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arXiv:cond-mat/0501191 · Journal of Experimental and Theoretical Physics

Auxiliary-level-assisted operations with charge qubits in semiconductors

L. А. Openov

Published May 1, 2005• 7 citations
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Abstract

We present a new scheme for rotations of a charge qubit associated with a singly ionized pair of donor atoms in a semiconductor host. The logical states of such a qubit proposed recently by Hollenberg et al. [16] are defined by the lowest two energy states of the remaining valence electron localized around one or another donor. We show that an electron located initially at one donor site can be transferred to another donor site via an auxiliary molecular level formed upon the hybridization of the excited states of two donors. The electron transfer is driven by a single resonant microwave pulse in the case where the energies of the lowest donor states coincide or by two resonant pulses in the case where they differ from each other. Depending on the pulse parameters, various one-qubit operations—including the phase gate, the NOT gate, and the Hadamard gate—can be realized in short times. Decoherence of an electron due to the interaction with acoustic phonons is analyzed and shown to be weak enough for coherent qubit manipulation to be possible, at least in proof-of-principle experiments on one-qubit devices.

DOI
10.1134/1.1947310

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We present a new scheme for rotations of a charge qubit associated with a singly ionized pair of donor atoms in a semiconductor host. The logical states of such a qubit proposed recently by Hollenberg et al. [16] are defined by the lowest two energy states of the remaining valence electron localized around one or another donor. We show that an electron located initially at one donor site can be transferred to another donor site via an auxiliary molecular level formed upon the hybridization of the excited states of two donors. The electron transfer is driven by a single resonant microwave pulse in the case where the energies of the lowest donor states coincide or by two resonant pulses in the case where they differ from each other. Depending on the pulse parameters, various one-qubit operations—including the phase gate, the NOT gate, and the Hadamard gate—can be realized in short times. Decoherence of an electron due to the interaction with acoustic phonons is analyzed and shown to be weak enough for coherent qubit manipulation to be possible, at least in proof-of-principle experiments on one-qubit devices.
A scheme is proposed for rotations of a double-donor charge qubit whose logical states are defined by the two lowest energy states of a single electron localized around one or another donor. It is shown that making use of the microwave pulses tuned to the resonance with an auxiliary excited molecular level allows for implementation of various one-qubit operations in very short times. Decoherence effects are analyzed by the example of the P2+:Si{\mathrm{P}}_{2}^{+}:\mathrm{Si}P2+​:Si system and shown to be weak enough for experimental realization of this scheme being possible.
We study theoretically the quantum dynamics of an electron in the singly ionized double-donor structure in the semiconductor host under the influence of laser pulses whose frequencies are close to structure resonant frequencies. This system can be used as a charge qubit where the logical states are defined by the lowest two energy states of the remaining valence electron localized around one or another donor. The quantum operations are performed via resonant or Raman-like transitions between the localized (qubit) states and the excited states delocalized over the structure, combined with phase shifts between qubit states generated by voltage pulses. The possibility of realization of arbitrary single-qubit rotations is demonstrated.
Quantum operations with a charge solid-state qubit whose logical states are formed by two spatially separated localized states of an electron in the double-dot structure are studied theoretically. We show that it is possible to perform various one-qubit rotations making use of the microwave pulses tuned to the resonances between the localized states and the excited state delocalized over the nanostructure. An explicit analytic expression for the time-dependent electron state vector is derived, and the appropriate pulse parameters are determined.
Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in the atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor crystal, one of which is singly ionized. Surface electrodes control the qubit and a radio-frequency single-electron transistor provides fast readout. The calculated single gate times, of order 50 ps or less, are much shorter than the expected decoherence time. We propose universal one- and two-qubit gate operations for this system and discuss prospects for fabrication and scale up.
Quantum operations with a charge solid-state qubit whose logical states are formed by two spatially separated localized states of an electron in the double-dot structure are studied theoretically. We show that it is possible to perform various one-qubit rotations making use of the microwave pulses tuned to the resonances between the localized states and the excited state delocalized over the nanostructure. Explicit analytic expression for the time-dependent electron state vector is derived, and the appropriate pulse parameters are determined. PACS Numbers: 03.67.Lx, 73.21.La, 85.35.-p During past decade, quantum computing (QC) or, more generally, quantum information processing, attracted much attention [1]. The reasons for that interest are (i) the existence of quantum algorithms [2] that could perform calculations exponentially faster as compared with classical ones (QC software), and (ii) the rapid development of technology and material science [3] that allowed to realize some prototypes of QC devices (QC hardware). The key elements of the QC hardware are
The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron’s charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a ‘hybrid’ qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the ‘sweet spot’ for charge qubit operation. Along with fast ( >GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes.