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arXiv:cond-mat/0610068 · Physical Review B

Enhancement of the electron spin memory by localization on donors in a CdTe quantum well

Jérôme Tribollet, E. Aubry, G. Karczewski, B. Sermage, F. Bernardot, C. Testelin, M. Chamarro

Published May 2, 2007• 18 citations
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Abstract

We present easily reproducible experimental conditions giving rise to a long electron spin memory at low temperature. The proposed system consists of an electron localized by a donor potential, and immerged in a quantum well. We have measured, by using photoinduced Faraday rotation technique, the spin relaxation time of electrons localized on iodine donors placed at the middle of a $80\phantom{\rule{0.3em}{0ex}}\mathrm{\AA{}}$ CdTe quantum well, and we have obtained $20\phantom{\rule{0.3em}{0ex}}\mathrm{ns}$; this spin relaxation time is two orders of magnitude longer than for free electrons in a similar CdTe quantum well [J. Tribollet et al., Phys. Rev. B 68, 235316 (2003)].

DOI
10.1103/physrevb.75.205304

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arXiv:1907.12811•Physical review. B./Physical review. B•Sep 4, 2019•13 citations
We present easily reproducible experimental conditions giving rise to a long electron spin memory at low temperature. The proposed system consists of an electron localized by a donor potential, and immerged in a quantum well. We have measured, by using photoinduced Faraday rotation technique, the spin relaxation time of electrons localized on iodine donors placed at the middle of a 80A˚80\phantom{\rule{0.3em}{0ex}}\mathrm{\AA{}}80A˚ CdTe quantum well, and we have obtained 20ns20\phantom{\rule{0.3em}{0ex}}\mathrm{ns}20ns; this spin relaxation time is two orders of magnitude longer than for free electrons in a similar CdTe quantum well [J. Tribollet et al., Phys. Rev. B 68, 235316 (2003)].
Étude de l'influence de la concentration et de la température sur le temps de relaxation de spin des donneurs immergés dans un puit quantique du CdTe Ce travail présente une étude de l'influence de la concentration de dopage, de la température et du champ magnétique longitudinal sur le temps de relaxation de spin des électrons liés aux donneurs immergés au milieu d'un puits quantique (PQ) de CdTe. En insérant les donneurs dans un PQ, les règles de sélection optique de la lumière polarisée circulairement sont purifiées, ce qui permet un meilleur degré d'orientation optique des spins des électrons que dans les cristaux 3D. En utilisant une technique de rotation Faraday photo-induite, nous mesurons d’abord le temps de relaxation de spin des électrons liés aux donneurs pour différentes concentrations de dopage à basse température dans le régime isolant. Ensuite, pour évaluer les mécanismes de relaxation de spin dans notre système, nous calculons l'énergie d'échange d'une paire d'électrons liés aux donneurs immergés au milieu d'un PQ infini, pour toute distance inter-donneur et différentes épaisseurs. En utilisant ce calcul, nous expliquons le comportement expérimental comme une interaction de deux mécanismes : l’interaction hyperfine et l’anisotrope d’échange. De plus, nous déterminons la constante spin-orbite dans CdTe αso = 0.079. Ensuite, nous présentons le développement d’une expérience pompe-sonde étendue permettant de mesurer les temps de relaxation de spin à l’échelle microseconde. Nous discutons brièvement des premiers résultats expérimentaux pour le temps de relaxation de spin longitudinal d'électrons liés aux donneurs immergés dans un PQ de CdTe avec différentes concentrations de dopage. Enfin, nous étudions l'évolution en température de la relaxation de spin de 10 à 80 K. On explique le comportement expérimental en invoquant l'échange de spin entre les électrons localisés et le spin d'électrons promus en états de conduction. Le spin des électrons localisés subit l’effet des interactions hyperfine et anisotrope, le mécanisme de D’yakonov-Perel’ régit la relaxation de spin des électrons de conduction.
The carrier spin dynamics in a nnn-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very different spectral dependencies, from which nonetheless consistent information on the spin dynamics can be obtained, in agreement with theoretical predictions. The mechanisms of long-lived spin coherence generation are discussed for the cases of trion and exciton resonant excitation. We demonstrate that carrier localization leads to a saturation of spin relaxation times at 45 ns for electrons below 4.5 K and at 2 ns for holes below 2.3 K. The underlying spin relaxation mechanisms are discussed.
Systematic investigation of the spin dephasing times in GaAs/(Al,Ga)As quantum wells and its depending on parameters like temperature, magnetic fields and doping will be shown in Chapter 3.In Chapter 4 are presented results of investigation of the nuclear spin systems in quantum well heterostructures.The chapter 5 presents the results of studying the carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum wells by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 mil-liKelvin.In Chapter 6 is devoted to experimental and theoretically studying of optical control of the spin coherence of quantum well electrons by short laser pulses with circular or linear polarization.For that purpose the coherent electron spin dynamics in a n-doped CdTe/(Cd,Mg)Te quantum well structure was measured by time-resolved pump-probe Kerr rotation, using resonant excitation of the negatively charged exciton (trion) state.on the eigenstates |s z ; ↑ and |s z ; ↓ yields the states themselves independent of time.Along the field axis (longitudinal direction) these quantum-mechanical spin states are thus stationary.Any loss of coherence is induced by coupling of those states with the environment.Applying the time-evolution operator on the spin states perpendicular
The possibility to store optical information is important for classical and quantum communication. Atoms or ions as well as color centers in crystals offer suitable two-level systems for absorbing incoming photons. To obtain a reliable transfer of coherence, strong enough light-matter interaction is required, which may enforce use of ensembles of absorbers, but has the disadvantage of unavoidable inhomogeneities leading to fast dephasing. This obstacle can be overcome by echo techniques that allow recovery of the information as long as the coherence is preserved. Albeit semiconductor quantum structures appear appealing for information storage due to the large oscillator strength of optical transitions, inhomogeneity typically is even more pronounced for them and most importantly the optical coherence is limited to nanoseconds or shorter. Here we show that by transferring the information to electron spins the storage times for the optical coherence can be extended by orders of magnitude up to the spin relaxation time. From the spin reservoir it can be retrieved on purpose by inducing a stimulated photon echo. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well for which the storage time thereby could be increased by more than three orders of magnitude from the picosecond-range up to tens of nanoseconds.
Spin-dependent photon echoes in combination with pump-probe Kerr rotation are used to study the microscopic electron spin transport in a CdTe/(Cd,Mg)Te quantum well in the hopping regime. We demonstrate that, independent of the particular spin relaxation mechanism, the hopping of resident electrons leads to a shortening of the photon echo decay time, while the transverse spin relaxation time evaluated from pump-probe transients increases due to motional narrowing of spin dynamics in the fluctuating effective magnetic field of the lattice nuclei.