A dense array of ions in microfabricated traps represents one possible way to scale up ion trap quantum computing. The ability to address individual ions is an important component of such a scheme. We demonstrate individual addressing of trapped ions in a microfabricated surface-electrode trap using a magnetic field gradient generated on-chip. A frequency splitting of 310(2) kHz for two ions separated by 5 μm is achieved. Selective single qubit operations are performed on one of two trapped ions with an average of 2.2(±1.0%) crosstalk. Coherence time is reduced by the magnetic field gradient, but the spin-echo technique effectively restores the coherence time.
A dense array of ions in microfabricated traps represents one possible way to scale up ion trap quantum computing. The ability to address individual ions is an important component of such a scheme. We demonstrate individual addressing of trapped ions in a microfabricated surface-electrode trap using a magnetic field gradient generated on-chip. A frequency splitting of 310(2) kHz for two ions separated by 5 μm is achieved. Selective single qubit operations are performed on one of two trapped ions with an average of 2.2(±1.0%) crosstalk. Coherence time is reduced by the magnetic field gradient, but the spin-echo technique effectively restores the coherence time.
Individual-qubit addressing is a prerequisite for many instances of quantum information processing. We demonstrate this capability on trapped-ion qubits with microwave near fields delivered by electrode structures integrated into a microfabricated surface-electrode trap. We describe four approaches that may be used in quantum information experiments with hyperfine levels as qubits. We implement individual control on two 25Mg+ ions separated by 4.3 μm and find spin-flip crosstalk errors on the order of 10(-3).
The major challenges in trapped-ion quantum computation are to scale up few-ion experiments to many qubits and to improve control techniques so that quantum logic gates can be carried out with higher fidelities. This thesis reports experimental progress in both of these areas. In the early part of the thesis we describe the fabrication of a surface-electrode ion trap, the development of the apparatus and techniques required to operate it and the successful trapping of 40Ca+ ions. Notably we developed methods to control the orientation of the principal axes and to minimise ion micromotion. We propose a repumping scheme that simplifies heating rate measurements for ions with low-lying D levels, and use it to characterise the electric field noise in the trap. Surface-electrode traps are important because they offer a route to dense integration of electronic and optical control elements using existing microfabrication technology. We explore this scaling route by testing a series of three traps that were microfabricated at Sandia National Laboratories. Investigations of micromotion and charging of the surface by laser beams were carried out and improvements to future traps are suggested. Using one of these traps we also investigated anomalous electrical noise from the electrode surfaces and discovered that it can be reduced by cleaning with a pulsed laser. A factor of two decrease was observed; this represents the first in situ removal of this noise source, an important step towards higher gate fidelities. In the second half of the thesis we describe the design and construction of an experiment for the purpose of replacing laser-driven multi-qubit quantum logic gates with microwave-driven ones. We investigate magnetic-field-independent hyperfine qubits in 40Ca+ as suitable qubits for this scheme. We make a design study of how best to integrate an ion trap with the microwave conductors required to implement the gate and propose a novel integrated resonant structure. The trap was fabricated and ions were successfully loaded. Single-qubit experiments show that the microwave fields above the trap are in excellent agreement with software simulations. There are good prospects for demonstrating a multi-qubit gate in the near future. We conclude by discussing the possibilities for larger-scale quantum computation by combining microfabricated traps and microwave control.
This thesis reports high-fidelity near-field spatial microwave addressing of long-lived 43Ca+ "atomic clock" qubits performed in a two-zone single-layer surface-electrode ion trap. Addressing is implemented by using two of the trap's integrated microwave electrodes, one in each zone, to drive single-qubit rotations in the zone we choose to address whilst interferometrically cancelling the microwave field at the neighbour (non-addressed) zone. Using this field-nulling scheme, we measure a Rabi frequency ratio between addressed and non-addressed zones of up to 1400, from which we calculate an addressing error (or a spin-flip probability on the qubit transition) of 1e-6. Off-resonant excitation out of the qubit state is a more significant source of error in this experiment, but we also demonstrate polarisation control of the microwave field at an error level of 2e-5, which, if combined with individual-ion addressing, would be sufficient to suppress off-resonant excitation errors to the 1e-9 level. Further, this thesis presents preliminary results obtained with a micron-scale coupled-microstrip differential antenna probe that can be scanned over an ion-trap chip to map microwave magnetic near fields. The probe is designed to enable the measurement of fields at tens of microns above electrode surfaces and to act as an effective characterisation tool, speeding up design-fabrication-characterisation cycles in the production of new prototype microwave ion-trap chips. Finally, a new multi-layer design for an ion-trap chip which displays, in simulations, a 100-fold improvement in addressing performance, is presented. The chip electrode structure is designed to use the cancelling effect of microwave return currents to produce Rabi frequency ratios of order 1000 between trap zones using a single microwave electrode (i.e. without the need for nulling fields). If realised, this chip could be used to drive individually addressed single-qubit operations on arrays of memory qubits in parallel and with high fidelity.
