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arXiv:quant-ph/0007114

Raman Excited Spin Coherences in N-V Diamond

Philip Hemmer, Alexey V. Turukhin, M. S. Shahriar, J. A. Musser

Published Jul 28, 2000• 0 citations
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Abstract

Raman excited spin coherences were experimentally observed in N-V diamond color centers via nondegenerate four-wave mixing (NDFWM) and electromagnetically induced transparency (EIT). The maximal absorption suppression was found to be 17%, which corresponds to 70% of what is possible given the random geometric orientation of the N-V center in diamond. In the context of quantum computing in solids, this level of transparency represents the efficient preparation of quantum bits (qubits), as well as ability to perform arbitrary single qubit rotations.

DOI
10.48550/arxiv.quant-ph/0007114

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Raman excited spin coherences were experimentally observed in nitrogen-vacancy (N-V) diamond color centers via nondegenerate four-wave mixing (NDFWM) and electromagnetically induced transparency (EIT). The maximal EIT-induced absorption suppression was found to be 17%, which corresponds to 70% of what is possible given the four possible geometric orientations of the N-V center in diamond. The properties of these coherences are discussed in the context of potential applications to solid-state quantum computing and high-temperature spectral hole burning memories.

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arXiv:1303.6996•Physical Review Letters•May 22, 2013•122 citations
Raman excited spin coherences were experimentally observed in N-V diamond color centers via nondegenerate four-wave mixing (NDFWM) and electromagnetically induced transparency (EIT). The maximal absorption suppression was found to be 17%, which corresponds to 70% of what is possible given the random geometric orientation of the N-V center in diamond. In the context of quantum computing in solids, this level of transparency represents the efficient preparation of quantum bits (qubits), as well as ability to perform arbitrary single qubit rotations.
Raman excited spin coherences were experimentally observed in nitrogen-vacancy (N-V) diamond color centers via nondegenerate four-wave mixing (NDFWM) and electromagnetically induced transparency (EIT). The maximal EIT-induced absorption suppression was found to be 17%, which corresponds to 70% of what is possible given the four possible geometric orientations of the N-V center in diamond. The properties of these coherences are discussed in the context of potential applications to solid-state quantum computing and high-temperature spectral hole burning memories.
Raman-excited spin coherences were experimentally observed in nitrogen-vacancy (N-V) diamond color centers by means of nondegenerate four-wave mixing and electromagnetically induced transparency. The maximal absorption suppression was found to be 17%, which corresponds to 70% of what is possible given the random geometric orientation of the N-V center in diamond. In the context of quantum computing in solids, this level of transparency represents efficient preparation of quantum bits, as well as the ability to perform arbitrary single-quantum-bit rotations.
An ever increasing effort has been devoted over the years to develop techniques for manipulating light in optical devices. Electromagnetic induced transparency (EIT) is one of these techniques that has recently led to an astonishing control on light wave propagation in ultracold clouds of alkali atoms. EIT may be employed to realize a photonic band gaps that are controllable through the parameters of an external standing light wave pattern [1]. Such gaseous approaches are not however suitable for on-chip implementation. Early work on control over photonic band-gap comprises, e.g., structures built from the periodic complex susceptibility of quantum well excitons whose optical properties can be dynamically modified through the Stark effect. Other interesting proposals to control photonic band-gaps in semiconductor heterostructures have been brought forward and where control over the band-gap is achieved through EIT in conduction intersubband transitions of a n-doped quantum well. EIT effects have also been observed in a class of solid materials exhibiting defect states, following either familiar or less familiar schemes, and among which presodimium doped Y2SiO5 and diamond containing nitrogen vacancies (N-V) color centers are perhaps the most ubiquitous ones. Color centers in diamond, in particular, have attracted over the past few