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arXiv:cond-mat/9407004

Charge Transfer Excitons and the Metal-Insulator Transition in the High Temperature Superconductors

C Vermeulen, William Barford, Eduardo R. Gagliano

Published Jul 1, 1994• 0 citations
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Abstract

The effects of the nearest neighbour Coulomb repulsion, V, are considered in the one dimensional copper-oxide chain using the modified Lanczos method. Above a critical value of V we find that charge transfer excitons are the lowest lying energy exitations in the insulating phase. Close to the metal-insulator transition and $V=0$ there is good `particle-hole' symmetry, showing that the mapping from a two band model to a one band model is appropriate. The effect of the nearest neighbour repulsion is to create states in the gap and to pin the Fermi level upon hole doping.

DOI
10.48550/arxiv.cond-mat/9407004

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The effects of the nearest neighbour Coulomb repulsion, V, are considered in the one dimensional copper-oxide chain using the modified Lanczos method. Above a critical value of V we find that charge transfer excitons are the lowest lying energy exitations in the insulating phase. Close to the metal-insulator transition and V=0V=0V=0 there is good `particle-hole' symmetry, showing that the mapping from a two band model to a one band model is appropriate. The effect of the nearest neighbour repulsion is to create states in the gap and to pin the Fermi level upon hole doping.
Calculations of the single-particle spectral function for the two-band Hubbard model as a function of doping and nearest-neighbor Coulomb repulsion are performed on finite-size clusters. It is shown that for hole doping the effect of the nearest-neighbor Coulomb repulsion leads to the effective pinning of the Fermi energy, and to the creation of new states in the charge-transfer gap. For electron doping, however, the model behaves as a one-band Hubbard model with the Fermi energy moving into the conduction band. The results of this calculation are in qualitative agreement with some of the spectroscopic studies of the electronic structure at the Fermi energy of the high-temperature cuprate superconductors.
Exact diagonalisations of the extended two-band Hubbard model are performed. In the insulating regime it is shown that the nearest-neighbour copper-oxygen repulsion, V , leads to Frenkel excitons in the charge transfer gap at values of V of the order of copper-oxygen hybridisation, t . In the metallic regime it is shown that the static charge transfer and density-density correlation functions diverge as a function of V , indicating a charge transfer instability and phase separation. This is accompanied by a softening of the q → 0 mode of the dynamic correlation functions which is associated with the excitonic excitations responsible for the superconducting correlations observed in the proximity of the phase separation boundary described by C. Vermeulen et al. (C. Vermeulen et al. , Europhys. Lett. , 28 (1994) 653).
The three-band model relevant to high-temperature copper-oxide superconductors is solved using single-site dynamical mean field theory and a tight-binding parametrization of the copper and oxygen bands. For a band filling of one hole per unit cell the metal/charge-transfer-insulator phase diagram is determined. The electron spectral function, optical conductivity, and quasiparticle mass enhancement are computed as functions of electron and hole doping for parameters such that at one hole per cell the paramagnetic phase is insulating and for parameters such that at one hole per unit cell the paramagnetic phase is metallic. The optical conductivity is computed using the Peierls phase approximation for the optical matrix elements. The calculation includes the physics of ``Zhang-Rice singlets.'' The effects of antiferromagnetism on the magnitude of the gap and the relation between correlation strength and doping-induced changes in state density are determined. Three-band and one-band models are compared. The two models are found to yield quantitatively consistent results for all energies less than about 4 eV including energies in the vicinity of the charge-transfer gap. Parameters on the insulating side of the metal/charge-transfer insulator phase boundary lead to gaps which are too large and near-gap conductivities which are too small relative to data. The results place the cuprates clearly in the intermediate correlation regime, on the paramagnetic metal side of the metal/charge-transfer insulator phase boundary.
In this study, we investigate the metal-insulator transition of charge transfer type in high-temperature cuprates. We first show that we must introduce a new band parameter in the three-band model to reproduce the Fermi surface of high-temperature cuprates such as BSCCO, YBCO and Hg1201. We present a new wave function of a Mott insulator based on the improved Gutzwiller function, and show that there is a transition from a metal to a charge-transfer insulator for such parameters by using the variational Monte Carlo method. This transition occurs when the level difference between d and p orbitals reaches a critical value . The energy gain , measured from the limit of large , is proportional to for : . We obtain using the realistic band parameters.
An extended Hubbard model with large short and long-ranged Coulomb repulsions and distant transfer is numerically investigated by use of the Lanczos exact diagonalization (ED) method to study the charge order and unconditional dimerization of a chain at density rho (ρ)= 0.4. From the analysis of the spin and charge correlation functions, a picture consistent with the formation of a dimer insulating state, which is of Wigner lattice-type (WL) charge order (CO), is obtained. The next-nearest neighbour (NNN) hopping t2 enhances the intradimer correlations and weakens the interdimer correlations. Implications for the CuO2 chains in Sr14Cu24O41 are discussed.We have also introduced a Heisenberg model which parametrically depends on hole positions. If the electrostatic hole-hole repulsion is included such a model allows to evaluate all energy eigenvalues and eigenstates (for small system size) and thus enables us to evaluate thermodynamic properties as function of temperature,magnetic field, and doping. Assuming certain exchange constants we can investigate the influence of the electrostatic hole-hole repulsion on ground state properties as well as on thermal averages like the magnetization which include contributions of low-lying spin-hole configurations.
High-temperature superconductivity emerges upon doping a state of matter that is insulating because of interactions. A widely studied model considers one orbital per CuO2{\mathrm{CuO}}_{2}CuO2​ unit cell on a square lattice with a strong intraorbital repulsion that leads to a so-called Mott-Hubbard insulator. Here we solve a model that takes into account, within each unit cell, two oxygen orbitals where there is no electron-electron repulsion and a copper orbital with strong electron-electron repulsion. The insulating phase is a so-called charge-transfer insulator, not a Mott-Hubbard insulator. Using cluster dynamical mean-field theory with continuous-time quantum Monte Carlo as an impurity solver and 12 atoms per cluster, we report the normal and superconducting phase diagram of this model as a function of doping, interaction strength, and temperature. As expected, the three-orbital model is consistent with the experimental observation that doped holes are located predominantly on oxygens, a result that goes beyond the one-orbital model. Nevertheless, the phase boundary between pseudogap and correlated metal, the Widom line, and the origin of the pairing energy (kinetic vs potential) are similar to the one-orbital model, demonstrating that these are emergent phenomena characteristic of doped Mott insulators, independently of many microscopic details. Broader implications are discussed.