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Physica Scripta

Single photon emission from in situ created nitrogen-vacancies in chemical vapor deposition grown single crystal diamond

Vivek K Shukla, Himanshu Kumar Poswal, A Kala, Venu Gopal Achanta, Abhijit Majumder, Kasturi Saha, Padmnabh Rai

Published Feb 27, 2024• 4 citations
Publisher

Abstract

Abstract The work reports the manipulation of nitrogen-vacancy centres in chemical vapor deposition grown single crystal diamonds by incorporation of nitrogen, boron and oxygen during the growth process. Single photon emission measurements were performed on diamond samples by using continuous wave and pulsed laser of wavelength 532 nm. The second order auto-correlation measurement 0.3 < g 2 ( 0 ) < 0.6 on nitrogen incorporated diamond sample shows the anti-bunching behavior of photons emerging from the population of one- and two-color centres. However, the correlation measurement 0.6 < g 2 ( 0 ) < 0.8 on oxygen and boron incorporated diamond samples show the anti-bunching behaviour of photons due to population of two- and three-color centres present in the samples. The result opens the possibilities of in situ development of nitrogen-vacancy centres in diamond during the growth process for next generation quantum computing devices.

DOI
10.1088/1402-4896/ad2da4

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For applications in Quantum Information and Quantum Key Distribution an on-demand source of single photons is desirable because absolute security is of utmost importance. Photons are quantum systems; hence encoding information onto them offers a secure alternative to classical cryptography as a measurement cannot be performed on photons without altering their properties. The Nitrogen Vacancy (NV) centre in diamond is a good source of such photons. It is photo-stable and its location in diamond offers robustness. It has zero phonon line at 637 nm and its relative short luminescence life-time of about 12 ns makes it suitable for generating single photons. This thesis covers two aspects: Firstly the characterization of defects in diamonds and subsequent selection of diamonds suitable for use in the single photon setup and secondly, the development of the experimental setup for single photon generation. This thesis sets out to describe the development of a laboratory based single photon source using the NV centre in diamond. For this purpose a suite of diamond samples were selected and subjected to various spectroscopic tests in order to characterize and classify the samples, especially the presence of the NV centres and their concentrations. The characterization of the defects was done through the use of the following spectroscopic techniques: UltravioletVisible-Near infrared spectroscopy, Infrared spectroscopy, Electron Spin Resonance and Photoluminescence. These techniques enabled us to understand the types and origins of crystal defects that were present in the diamond samples used in this study and to use this to select diamonds that are most suitable for use in generation of single photons. The experimental setup for single photon generation using the NV centre is based on a confocal microscope arrangement. Single NV centres were identified by measuring the second order autocorrelation function of the fluorescence light emitted by the sample when illuminated with a laser. This measurement was done using a Hanbury-Brown Twiss (HBT) interferometer.

