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arXiv:physics/0603157 · Physical Review Letters

Electrodynamic Trapping of Spinless Neutral Atoms with an Atom Chip

T. Kishimoto, Hidekazu Hachisu, J. Fujiki, Keisuke Nagato, Masami Yasuda, Hidetoshi Katori

Published Mar 31, 2006• 23 citations
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Abstract

Three-dimensional electrodynamic trapping of neutral atoms has been demonstrated. By applying time-varying inhomogeneous electric fields with micron-sized electrodes, nearly 10(2) strontium atoms in the 1S0 state have been trapped with a lifetime of 80 ms. In order to design the electrodes, we numerically analyzed the electric field and simulated atomic trajectories in the trap, which showed reasonable agreement with the experiment.

DOI
10.1103/physrevlett.96.123001

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Three-dimensional electrodynamic trapping of neutral atoms has been demonstrated. By applying time-varying inhomogeneous electric fields with micron-sized electrodes, nearly 10(2) strontium atoms in the 1S0 state have been trapped with a lifetime of 80 ms. In order to design the electrodes, we numerically analyzed the electric field and simulated atomic trajectories in the trap, which showed reasonable agreement with the experiment.
We trap neutral ground-state rubidium atoms in a macroscopic trap based on purely electric fields. For this, three electrostatic field configurations are alternated in a periodic manner. The rubidium is precooled in a magneto-optical trap, transferred into a magnetic trap, and then translated into the electric trap. The electric trap consists of six rod-shaped electrodes in cubic arrangement, giving ample optical access. Up to 10;{5} atoms have been trapped with an initial temperature of around 20 microkelvin in the three-phase electric trap. The observations are in good agreement with detailed numerical simulations.
We propose a surface manipulation scheme for "scalar atoms" with time-varying inhomogeneous electric fields. While the weak interaction of scalar atoms with external perturbations minimize environmental decoherences, micron-order electrodes enable the control of the ultracold atoms with the application of only a few volts, i.e., commonly used logic voltage level, which promises good compatibility with existing electronics for future applications. The experimental feasibility of this surface Stark trap is discussed by performing numerical simulations assuming laser-cooled strontium atoms in the 1 S 0 ground state.