We show that driven qubit junctions enable programmable control of physical entropy transport, with entropy conductance governed by quantum dynamics rather than by reservoir parameters alone. By comparing two simple quantum architectures -- a driven single-qubit junction and a driven two-qubit junction -- we find that the two-qubit junction enhances entropy transfer while requiring substantially lower driving power than its single-qubit counterpart. We further reveal two non-intuitive effects in both junctions: a sizable coherent contribution to the entropy current that emerges only under resonant driving, and negative differential entropy conductance, where increasing the thermal bias suppresses entropy flow into the probe reservoir. These results identify quantum logic architectures as programmable devices for entropy transport and suggest routes toward quantum feedback control, reservoir protection and refrigeration in driven quantum circuits.We show that driven qubit junctions enable programmable control of physical entropy transport, with entropy conductance governed by quantum dynamics rather than by reservoir parameters alone. By comparing two simple quantum architectures -- a driven single-qubit junction and a driven two-qubit junction -- we find that the two-qubit junction enhances entropy transfer while requiring substantially lower driving power than its single-qubit counterpart. We further reveal two non-intuitive effects in both junctions: a sizable coherent contribution to the entropy current that emerges only under resonant driving, and negative differential entropy conductance, where increasing the thermal bias suppresses entropy flow into the probe reservoir. These results identify quantum logic architectures as programmable devices for entropy transport and suggest routes toward quantum feedback control, reservoir protection and refrigeration in driven quantum circuits.

quant-pharXiv:2607.12581Jul 15, 20260 citations

Planarized Process for Single-Flux-Quantum Circuits With Self-Shunted Nb/Nb $_{x}$ Si $_{1-x}$ /Nb Josephson JunctionsPlanarized Process for Single-Flux-Quantum Circuits With Self-Shunted Nb/Nb$_{x}$Si$_{1-x}$/Nb Josephson Junctions

David I. Olaya, Manuel A. Castellanos-Beltran, Javier F. Pulecio +6 more

We describe our process for fabricating single-flux-quantum circuits for applications in communications metrology, advanced computing, and quantum information. The process flow includes four superconducting metal layers, one junction layer, one palladium-gold bias resistor layer, and a contact pad layer. Planarization using chemical-mechanical polishing is performed on the two lower insulating layers. This process is based on Josephson junctions with niobium superconducting electrodes and self-shunted, amorphous niobium-doped silicon barriers on the insulating side near the metal-insulator transition. The barrier material is deposited by cosputtering silicon and niobium, with the junction properties controlled by the relative sputtering powers and the duration of the barrier deposition step. The profiles of the deposition rates across 3-in (76.2 mm) wafers give a corresponding radial profile of the critical current density Jcthat increases by ~46% from the center to the edge of the wafer. To characterize our process, we have measured and show data for niobium metal quality and its magnetic penetration depth, as well as for wire and via inductances, and for via critical currents. The uniformity of the junction critical current Icacross a wafer was measured on test chips with 2.7-μm-diameter junctions. Within a 5 mm × 5 mm area, the standard deviation of Icwas ~2% for chips near the center of the wafer and up to ~7% for chips near the edge. We also describe process improvements and innovations under development aimed at increasing circuit density and high-speed performance.We describe our process for fabricating single-flux-quantum circuits for applications in communications metrology, advanced computing, and quantum information. The process flow includes four superconducting metal layers, one junction layer, one palladium-gold bias resistor layer, and a contact pad layer. Planarization using chemical-mechanical polishing is performed on the two lower insulating layers. This process is based on Josephson junctions with niobium superconducting electrodes and self-shunted, amorphous niobium-doped silicon barriers on the insulating side near the metal-insulator transition. The barrier material is deposited by cosputtering silicon and niobium, with the junction properties controlled by the relative sputtering powers and the duration of the barrier deposition step. The profiles of the deposition rates across 3-in (76.2 mm) wafers give a corresponding radial profile of the critical current density Jcthat increases by ~46% from the center to the edge of the wafer. To characterize our process, we have measured and show data for niobium metal quality and its magnetic penetration depth, as well as for wire and via inductances, and for via critical currents. The uniformity of the junction critical current Icacross a wafer was measured on test chips with 2.7-μm-diameter junctions. Within a 5 mm × 5 mm area, the standard deviation of Icwas ~2% for chips near the center of the wafer and up to ~7% for chips near the edge. We also describe process improvements and innovations under development aimed at increasing circuit density and high-speed performance.

