The detrimental effect of spontaneous emission on the performance of control schemes designed to achieve population inversion between the ground state and a highly excited atomic state are studied using computer simulations.
Three-level systems in which the middle level has opposite parity from the remaining levels can develop optical gain on the excited-state transition when a two-photon resonant field couples the ground state with the uppermost state. Both population gain, which leads to amplified spontaneous emission, and hyper-Raman gain, which leads to stimulated hyper-Raman scattering, occur.1 Evidence for both types of process appears in two-photon-excited bidirectional emission in atomic xenon.2 This paper presents and compares threshold scaling characteristics, temporal behavior, directional energy distribution patterns, and tuning behavior as evidence for the gain mechanism in xenon. Near threshold, clear evidence for population inversion gain exists. Above threshold, axial emission energy exceeds off-axial (spontaneous emission) energy by a factor which increases with excitation energy. This excess of energy indicates the presence of hyper-Raman and/or four-wave mixing gain.
This work investigates the generation of amplified spontaneous emission (ASE) without population inversion in the 4P/sub 3/2/-4S/sub 1/2/ transition of the potassium atom under two-photon excitation of the atom from the 4S/sub 1/2/ to the 6S/sub 1/2/ state. The calculations show that the radiation observed in the 4P/sub 3/2/-4S/sub 1/2/ transition is generated without population inversion for a broad range of the parameters used. It seems that a V-type scheme due to the 5P/sub 3/2/-4S/sub 1/2/ emission and a cascade scheme due to the 6S/sub 1/2/-4P/sub 3/2/ emission are both important in the generation of the radiation in the 4P/sub 3/2/-4S/sub 1/2/ transition. Both schemes are examined and compared with the experimental results in order to assess their impact in the generation of ASE without population inversion.