Vertical spin-orbit coupling to produce quantum entanglement between electrons confined in quantum dots is investigated for a split-gate double layer heterostructure design. The quantum dots in each active layer may result from quantum point contact fabrication or be generated dynamically using a surface acoustic wave flying qubit approach. Optimization of spin-spin coupling versus all other couplings can set up competing requirements for heterostructure and device fabrication choices. In the present work, a series of active layers: indium antimonide, indium arsenide, indium gallium arsenide, and gallium arsenide, and device architectures is investigated. We find that device architectures that support spin entanglement are within achievable fabrication ranges for the active layer materials investigated.
Vertical spin-orbit coupling to produce quantum entanglement between electrons confined in quantum dots is investigated for a split-gate double layer heterostructure design. The quantum dots in each active layer may result from quantum point contact fabrication or be generated dynamically using a surface acoustic wave flying qubit approach. Optimization of spin-spin coupling versus all other couplings can set up competing requirements for heterostructure and device fabrication choices. In the present work, a series of active layers: indium antimonide, indium arsenide, indium gallium arsenide, and gallium arsenide, and device architectures is investigated. We find that device architectures that support spin entanglement are within achievable fabrication ranges for the active layer materials investigated.
Tuning spin-orbit coupling is essential in controlling both spin and charge in confined semiconductor nanostructures, yet it is rarely a truly controllable parameter. Here, we show control over the spin-orbit Hamiltonian in quantum dots and the resulting quantum states by tailoring the confinement potential with atomic-scale precision. Using scanning tunnelling microscopy and spectroscopy, we pattern individual Cs ions into designer quantum dot structures on the surface of indium antimonide, in which electrons from a two-dimensional electron gas are confined with chosen in-plane electric-field gradients. We then quantify the atomic level structure, both spatially resolving the orbital character of the electronic states and their magnetic-field evolution. We demonstrate that the level structure, including the induced zero-field splitting, can be tailored by the designed geometry of the local electric fields. These effects can be described using a Hamiltonian that allows consistent treatment of the confinement-induced spin-orbit coupling beyond the conventional Bychkov-Rashba description. This Hamiltonian is derived from a multiband k.p model and takes the energy dependence of the relevant physical parameters into account. Such precise control of spin-orbit coupling in semiconductor quantum dots is relevant to quantum and spintronic technologies.
An electron spin confined to a self-assembled semiconductor quantum dot is a candidate system to act as a quantum bit, a qubit. In order to act in this capacity it must be entangled with other qubits. Both electrons and holes are confined in such dots, allowing optical manipulation and emission of light. A single photon could act as an intermediary qubit, becoming entangled with a spin and conveying the entanglement from one spin to another. By an appropriate optical pulse sequence, a superposition state has been created, which upon radiative decay would be entangled with an emitted photon. A continuous wave beam optically pumps and measures the state in the interim before the next repetition of the pulse sequence. Here I describe the pulse sequence and measurement methods, display the experimental results, and show how to compute the entanglement of our state. Numerical simulations of the coherence of the generated state agree with the measured value of 0.28 out of a possible 0.5. The main cause of deviation from the ideal value is state relaxation during control pulse sequence. The fidelity of the state to the ideal precursor state is computed to be 0.81, and the entanglement that would result upon emission of a vertically polarized photon is 0.18, and simulations suggest 0.60 is possible with optimum design.
We propose a method of generating fully entangled electron spin pairs using an open static quantum dot and a moving quantum dot, realized by the propagation of a surface acoustic wave (SAW) along a quasi-one-dimensional channel in a semiconductor heterostructure. In particular, we consider a static dot (SD) loaded with two interacting electrons in a singlet state and demonstrate a mechanism which enables the moving SAW dot to capture and carry along one of the electrons, hence yielding a fully entangled static-flying pair. We also show how with the same mechanism we can load the SD with one or two electrons which are initially carried by a SAW-induced dot. The feasibility of realizing these ideas with existing semiconductor technology is demonstrated and extended to yield flying or static pairs that are fully entangled and arbitrary interconversion of static and flying electron spin qubits.
