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arXiv:quant-ph/0002051 · Physical Review A

Beyond single-photon localization at the edge of a photonic band gap

Georgios M. Nikolopoulos, P. Lambropoulos

Published Apr 14, 2000• 53 citations
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Abstract

We study spontaneous emission in an atomic ladder system, with both transitions coupled near resonantly to the edge of a photonic band gap continuum. The problem is solved through a recently developed technique and leads to the formation of a two-photon $+$ atom bound state with fractional population trapping in both upper states. In the long-time limit, the atom can be found excited in a superposition of the upper states and a direct two-photon process coexists with the stepwise one. The sensitivity of the effect to the particular form of the density of states is also explored.

DOI
10.1103/physreva.61.053812

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We study spontaneous emission in an atomic ladder system, with both transitions coupled near resonantly to the edge of a photonic band gap continuum. The problem is solved through a recently developed technique and leads to the formation of a two-photon +++ atom bound state with fractional population trapping in both upper states. In the long-time limit, the atom can be found excited in a superposition of the upper states and a direct two-photon process coexists with the stepwise one. The sensitivity of the effect to the particular form of the density of states is also explored.
We study spontaneous emission near the edge of a photonic band gap. Instead of a simple exponential decay in the vacuum, spontaneous emission displays an oscillatory behavior. A single photon-atom bound dressed state exhibits a fractional steady-state atomic population on the excited state. For a three-level atom we evaluate the spectral splitting and subnatural linewidth of spontaneous emission. In the presence of N-1 unexcited atoms we show that the collective time scale factor is equal to ${\mathit{N}}^{\mathrm{\ensuremath{\varphi}}}$, where \ensuremath{\varphi}=2/3 for an isotropic band gap and \ensuremath{\varphi}=1 or 2 for anisotropic two-dimensional or three-dimensional band edges, respectively.
We demonstrate the coherent control of spontaneous emission for a three-level atom located within a photonic band gap (PBG) material, with one resonant frequency near the edge of the PBG. Spontaneous emission from the three-level atom can be totally suppressed or strongly enhanced depending on the relative phase between the steady-state control laser coupling the two upper levels and the pump laser pulse used to create an excited state of the atom in the form of a coherent superposition of the two upper levels. Unlike the free-space case, the steady-state inversion of the atomic system is strongly dependent on the externally prescribed initial conditions. This non-zero steady-state population is achieved by virtue of the localization of light in the vicinity of the emitting atom. It is robust to decoherence effects provided that the Rabi frequency of the control laser field exceeds the rate of dephasing interactions. As a result, such a system may be relevant for a single-atom, phase-sensitive optical memory device on the atomic scale. The protected electric dipole within the PBG provides a basis for a qubit to encode information for quantum computations. A detailed literature survey on the nature, fabrication and applications of PBG materials is presented to provide context for this research.
We demonstrate the coherent control of spontaneous emission for a three-level atom located within a photonic band-gap structure with one resonant frequency near the edge of the photonic band gap. Spontaneous emission from the three-level atom can be totally suppressed or strongly enhanced depending on the relative phase between the steady-state control laser coupling the two upper levels and the pump laser pulse used to create an excited state of the atom in the form of a coherent superposition of the two upper levels. Unlike the free-space case, the steady-state inversion of the atomic system is strongly dependent on the externally prescribed initial conditions. This nonzero steady-state population is achieved by virtue of the localization of light in the vicinity of the emitting atom. It is robust to decoherence effects provided that the Rabi frequency of the control laser field-atom interaction exceeds the rate of dephasing interactions. As a result, such a system may be relevant for a single-atom, phase-sensitive, optical memory device on the atomic scale. The protected electric dipole within the photonic band gap provides a basis for a qubit to encode information for quantum computations.
Spontaneous emission from a two-level atom embedded in photonic crystals was investigated in this paper. Due to the photon localization and the quantum interference between the two dressed states, some changes in the radiation field take place: when the excited level moves from the gap to the band, the energy of the localized field is transferred to the propagating field through the diffusion field. If the localized field and the propagating field could coexist, the population evolution in the excited level would exhibit quasi-oscillation behavior. If they could not coexist, there would be no quasi-oscillation. The steady-state trapped atom population in the excited level is changed also. All these characteristics depend not only on the relative position δ of the excited level ω _1 with respect to the band-edge ω _c but also on the photon density of states ρ(ω_k) (or the band-edge smoothing parameter e ) near the band edge.
The novel dynamical and spectral features of (single photon) spontaneous emission from an atomic transition near a photonic band edge are investigated by frustrating these features by spontaneous emission through another atomic transition far from the photonic band edge and deep in the photon continuum, the two atomic transitions forming the two dipole-allowed transitions of a three-level atom in a Λ configuration. Though spontaneous emission through the atomic transition far from the photonic band edge (the “far” transition) is not directly affected by the photonic band gap (PBG), it is indirectly affected by the PBG through its coupling to the atomic transition near the photonic band edge (the “near” transition) via the Λ configuration. As a result of this coupling, spontaneous emission through the “far” transition can be used as a probe to measure the strength of the effects of the PBG on spontaneous emission through the “near” transition. We have shown that the effects of the PBG on spontaneous emission via the “near” transition are strongly affected (and, therefore, can be controlled by) not only by the detuning of the “near” transition from photonic band edge but also by the vacuum decay rate of spontaneous emission through the “far” transition which is coupled to the “near” transition through the Λ configuration. In particular, we have shown that the oscillatory behavior of spontaneous emission near a photonic band edge as well as the Autler-Townes doublet of the spontaneous emission spectrum (due to the splitting of the atomic level near the photonic band edge) are strongly dependent on the decay rate of spontaneous emission through the probe transition which is far from the band edge.
We investigate spontaneous emission from a two-level atom embedded in photonic crystals. Due to the photon localization and the quantum interference between the two dressed states, some changes of the radiation field happen, and the energy is transferred among the excited atom, the localized field, the propagating field and the diffusion field. If there is a localized field, it appears quasi-oscillation behaves of the population evolution in the excited level. If there isn't a localized field, it appears no quasi-oscillation. Moreover, there have some steady-state trapped atom populations in the excited level, and the spontaneous emission spectrum near the forbidden gap edge is different from that in the vacuum. All these characteristics depend not only on the relative position of the excited level from the band-edge but also on the photon density of states (or the band-edge smoothing parameter) near the band edge.