IEEE Transactions on Applied SuperconductivityMar 16, 201926 citations

State Ensembles and Quantum Entropy

Subhash Kak

arXiv:1509.03220International Journal of Theoretical PhysicsJan 30, 201611 citations

Excess noise in thin film grain boundary Josephson junctions and devices

L Hao, J.C. Macfarlane, Colin M. Pegrum

The subject of electronic noise in high- superconducting Josephson devices and in their applications is considered. Several types of grain boundary junctions, prepared in different ways by four separate international laboratories, are fully characterized in terms of their electrical and noise properties at a range of temperatures, frequencies, magnetic fields and in the presence of microwaves. Similar characterization is carried out for multijunction Josephson flux-flow arrays, and bi-epitaxial SQUIDs. The theory of Likharev and Semenov for thermal noise in low- junctions is adopted as a reference against which excess noise can be identified in high- junctions. It is combined with theoretical models of excess noise based on fluctuations of critical current and resistance to provide accurate fitting of the observed noise curves. It is shown that the normalized levels of critical current and normal resistance fluctuations for all of the junction types examined are remarkably close (typically around and at 100 Hz) and are nearly independent of temperature in the range T = 30 - 80 K. The frequency dependence is close to the universal 1/f law with some deviations due to trapping of charge carriers at discrete states in the tunnelling barrier. Measurements of voltage noise levels and critical current fluctuations in multijunction flux-flow amplifiers, reported for the first time, are consistent with levels in single junctions of the same type. Excess noise is studied as a function of external magnetic field, in a way that has not been previously described. A new interpretation of the magnetic field-dependent noise data indicates that absolute levels of critical current fluctuations are nearly independent of applied magnetic field. This observation does not appear to have been reported elsewhere. It has important implications for the operation of grain boundary Josephson devices in real applications. Voltage noise in the presence of microwave irradiation, at operating points between Shapiro steps, is consistent with a modified form of the Likharev - Semenov equation which takes into account the known level of critical current fluctuations as measured in field-free conditions. The implications of these results for further improvements in device performance are discussed, and directions for further work are suggested.The subject of electronic noise in high- superconducting Josephson devices and in their applications is considered. Several types of grain boundary junctions, prepared in different ways by four separate international laboratories, are fully characterized in terms of their electrical and noise properties at a range of temperatures, frequencies, magnetic fields and in the presence of microwaves. Similar characterization is carried out for multijunction Josephson flux-flow arrays, and bi-epitaxial SQUIDs. The theory of Likharev and Semenov for thermal noise in low- junctions is adopted as a reference against which excess noise can be identified in high- junctions. It is combined with theoretical models of excess noise based on fluctuations of critical current and resistance to provide accurate fitting of the observed noise curves. It is shown that the normalized levels of critical current and normal resistance fluctuations for all of the junction types examined are remarkably close (typically around and at 100 Hz) and are nearly independent of temperature in the range T = 30 - 80 K. The frequency dependence is close to the universal 1/f law with some deviations due to trapping of charge carriers at discrete states in the tunnelling barrier. Measurements of voltage noise levels and critical current fluctuations in multijunction flux-flow amplifiers, reported for the first time, are consistent with levels in single junctions of the same type. Excess noise is studied as a function of external magnetic field, in a way that has not been previously described. A new interpretation of the magnetic field-dependent noise data indicates that absolute levels of critical current fluctuations are nearly independent of applied magnetic field. This observation does not appear to have been reported elsewhere. It has important implications for the operation of grain boundary Josephson devices in real applications. Voltage noise in the presence of microwave irradiation, at operating points between Shapiro steps, is consistent with a modified form of the Likharev - Semenov equation which takes into account the known level of critical current fluctuations as measured in field-free conditions. The implications of these results for further improvements in device performance are discussed, and directions for further work are suggested.

Superconductor Science and TechnologyAug 1, 199634 citations

Planarized Process for Single-Flux-Quantum Circuits With Self-Shunted Nb/Nb

_{x}

_{1-x}

/Nb Josephson Junctions