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arXiv:0907.2409 · Physical Review Letters

Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits

Karl D. Petersson, Charles G. Smith, David V. Anderson, P. Atkinson, G. A. C. Jones, D. A. Ritchie

Published Jul 1, 2009• 43 citations
arXivHTMLPDF

Abstract

We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies the ground state of either one dot or the other. Applying microwave radiation, we resonantly drive transitions between states and noninvasively measure occupancy changes using proximal quantum point contact charge detectors. The level structure of the interacting two-qubit system is probed by driving it at a fixed microwave frequency while varying the energy detuning of both double dots. We observe additional resonant transitions consistent with a simple coupled two-qubit Hamiltonian model.

DOI
10.1103/physrevlett.103.016805

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A double quantum dot defines a qubit by a two-level system. The coupling between two qubits induces a double two-level system into a four-level system. We study experimentally the coupling between two capacitive coupled GaAs/AlGaAs double quantum dots while tuning the energy detuning of each double quantum dot simultaneously. Applying microwave photons (at a frequency of 20 GHz) on this system and observing the resonance tunneling with a quantum point contact detector, we obtain an excitation spectrum which is consistent with the numerical simulation result of a coupled two-qubit Hamiltonian. This study demonstrates that a double quantum dot can be exploited as an extraordinary platform for controlled quantum gates.
Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot charge qubit strongly coupled to a frequency-tunable high-impedance resonator. We drive qubit transitions with synthesized microwave pulses and perform qubit readout through the state-dependent frequency shift imparted by the qubit on the dispersively coupled resonator. We perform Rabi oscillation, Ramsey fringe, energy relaxation, and Hahn-echo measurements and find significantly reduced decoherence rates down to γ_{2}/2π∼3 MHz corresponding to coherence times of up to T_{2}∼50 ns for charge states in gate-defined quantum dot qubits. We realize Rabi π pulses of width down to σ∼0.25 ns.
We explore the microwave radiation emitted from a biased double quantum dot due to the inelastic tunneling of single charges. Radiation is detected over a broad range of detuning configurations between the dot energy levels, with pronounced maxima occurring in resonance with a capacitively coupled transmission line resonator. The power emitted for forward and reverse resonant detuning is found to be in good agreement with a rate equation model, which considers the hybridization of the individual dot charge states.
We fabricate and characterize a hybrid quantum device that consists of five gate-defined double quantum dots (DQDs) and a high-impedance NbTiN transmission resonator. The controllable interactions between DQDs and the resonator are spectroscopically explored by measuring the microwave transmission through the resonator in the detuning parameter space. Utilizing the high tunability of the system parameters and the high cooperativity ( C total > 17.6) interaction between the qubit ensemble and the resonator, we tune the charge-photon coupling and observe the collective microwave response changing from linear to nonlinear. Our results present the maximum number of DQDs coupled to a resonator and manifest a potential platform for scaling up qubits and studying collective quantum effects in semiconductor–superconductor hybrid cavity quantum electrodynamics systems.
We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and noninvasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ∼7 ns at the charge degeneracy point, where the qubit level splitting is first-order insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with numerical simulations and predictions from a 1/f noise model.