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arXiv:cond-mat/0512615 · Physical Review B

Dynamics of Josephson junctions and single-flux-quantum networks with superconductor–insulator–normal-metal junction shunts

Alexander B Zorin, E. Tolkacheva, M. Khabipov, F.-I. Buchholz, J. Niemeyer

Published Jul 14, 2006• 13 citations
arXivHTMLPDF

Abstract

Within the framework of the microscopic model of tunneling, we modeled the behavior of the Josephson junction shunted by the superconductor--insulator--normal-metal (SIN) tunnel junction. The electromagnetic impedance of the SIN junction includes both the frequency-dependent damping and reactance, which affect the circuit dynamics. We calculated the dc $I\text{\ensuremath{-}}V$ curves and transient characteristics and show their differences to the characteristics obtained within the simpler models. The correct operation of the basic single-flux-quantum circuits, i.e., the Josephson transmission line and the toggle flip-flop, based on such SIN-shunted Josephson junctions with small damping at low frequencies, has also been modeled.

DOI
10.1103/physrevb.74.014508

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Double-barrier Josephson junctions, with outer electrodes of superconducting Nb and a central thin layer of non-superconducting Al, are being developed as self-shunted junctions for high-frequency superconducting integrated circuits. This paper presents a simplified phenomenological model of the behaviour of such junctions (often called SINIS, for superconductor-insulator-normal-insulator-superconductor) based on the resistively shunted junction model, using Josephson coupling between the layers and the time-dependent Ginzburg-Landau equation to describe the dynamics of the weak induced energy gap in the Al layer. This analysis shows how non-hysteretic I - V characteristics can be obtained but suggests some limitations in their high-frequency performance. Predictions for critical current generally agree with prior experiments. The technological implications of this model are discussed.

