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arXiv:cond-mat/9910076 · New Journal of Physics

Microwave spectroscopy on a double quantum dot with an on-chip Josephson oscillator

A W Holleitner, H Qin, F Simmel, B Irmer, R H Blick, J P Kotthaus, Alexey Vladimirovich Ustinov, K Eberl

Published Feb 18, 2000• 11 citations
arXivHTMLPDF

Abstract

We present measurements on microwave spectroscopy on a double quantum dot with an on-chip microwave source. The quantum dots are realized in the two-dimensional electron gas of an AlGaAs/GaAs heterostructure and are weakly coupled in series by a tunnelling barrier forming an `ionic' molecular state. We employ a Josephson oscillator formed by a long Nb/Al-AlO x /Nb junction as a microwave source. We find photon-assisted tunnelling sidebands induced by the Josephson oscillator, and compare the results with those obtained using an externally operated microwave source.

DOI
10.1088/1367-2630/2/1/302

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We present measurements on microwave spectroscopy on a double quantum dot with an on-chip microwave source. The quantum dots are realized in the two-dimensional electron gas of an AlGaAs/GaAs heterostructure and are weakly coupled in series by a tunnelling barrier forming an `ionic' molecular state. We employ a Josephson oscillator formed by a long Nb/Al-AlO x /Nb junction as a microwave source. We find photon-assisted tunnelling sidebands induced by the Josephson oscillator, and compare the results with those obtained using an externally operated microwave source.
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A double quantum dot defines a qubit by a two-level system. The coupling between two qubits induces a double two-level system into a four-level system. We study experimentally the coupling between two capacitive coupled GaAs/AlGaAs double quantum dots while tuning the energy detuning of each double quantum dot simultaneously. Applying microwave photons (at a frequency of 20 GHz) on this system and observing the resonance tunneling with a quantum point contact detector, we obtain an excitation spectrum which is consistent with the numerical simulation result of a coupled two-qubit Hamiltonian. This study demonstrates that a double quantum dot can be exploited as an extraordinary platform for controlled quantum gates.
The present work addresses quantum interaction phenomena of microwave radiation with a single-electron tunneling system. For this study, an integrated circuit is implemented, combining on the same chip a Josephson junction (Al/AlO x /Al) oscillator and a single-electron transistor (SET) with the superconducting island (Al) and normal-conducting leads (AuPd). The transistor is demonstrated to operate as a very sensitive photon detector, sensing down to a few tens of photons per second in the microwave frequency range around f ∼ 100 GHz. On the other hand, the Josephson oscillator, realized as a two-junction SQUID and coupled to the detector via a coplanar transmission line (Al), is shown to provide a tunable source of microwave radiation: controllable variations in power or in frequency were accompanied by significant changes in the detector output, when applying magnetic flux or adjusting the voltage across the SQUID, respectively. It was also shown that the effect of substrate-mediated phonons, generated by our microwave source, on the detector output was negligibly small.
We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies the ground state of either one dot or the other. Applying microwave radiation, we resonantly drive transitions between states and noninvasively measure occupancy changes using proximal quantum point contact charge detectors. The level structure of the interacting two-qubit system is probed by driving it at a fixed microwave frequency while varying the energy detuning of both double dots. We observe additional resonant transitions consistent with a simple coupled two-qubit Hamiltonian model.
We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two entities manifests itself via dispersive and dissipative effects observed as frequency shifts and linewidth broadenings of the photonic mode respectively. A Jaynes-Cummings Hamiltonian master equation calculation is used to model the combined system response and allows for determining both the coherence properties of the double quantum dot and its interdot tunnel coupling with high accuracy. The value and uncertainty of the tunnel coupling extracted from the microwave read-out technique are compared to a standard quantum point contact charge detection analysis. The two techniques are found to be consistent with a superior precision for the microwave experiment when tunneling rates approach the resonator eigenfrequency. Decoherence properties of the double dot are further investigated as a function of the number of electrons inside the dots. They are found to be similar in the single-electron and many-electron regimes suggesting that the density of the confinement energy spectrum plays a minor role in the decoherence rate of the system under investigation.
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate gc/2π= 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.