years a renewed interest for their potential as single-photon sources and are attractive qubit candidates as they behaves a bit like an atom trapped in the diamond lattice. These centers can have extremely long-lived spin coherence because the diamond lattice is composed primarily of 12C, which has zero nuclear spin. In addition, N-V color centers also have interesting optical properties as they exhibit a configuration with two ground state levels connected to a common excited state by optical transitions of moderate strength leading to a lambda-type level configuration required for the observation of EIT [2,3]. This has been exploited to devise a novel photonic band-gap mechanism [4]. We here study the propagation of a very week optical pulse in the band-gap region of N-V diamond crystals. Our calculations show that adopting realistic parameters, as taken from recent experiments on coherent population trapping in N-V color centers, nearly complete reflectivities can be attained in a mm long diamond sample. This occurs when most probe frequency components lie inside the band-gap, yielding instead controllable loss and distortion as the incident probe pulse falls outside the gap. The relevant photonic band-gap may be all optically controlled while its well developed structure is seen to arise from the reduced values of residual absorption in the EIT region. [1] M. Artoni et al., Phys. Rev. Lett. 96, 073905 (2006). [2] C. Wei et al., Phys. Rev. A 60, 2540 (1999). [3] P. Hemmer, et al.,Opt. Lett. 26, 361 (2001). [4] Q.-Y. He, et al., Phys. Rev. B 73, 195124 (2006).
Summary form only given. The use of optical Raman interactions to excite spin coherences in solids has numerous potential applications, ranging from low-power nonlinear optics to high-temperature spectral hole burning memories to solid-state quantum computing. The interest in Raman excitation lies in the fact that the spin coherences can be efficiently excited and manipulated using optical laser fields yet are weakly coupled to the environment and hence have the long coherence lifetimes needed for optical memories and quantum computing. The interest in nitrogen-vacancy (N-V) color centers in diamond is its large optical oscillator strength. For memory, a large oscillator strength is important for high temperature operation. For quantum computing, the high optical transition rate enables the higher gate speed and the larger number of quantum logic operations that can be performed within the spin coherence lifetime.
In this paper, we review our recent experimental studies on electromagnetically induced transparency (EIT) from electron spin coherences in semiconductor quantum wells. Coherent Raman resonances, manifestations of EIT from electron spin coherences at relatively low pump intensities, were demonstrated in both V-type and Λ-type three-level systems via heavy-hole exciton and trion transitions in undoped and doped quantum wells, respectively. Coherent Raman resonances from electron spin coherences via light-hole transitions were also demonstrated in a waveguide geometry that enables a long optical interaction length as well as a large absorption coefficient. Experimental approaches that can avoid or reduce detrimental many-body effects in quantum wells are suggested for the realization of nearly ideal EIT processes.
We use electromagnetically induced transparency (EIT) to probe the narrow electron-spin resonance of nitrogen-vacancy centers in diamond. Working with a multipass diamond chip at temperatures 6--30 K, the zero-phonon absorption line (637 nm) exhibits an optical depth of 6 and inhomogeneous linewidth of $\ensuremath{\sim}30\text{ }\text{ }\mathrm{GHz}$ FWHM. Simultaneous optical excitation at two frequencies separated by the ground-state zero-field splitting (2.88 GHz) reveals EIT resonances with a contrast exceeding 6% and FWHM down to 0.4 MHz. The resonances provide an all-optical probe of external electric and magnetic fields with a projected photon-shot-noise-limited sensitivity of 0.2  V/cm/Hz0.2\text{ }\text{ }\mathrm{V}/\mathrm{cm}/\sqrt{\mathrm{Hz}}0.2  V/cm/Hz​ and 0.1  nT/Hz0.1\text{ }\text{ }\mathrm{nT}/\sqrt{\mathrm{Hz}}0.1  nT/Hz​, respectively. Operation of a prototype diamond-EIT magnetometer measures a noise floor of $\ensuremath{\lesssim}1\text{ }\text{ }\mathrm{nT}/\sqrt{\mathrm{Hz}}$ for frequencies above 10 Hz and Allan deviation of $1.3\ifmmode\pm\else\textpm\fi{}1.1\text{ }\text{ }\mathrm{nT}$ for 100 s intervals. The results demonstrate the potential of diamond-EIT devices for applications ranging from quantum-optical memory to precision measurement and tests of fundamental physics.