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Within the framework of the microscopic model of tunneling, we modeled the behavior of the Josephson junction shunted by the superconductor--insulator--normal-metal (SIN) tunnel junction. The electromagnetic impedance of the SIN junction includes both the frequency-dependent damping and reactance, which affect the circuit dynamics. We calculated the dc I\ensuremath-VI\text{\ensuremath{-}}VI\ensuremath-V curves and transient characteristics and show their differences to the characteristics obtained within the simpler models. The correct operation of the basic single-flux-quantum circuits, i.e., the Josephson transmission line and the toggle flip-flop, based on such SIN-shunted Josephson junctions with small damping at low frequencies, has also been modeled.
Abstract This study is devoted to the investigation of tunneling superconductor–insulator–superconductor (SIS) Josephson junctions with a new type of shunt based on an additional superconductor–insulator–normal metal (SIN) junction placed around the SIS junction. In the course of study, the parameters of such shunted junctions are numerically calculated and their current–voltage characteristics (IVC) are simulated. The designed structures are assembled in real samples and their parameters are studied; the IVC of junctions with different degrees of shunting are measured, and the behavior of these junctions under the influence of high-frequency signals in the subterahertz range is studied.
We demonstrate that shunting of superconductor-insulator-superconductor (S-I-S) Josephson junctions by superconductor-insulator-normal metal (S-I-N) structures having pronounced nonlinear I–V characteristics can remarkably modify the Josephson dynamics. In the regime of Josephson generation the phase behaves as an overdamped coordinate, while in the superconducting state the damping and current noise are strikingly small, that is vitally important for application of such junctions for readout and control of Josephson qubits. Superconducting Nb/AlOx/Nb junction shunted by Nb/AlOx/AuPd junction of S-I-N type was fabricated and, in agreement with our model, exhibited nonhysteretic I–V characteristics at temperatures down to at least 1.4 K.
Abstract We report on the electrical properties of NbN/TaN/NbN Josephson junctions grown on thermally oxidized silicon substrates, along with the design and fabrication of superconducting single-flux-quantum (SFQ) circuits based on these NbN superconductor/normal metal/superconductor (SNS) junctions. The critical current density ( J c ) of the junctions was found to be relatively sensitive to the barrier thickness, decreasing from 108.0 ± 8.1 kA cm −2 for a 15 nm barrier to 12.8 ± 1.9 kA cm −2 for a 30 nm barrier. For a J c of approximately 24.5 ± 2.1 kA cm −2 and a barrier thickness of 25 nm, the NbN SNS junctions are self-shunted and exhibit nonhysteretic current–voltage ( I – V ) characteristics. Especially for junctions with diameter ( φ ) ranging from 0.8 to 1.6 μ m, their critical current ( I c ) falls within the range of 110–450 μ A, making them suitable for SFQ circuits. By considering the impact of excess current and incorporating it as an additional term in the conventional resistively and capacitively shunted junction model, the I – V curves of NbN SNS junctions can be precisely described, successfully minimizing the deviation between simulations and test results. The DC-SFQ and SFQ-DC interface circuits can both operate normally, and the bias margins of cell circuits such as Josephson transmission line, confluence buffer, D flip-flop, and splitter are greater than 40%. Compared to Nb superconductor/insulator/superconductor junctions, their self-shunting characteristics and relatively thick 25 nm barriers can also enhance the integration of circuits and increase the yield to complex circuits.
This work is devoted to the study of tunnel Josephson superconductor-insulator-superconductor (SIS) junctions with a new type of shunting based on the usage of an additional superconductor-insulator-normal metal (NIS) junction located around the SIS junction. Numerical calculations of the parameters of such shunted junctions were carried out and modeling of their IVC (current-voltage characteristics) was performed. The designed samples were manufactured, their parameters were studied. To investigate the behavior of junctions under the influence of high-frequency signals in the sub-THz range, their IVCs were measured. Keywords: Superconducting devices, superconductor-insulator-superconductor tunnel junction, Josephson effect, shunting of Josephson junctions.
We have measured the current-voltage $(I\ensuremath{-}V)$ characteristics of small-capacitance single Josephson junctions at low temperatures (T=0.02−−0.6K),(T=0.02--0.6\mathrm{K}),(T=0.02−−0.6K), where the strength of the coupling between the single junction and the electromagnetic environment was controlled with one-dimensional arrays of dc superconducting quantum interence devices (SQUIDs). The single-junction $I\ensuremath{-}V$ curve is sensitive to the impedance of the environment, which can be tuned in situ. We have observed Coulomb blockade of Cooper-pair tunneling and even a region of negative differential resistance, where the zero-bias resistance ${R}_{0}^{\ensuremath{'}}$ of the SQUID arrays is much higher than the quantum resistance ${R}_{K}\ensuremath{\equiv}{h/e}^{2}\ensuremath{\approx}26\mathrm{k}\ensuremath{\Omega}.$ The negative differential resistance is evidence of the coherent single-Cooper-pair tunneling within the theory of current-biased single Josephson junctions. Based on this theory, we have calculated the $I\ensuremath{-}V$ curves numerically in order to compare then with the experimental ones at ${R}_{0}^{\ensuremath{'}}\ensuremath{\gg}{R}_{K}.$ The numerical calculation agrees with the experiments qualitatively. We also discuss the ${R}_{0}^{\ensuremath{'}}$ dependence of the single-Josephson-junction $I\ensuremath{-}V$ curve in terms of the superconductor-insulator transition driven by changing the coupling to the environment.
Double-barrier Josephson junctions, with outer electrodes of superconducting Nb and a central thin layer of non-superconducting Al, are being developed as self-shunted junctions for high-frequency superconducting integrated circuits. This paper presents a simplified phenomenological model of the behaviour of such junctions (often called SINIS, for superconductor-insulator-normal-insulator-superconductor) based on the resistively shunted junction model, using Josephson coupling between the layers and the time-dependent Ginzburg-Landau equation to describe the dynamics of the weak induced energy gap in the Al layer. This analysis shows how non-hysteretic I - V characteristics can be obtained but suggests some limitations in their high-frequency performance. Predictions for critical current generally agree with prior experiments. The technological implications of this model are discussed.