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arXiv:cond-mat/0702539 · Physical Review B

Generation of Einstein-Podolsky-Rosen pairs and interconversion of static and flying electron spin qubits

G. Giavaras, J. H. Jefferson, M. Fearn, Colin John Lambert

Published Dec 27, 2007• 9 citations
arXivHTMLPDF

Abstract

We propose a method of generating fully entangled electron spin pairs using an open static quantum dot and a moving quantum dot, realized by the propagation of a surface acoustic wave (SAW) along a quasi-one-dimensional channel in a semiconductor heterostructure. In particular, we consider a static dot (SD) loaded with two interacting electrons in a singlet state and demonstrate a mechanism which enables the moving SAW dot to capture and carry along one of the electrons, hence yielding a fully entangled static-flying pair. We also show how with the same mechanism we can load the SD with one or two electrons which are initially carried by a SAW-induced dot. The feasibility of realizing these ideas with existing semiconductor technology is demonstrated and extended to yield flying or static pairs that are fully entangled and arbitrary interconversion of static and flying electron spin qubits.

DOI
10.1103/physrevb.76.245328

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We propose a method of generating fully entangled electron spin pairs using an open static quantum dot and a moving quantum dot, realized by the propagation of a surface acoustic wave (SAW) along a quasi-one-dimensional channel in a semiconductor heterostructure. In particular, we consider a static dot (SD) loaded with two interacting electrons in a singlet state and demonstrate a mechanism which enables the moving SAW dot to capture and carry along one of the electrons, hence yielding a fully entangled static-flying pair. We also show how with the same mechanism we can load the SD with one or two electrons which are initially carried by a SAW-induced dot. The feasibility of realizing these ideas with existing semiconductor technology is demonstrated and extended to yield flying or static pairs that are fully entangled and arbitrary interconversion of static and flying electron spin qubits.
Motivated by recent experimental observations [M. Kataoka et al., Phys. Rev. Lett. 102, 156801 (2009)], we propose here a theoretical approach to implement quantum computation with bound states of electrons in moving quantum dots generated by the driving of surface acoustic waves. Differing from static quantum dots defined by a series of static electrodes above the two-dimensional electron gas (2DEG), here a single electron is captured from a 2DEG reservoir by a surface acoustic wave and then trapped in a moving quantum dot (MQD) transported across a quasi-one-dimensional channel, wherein all the electrons have been excluded by the actions of the surface gates. The flying qubit introduced here is encoded by the two lowest levels of the electron in the MQD, and the Rabi oscillation between these two levels could be implemented by applying finely selected microwave pulses to the surface gates. By using the Coulomb interaction between the electrons in different MQDs, we show that a desirable two-qubit operation, i.e., iswap gate, could be realized. Readouts of the present flying qubits are also feasible with the current single-electron detected technique.
We propose a scheme to produce spin entangled states for two interacting electrons. One electron is bound in a well in a semiconductor quantum wire and the second electron is transported along the wire, trapped in a surface acoustic wave (SAW) potential minimum. We investigate the conditions for which the Coulomb interaction between the two electrons induces entanglement. Detailed numerical investigation reveals that the two electrons can be fully spin entangled depending on the confinement characteristics of the well and the SAW potential amplitude.
We consider the entanglement of spins for two electrons contributing to the acoustoelectric current driven by a surface acoustic wave (SAW) in two adjacent narrow channels by calculating their exchange energy (J)(J)(J). The channels belong to an acoustic nanocircuit which comprises a network of quasi-one-dimensional pinched-off channels serving as wires along which SAW quantum dots transport electrons. This is motivated by possible practical applications involving quantum information processing and quantum computers. We calculate JJJ as a function of time as the electrons travel side-by-side in the adjacent channels and as a function of the distance between the centers of the channels. The leakage from the state in which the system is prepared, is calculated. The oscillations in the leakage indicate the probability for the electron system to make transitions between the ground and excited states, or for an electron to hop back and forth between channels.
The development of a working quantum computer utilizing electron-spin states as qubits is a major goal for many theorists and experimentalists. The future applications of quantum information technology would also require a reliable method for the transportation of information between different parts of the system. One such promising method is the propagation of electrons by a surface acoustic wave (SAW). In this paper, we simulate the SAW transfer of two interacting electrons through a Y\mathsf{Y}Y-shaped junction. Our results show that the singlet and triplet states can be differentiated in the Y\mathsf{Y}Y junction by an electrostatic detuning potential, an effect that could be used in, for example, measuring the state of a two-spin qubit.
Vertical spin-orbit coupling to produce quantum entanglement between electrons confined in quantum dots is investigated for a split-gate double layer heterostructure design. The quantum dots in each active layer may result from quantum point contact fabrication or be generated dynamically using a surface acoustic wave flying qubit approach. Optimization of spin-spin coupling versus all other couplings can set up competing requirements for heterostructure and device fabrication choices. In the present work, a series of active layers: indium antimonide, indium arsenide, indium gallium arsenide, and gallium arsenide, and device architectures is investigated. We find that device architectures that support spin entanglement are within achievable fabrication ranges for the active layer materials investigated.