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arXiv:cond-mat/0411249 · Applied Physics Letters

Diamond chemical-vapor deposition on optical fibers for fluorescence waveguiding

J. R. Rabeau, Shane T. Huntington, Andrew D. Greentree, Steven Prawer

Published Mar 21, 2005• 78 citations
arXivHTMLPDF

Abstract

A technique has been developed for depositing diamond crystals on the endfaces of optical fibers and capturing the fluorescence generated by optically active defects in diamond into the fiber. This letter details the diamond growth on optical fibers and transmission of fluorescence through the fiber from the nitrogen-vacancy color center in diamond. Control of the concentration of defects incorporated during the chemical vapor deposition growth process is also demonstrated. These are critical steps in developing a fiber coupled single-photon source based on optically active defect centers in diamond.

DOI
10.1063/1.1890484

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Fabrication of single nickel-nitrogen (NE8) defect centers in diamond by chemical vapor deposition is demonstrated. Under continuous-wave 745nm laser excitation single defects were induced to emit single photon pulses at 797nm with a linewidth of 1.5nm at room temperature. Photon antibunching of single centers was demonstrated using a Hanbury–Brown and Twiss interferometer. Confocal images revealed approximately 106 optically active sites∕cm2 in the synthesized films. The controlled fabrication of an NE8 based single photon source in synthetic diamond is important for fiber based quantum cryptography, and potentially linear optics quantum computing.
The electronic spins of the nitrogen-vacancy (NV) centers in chemical-vapor-deposition (CVD) grown diamonds form ideal probes of magnetic fields and temperature, as well as promising qubits for quantum information processing. Studying and controlling the magnetic environment of NV centers in such high-purity crystals is thus essential for these applications. We demonstrate optical detection of paramagnetic species, such as hydrogen-related complexes, in a CVD-grown diamond. The resonant transfer of the NV centers' polarized electronic spins to the electronic spins of these species generates conspicuous features in the NV photoluminescence when employing magnetic field scans along the [100] crystal direction. Our results offer prospects for more detailed studies of CVD-grown processes as well as for coherent control of the spin of novel classes of hyperpolarized paramagnetic species.
We demonstrate the coupling of single color centers in diamond to plasmonic and dielectric photonic structures to realize novel nanophotonic devices. Nanometer spatial control in the creation of single color centers in diamond is achieved by implantation of nitrogen atoms through high-aspect-ratio channels in a mica mask. Enhanced broadband single-photon emission is demonstrated by coupling nitrogen-vacancy centers to plasmonic resonators, such as metallic nanoantennas. Improved photon-collection efficiency and directed emission is demonstrated by solid immersion lenses and micropillar cavities. Thereafter, the coupling of diamond nanocrystals to the guided modes of micropillar resonators is discussed along with experimental results. Finally, we present a gas-phase-doping approach to incorporate color centers based on nickel and tungsten, in situ into diamond using microwave-plasma-enhanced chemical vapor deposition. The fabrication of silicon-vacancy centers in nanodiamonds by microwave-plasma-enhanced chemical vapor deposition is discussed in addition.
Abstract The work reports the manipulation of nitrogen-vacancy centres in chemical vapor deposition grown single crystal diamonds by incorporation of nitrogen, boron and oxygen during the growth process. Single photon emission measurements were performed on diamond samples by using continuous wave and pulsed laser of wavelength 532 nm. The second order auto-correlation measurement 0.3 < g 2 ( 0 ) < 0.6 on nitrogen incorporated diamond sample shows the anti-bunching behavior of photons emerging from the population of one- and two-color centres. However, the correlation measurement 0.6 < g 2 ( 0 ) < 0.8 on oxygen and boron incorporated diamond samples show the anti-bunching behaviour of photons due to population of two- and three-color centres present in the samples. The result opens the possibilities of in situ development of nitrogen-vacancy centres in diamond during the growth process for next generation quantum computing devices.
Abstract The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV − concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth and subsequent NV creation. In this work, we systematically investigate the NV center formation and properties in bulk chemical vapor deposition (CVD) diamond. The nitrogen flow during growth is varied by over four orders of magnitude, resulting in a broad range of single substitutional nitrogen concentrations of 0.2–20 parts per million. For a fixed nitrogen concentration, we optimize electron-irradiation fluences with two different accelerated electron energies, and we study defect formation via optical characterizations. We discuss a general approach to determine the optimal irradiation conditions, for which an enhanced NV concentration and an optimum of NV charge states can both be satisfied. We achieve spin–spin coherence times T 2 ranging from 45.5 to 549 μ s for CVD diamonds containing 168 to 1 parts per billion NV − centers, respectively. This study shows a pathway to engineer properties of NV-doped CVD diamonds for improved sensitivity.