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arXiv:0806.2175

Quantum Lithography Based on Multiple Light Exposures for Arbitrary Sub-Diffraction-Limit Pattern Generation

Hee Su Park, Sun Kyung Lee

Published Jun 13, 2008• 0 citations
arXivHTMLPDF

Abstract

We propose a super-resolution quantum lithography scheme based on coherent population trapping in lambda-type atoms coupled to temporally-cascaded standing-wave driving fields. By realizing effective multiplication of optical intensity profiles on an atomic state density distribution, the scheme enables an arbitrarily high degree of resolution enhancement without modifying the atomic level structure of the photographic medium or the light source configuration. It is also shown that the visibility of the super-resolution patterns is preserved under a significant atomic state decoherence rate.

DOI
10.48550/arxiv.0806.2175

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We propose a super-resolution quantum lithography scheme based on coherent population trapping in lambda-type atoms coupled to temporally-cascaded standing-wave driving fields. By realizing effective multiplication of optical intensity profiles on an atomic state density distribution, the scheme enables an arbitrarily high degree of resolution enhancement without modifying the atomic level structure of the photographic medium or the light source configuration. It is also shown that the visibility of the super-resolution patterns is preserved under a significant atomic state decoherence rate.
We propose a novel approach to optical generation of superresolution atomic state density distribution based on interaction between Lambda- type atoms and temporally-cascaded driving fields. The scheme effectively inscribes multiplication of optical intensity profiles on atomic state density distribution, which can produce arbitrary patterns beyond the diffraction limit. The degree of resolution enhancement can be increased, not depending on the intrinsic nonlinearity of the photographic medium or the number of simultaneously interacting fields unlike the previous schemes. Procedures for drawing arbitrary two-dimensional patterns and effects of atomic state decoherence are described.
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Abstract We theoretically propose a scheme that utilizes the excited state of a Λ-type three-level atom system for atom lithography. A standing-wave coupling field and a probe field provide localized probability distribution of the excited atoms. Unlike the previous studies in atom localization, we focus on splitting the single-peak structure localized on the node of the standing-wave field to a double-peak structure. The shift distance of double-peak related to the parameters of external laser fields is investigated. The period of lithography pattern could reach λ/4, while the resolution of lithography is promising to be smaller than 0.02λ by adjusting system parameters. This scheme can be extended to form a two-dimensional pattern for lithography.
We present a coherent population trapping based scheme to attain sub-nanoscale resolution for atom localization, microscopy and lithography. Our method uses three-level atoms coupled to amplitude modulated probe field and spatially dependent drive field. The modulation of the probe field allows us to tap into the steep dispersion normally associated with electromagnetically induced transparency and offers an avenue to attain sub-nanometer resolution using just optical fields. We illustrate application of the techniques to the area of microscopy and lithography and show how multilevel schemes offer the possibility of improving resolution further.
Abbe’s diffraction limit restricts the resolution of an optical imaging and lithography system. A coherent Rabi oscillation is shown to be able to overcome the diffraction limit in both optical and atom lithography. In previous studies, semiclassical theory is applied, where the driving field is treated as a classical light, and quantum fluctuation is neglected. Here, we show that the quantum fluctuation may reduce the visibility of the superresolution pattern. However, by squeezing the photon number fluctuation, we are able to significantly increase its visibility.
Based on our previous scheme [Hemmer et al., Phys. Rev. Lett. 96, 163603 (2006)] we show the procedures to obtain any one- or two-dimensional pattern by multiple exposures. A key modification to the resonance condition is made to achieve subwavelength pattern resolution. The level separation of the substrate does not pose an upper limit to the frequency summation. So the fundamental frequency can be high and the number of Fourier terms can be large, making our scheme very suitable for subwavelength arbitrary patterns.