The trapped atomic ion qubits feature desirable properties for use in a quantum computer such as long coherence times, high qubit readout fidelity, and universal logic gates. While these essential properties have been demonstrated, the ability to scale a trapped ion quantum system has not yet been shown. The challenge of scaling the system calls for methods to realize high-fidelity logic gates in scalable trap structures. Surface electrode ion traps, that are microfabricated from a silicon substrate, provide a scalable platform for trapping ion qubits only if high-fidelity operations are achievable in these structures. Here, we present a system for trapping and manipulating ions in a scalable surface trap. Trapping times exceeding 20 minutes without laser cooling, and heating rates as low as 0.8 quanta/ms indicate stable trapping conditions in these microtraps. Coherence times of more than one second verify adequate qubit and control field stability. We demonstrate low-error single-qubit gates performed using stimulated Raman transitions driven by lasers that are tightly focused on the ion qubit. Digital feedback loops are implemented to control the driving field's amplitude and frequency. Gate errors are measured using a randomized benchmarking protocol for single qubit gates, where residual amplitude error in the control beam is compensated using various pulse sequence techniques. Using pulse compensation, we demonstrate single qubit gates with an average error per randomized Clifford group gate of 3.6(3)times10−4, which is below the fault-tolerant threshold for some error-correction schemes.
While quantum information processing offers a tantalizing possibility of a significant speedup in execution of certain algorithms, as well as enabling previously unmanageable simulations of large quantum systems, it remains extremely difficult to realize experimentally. Recently, fundamental building blocks of a quantum computer, including one and two qubit gates, teleportation and error correction, were demonstrated using trapped atomic ions. Scaling to a larger number of qubits requires miniaturization of the ion traps, currently limited by the sharply increasing motional state decoherence at sub-100 μm ion-electrode distances. This thesis explores the source and suppression of this decoherence at cryogenic temperatures, and demonstrates fundamental logic gates in a surface electrode ion trap.
Construction of the apparatus requires the development of a number of experimental techniques. Design, numerical simulation and implementation of a surface electrode ion trap is presented. Cryogenic cooling of the trap to near 4 K is accomplished by contact with a bath cryostat. Ions are loaded by ablation or photoionization, both of which are characterized in terms of generated stray fields and heat load.
The bulk of new experimental results deals with measurements of electric field noise at the ion's position. Upon cooling to 6 K, the measured rates are suppressed by up to 7 orders of magnitude, more than two orders of magnitude below previously published data for similarly sized traps operated at room temperature. The observed noise depends strongly on fabrication process, which suggests further improvements are possible. The measured dependence of the electric field noise on temperature is inconsistent with published models, and can be explained using a continuous spectrum of activated fluctuators.
The fabricated surface electrode traps are used to demonstrate coherent operations and the classical control required for trapped ion quantum computation. The necessary spectral properties of coherent light sources are achieved with a novel design using optical feedback to a triangular, medium finesse, cavity, followed by electronic feedback to an ultra-high finesse reference cavity. Single and two qubit operations on a single ion are demonstrated with classical fidelity in excess of 95%. Magnetic field gradient coils built into the trap allow for individual addressing of ions, a prerequisite to scaling to multiple qubits. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.)
Current classical computing methods are unable to simulate quantum many-body interactions efficiently.Analog quantum simulators with even small numbers of quantum degrees of freedom are expected to enable the investigation of systems not fully accessible in traditional computing such as condensed-matter systems, quantum chemistry, and material science.Two-dimensional lattices of trapped ions are a good candidate to realize an analog quantum simulator for their addressability, individual control and individual detection.Here, we report on multiple unique lattice surface ion trap designs, microfabricated at Sandia National Laboratories, capable of trapping and interacting up to 4 ions.Ions are held in close proximity in individual all radio-frequency potential minima and interact via their Coulomb repulsion.The Coulomb coupling between ions allows for simulation of spin-spin interactions 1-6 .Control electrodes of the trap can be used to adjust principal axes of the ion's motion and thus enable individual control over the interaction between ions.The lattice trap array architecture tested in this work can be scaled to larger two-dimensional lattices of trapped ions.