctions in the Superconducting QUantum Interference Device (SQUID) geometry. We can demonstrate that the junctions pose non-sinusoidal CPR. Further, the integer and half-integer Shapiro steps are observed in the current-voltage characteristic curves of irradiated junctions. This indicates that our junctions have the element, which can open up another possibility toward protected qubits.