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arXiv:0801.3933 · Europhysics Letters (EPL)

Voltage-controlled Berry phases in two vertically coupled InGaAs/GaAs quantum dots

Huan Wang, Ka‐Di Zhu

Published Jun 1, 2008• 8 citations
arXivHTMLPDF

Abstract

The voltage-controlled Berry phases in two vertically coupled InGaAs/GaAs quantum dots are investigated theoretically. It is found that Berry phases can be changed dramatically from 0 to 2π (or 2π to 0) only by simply applying an external voltage. Under realistic conditions, as the tunneling is varied from 0.8 eV to 0.9 eV via a bias voltage, the Berry phases are altered obviously, and this can be detected in an interference experiment. The scheme is expected to be useful in constructing quantum computation based on geometric phases in an asymmetrical double quantum dot controlled by voltage.

DOI
10.1209/0295-5075/82/60006

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The voltage-controlled Berry phases in two vertically coupled InGaAs/GaAs quantum dots are investigated theoretically. It is found that Berry phases can be changed dramatically from 0 to 2π (or 2π to 0) only by simply applying an external voltage. Under realistic conditions, as the tunneling is varied from 0.8 eV to 0.9 eV via a bias voltage, the Berry phases are altered obviously, and this can be detected in an interference experiment. The scheme is expected to be useful in constructing quantum computation based on geometric phases in an asymmetrical double quantum dot controlled by voltage.
Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.
PACS. 73.23.-b – Electronic transport in mesoscopic systems. Abstract. – We study entanglement of charge qubits in a vertical tunnel-coupled double quantum dot containing two interacting electrons. Exact diagonalization is used to compute the negativity characterizing entanglement. We find that entanglement can be efficiently generated and controlled by sidegate voltages, and describe how it can be detected. For large enough tunnel coupling, the negativity shows a pronounced maximum at an intermediate interaction strength within the Wigner molecule regime. Semiconductor few-electron quantum dots (QDs) continue to attract a lot of interest, as it has now become possible to experimentally control both the electronic spin and charge in a condensed-phase environment in an unprecedented manner. In particular, double quantum dots (DQDs) can be fabricated in a well-controlled fashion in high-quality semiconductor devices, and are currently under intense study [1–9]. Vertical or lateral tunnel-coupled DQDs are among the most promising candidates for realizing spin or charge qubits in a quantum information processor [10–12]. Their main advantages are scalability, good control of physical properties via tunable external (sidegate-) voltages or magnetic fields, and spatial separation
The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100Gbits∕s optical network, numerical calculation infers group velocity as low as 300m∕s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.
The electronic states of InAs/GaAs quantum dot has investigated for vertically-aligned double conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage, wetting layer thickness and inter-dot spacer. Tunneling-induced transparency (TIT) in vertically coupled InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The inter-dot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in vertically coupled InAs/GaAs quantum dots controlled by electric fields.