While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for electron spin qubit performance, as intravalley and intervalley SOC can significantly perturb the operation of electron spin qubits. While these interactions can be harnessed to drive coherent rotations in a singlet-triplet qubit, coupling to low-lying excited valley states can lead to undesirable spin relaxation when valley splitting is on resonance with the Zeeman energy. In this work, we measure the angular dependence of the interfacial spin-orbit interaction as a function of the direction and magnitude of an applied external magnetic field in SiMOS and Si/SiGe heterostructures, two common material platforms for silicon spin qubits. We construct a physical model that accurately infers intra- and inter-valley SOC physics from fits to the data, allowing for a direct comparison between these two material systems. For the devices measured we find that, while the g-factor differences are comparable, the SiMOS QDs exhibit an order of magnitude larger spin-valley coupling than for Si/SiGe. Moreover, we find that the angular dependence of the spin-valley coupling is similar for both devices, with similar magnetic field orientations minimizing the spin-valley coupling. Our work points towards operational schemes for optimizing spin-valley coupling to avoid or exploit this mechanism for qubit operation.
Solid state based quantum information processing is focused on physical implementation of all necessary elements of quantum computation and quantum information in solid state systems, mainly due to their scalability compared to e.g. optical systems. Among many proposals to realize these types of devices, such as quantum dots as charge qubits or Josephson junction circuits, we study here one of the most promising candidates, i.e., the spin of an electron confined to a quantum dot as a qubit. Experimentally, it has been shown that the relaxation rate of this two level system can be pushed above few seconds in low magnetic fields. Moreover, using spin echo techniques, \nthe spin dephasing time can be maximized up to milliseconds with the current technology. This long spin decay time is one of the main reasons that make this system desirable for quantum computation and quantum information purposes. \nWe reexamined the recent measurement based proposal called one-way quantum computation which exploits entanglement and local measurements as tools to perform quantum computation on N qubits. Although it was suggested in the original work to entangle the qubits via the nearest neighbor Ising interaction, we investigated how one can generate the so-called cluster states with the Heisenberg interaction. We extended our method to include more general forms of Heisenberg interaction such as asymmetric coupling of adjacent qubits. These forms of couplings, rather than Ising interaction, are more encountered in solid state devices, and therefore make it possible to perform one-way quantum computation with electron spins in quantum dots coupled via exchange interaction to their adjacent spins. \n \nChapters II, III, and IV of my thesis are devoted to the study of the spin-orbit interaction in heterostructure quantum dots and its effect on the spin dynamics. We observed that one can actually use spin-orbit interaction to manipulate the spin state of an electron on time scales much smaller than the spin dephasing time. Specifically, in chapter II, we studied the effect of a nearby functioning quantum point contact (QPC) on the relaxation of the electron spin and show that the charge fluctuations in QPC lead to spin relaxation of the confined electron in the presence of spin-orbit interactiom and an applied magnetic field. We also addressed the relation of this rate to the microscopic parameters of the system and found some geometrical dependence of the spin relaxation time on the orientation of the QPC on the substrate. Moreover, we showed in chapters III and IV that the spin-orbit interaction can play a positive role, in order to rotate the spin around the Bloch sphere. We considered different mechanisms, particularly, Electron Dipole Spin Resonance (EDSR) and holonomic unitary gates in quantum dots. We verified that these mechanisms of spin manipulation can be realized in solid state systems with the state of the art semiconductor technologies. \n \nChapter V of the thesis covers a slightly different topic and focuses on the role of the Coulomb interaction in electronic transport. There, we reviewed the non-analytic corrections to the Fermi liquid behavior and their consequences on the momentum occupation number of the electrons in a two dimensional electron gas (2DEG). As an example, we calculated the tunneling rate from an interacting electron reservoir onto a quantum dot and compared our result to the corresponding case for electron tunneling between bilayer 2DEGs. Moreover, within RPA approximation, we found that the electron-plasmon coupling leads to a quadratic frequency dependence of the electron self-energy at low frequencies at the Fermi surface. This correction suppresses the same order corrections due to the particle-hole bubble. \n \n \n
Micromagnet-free operation of electron spin qubits in Si/Si1−xGex vertical double quantum dots
We study a vertical double quantum dot (DQD) in a Si/Si1−xGex/Si double-well heterostructure for full electrical control of electron Loss-DiVincenzo (LD) spin qubits, using realistic device modeling and numerical simulations. Due to the emerging spin-orbit interaction in the DQD, as well as strain from the gate electrodes, small (percentage range) but finite g tensor variations emerge. In addition, we find a large valley splitting, on the order of Ev∼250μeV. As a result, multiple avenues for fast electrical single qubit rotations emerge. An ac electric field gives rise to electric dipole spin resonance (EDSR), while electron spin resonance (ESR) in the presence of an ac magnetic field can be electrically controlled by local gates due to varying g factors in DQDs. We also show that shuttling between neighboring dots, in vertical and horizontal direction, results in ultrafast single qubit gates of less than a nanosecond. Remarkably, this DQD architecture completely eliminates the need for micromagnets, significantly facilitating the scalability of LD spin qubits in semiconductor foundries.