•Jan 1, 2009•0 citations
Abstract The work reports the manipulation of nitrogen-vacancy centres in chemical vapor deposition grown single crystal diamonds by incorporation of nitrogen, boron and oxygen during the growth process. Single photon emission measurements were performed on diamond samples by using continuous wave and pulsed laser of wavelength 532 nm. The second order auto-correlation measurement 0.3 < g 2 ( 0 ) < 0.6 on nitrogen incorporated diamond sample shows the anti-bunching behavior of photons emerging from the population of one- and two-color centres. However, the correlation measurement 0.6 < g 2 ( 0 ) < 0.8 on oxygen and boron incorporated diamond samples show the anti-bunching behaviour of photons due to population of two- and three-color centres present in the samples. The result opens the possibilities of in situ development of nitrogen-vacancy centres in diamond during the growth process for next generation quantum computing devices.
Single-photon sources are a fundamental element for developing quantum technologies, and sources based on colour centres in diamonds are among the most promising candidates. The well-known nitrogen vacancy centres are characterized by several limitations, and thus few other defects have recently been considered. In the present work, we characterize, in detail, native efficient single colour centres emitting in the near infra-red ( λ = 740–780 nm) in both standard IIa single-crystal and electronic-grade polycrystalline commercial chemical vapour deposited (CVD) diamond samples. In the former case, a high-temperature ( T > 1000 °C) annealing process in vacuum is necessary to induce the formation/activation of luminescent centres with good emission properties, while in the latter case the annealing process has marginally beneficial effects on the number and performance of native centres in commercially available samples. Although displaying significant variability in several photo-physical properties (emission wavelength, emission rate instabilities, saturation behaviours), these centres generally display appealing photophysical properties for applications as single photon sources: short lifetimes (0.7–3 ns), high emission rates (∼50–500 × 10 3 photons s −1 ) and strongly (>95%) polarized light. The native centres are tentatively attributed to impurities incorporated in the diamond crystal during the CVD growth of high-quality type-IIa samples, and offer promising perspectives in diamond-based photonics.
Abstract Diamond hosts a wide variety of colour centres that have demonstrated outstanding optical and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most investigated owing to its superior characteristics, which promise the development of highly sophisticated quantum devices, in particular for sensing applications. Nevertheless, harnessing the potential of these centres mainly relies on the availability of high quality and purity diamond single crystals that need to be specially designed and engineered for this purpose. Plasma assisted chemical vapour deposition (CVD) has become a key enabling technology in this field of research. Nitrogen can indeed be directly doped in situ into a high crystalline quality diamond matrix in a controlled way, allowing the production of single isolated centres or ensembles that can potentially be integrated into a device. In this paper we will provide an overview of the requirements for synthesizing ‘quantum-grade’ diamond films using CVD. These include the reduction of impurities and surrounding spins that limit coherence times, the control of NV density in a wide range of concentrations as well as their spatial localization within the diamond. Enhancing the charge state and preferential orientation of the colour centres is also discussed. These improvements in material fabrication have contributed to positioning diamond as one of the most promising solid-state quantum systems and the first industrial applications in sensing are just starting to emerge.
Defects in diamond have evolved as unique object for their potential application for Optical imaging and Nano-photonics. High pressure high temperature (HPHT) grown type-Ib diamond particles were milled down to the size of ~ 80 nm and purified to remove iron & graphitic carbon impurities and irradiated with 35 KeV He+ ions to create vacancies in the diamond lattice. Vacancies diffuse close to substitutional nitrogen impurities of nano-diamond particles upon thermal treatment. Characteristic sharp emission of NV centers were observed at 575.5 nm and 637.9 nm corresponding to NV° and NV− charged states in addition to a broad emission in the range 550-750 nm. Structural and photo-physical behavior of these fluorescent diamonds was found to depend on the method of purification adopted. Samples purified through acid reflux were found suitable for bio-imaging applications while, sample purified through air oxidation shows properties desirable for Nano-photonic applications. Photon-correlation measurements of emission from individual diamond nanoparticles using Hanbury Brown and Twiss interferometer (HBT) shows anti-bunching curve with g2(t)= 0 confirming their suitability as single photon source. Such sources of indistinguishable photons are highly desirable for quantum computation and quantum optics applications.
We introduce a process for the fabrication of high-quality, spatially isolated nano-diamonds on iridium via microwave-plasma-assisted chemical vapour deposition (CVD) growth. We perform spectroscopy of single silicon-vacancy (SiV) centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV centres the brightest diamond-based single photon sources to date. We measure for the first time the fine structure of a single SiV centre, thus confirming the atomic composition of the investigated colour centres.
Here, we report the fabrication and characterization of single crystal diamond films on a two-inch wafer-scale containing three-dimensional layered structures of negatively charged nitrogen-vacancy color centers (NV−^{-}−). The (100)-oriented layered diamond films were grown by chemical vapor deposition (CVD) to create spatially separated regions of enhanced emission associated with NV−^{-}− centers. Such localized emission enhancement as well as 2D and 3D arrays of spins could enable close-packed architectures for emerging quantum devices, such as data processors, memory cells, and magnetic sensors. A cyclic sequence of CVD growth and oxygen-plasma etching is employed, resulting in the in-situ formation of layered inverted pyramidal structures with flat $\{111111111\}$ sidewalls. These pits are subsequently overgrown by nitrogen-doped diamond to achieve NV−^{-}−-rich facets with a uniform N-V bond arrangement and improved nitrogen incorporation efficiency.
For applications in Quantum Information and Quantum Key Distribution an on-demand source of single photons is desirable because absolute security is of utmost importance. Photons are quantum systems; hence encoding information onto them offers a secure alternative to classical cryptography as a measurement cannot be performed on photons without altering their properties. The Nitrogen Vacancy (NV) centre in diamond is a good source of such photons. It is photo-stable and its location in diamond offers robustness. It has zero phonon line at 637 nm and its relative short luminescence life-time of about 12 ns makes it suitable for generating single photons. This thesis covers two aspects: Firstly the characterization of defects in diamonds and subsequent selection of diamonds suitable for use in the single photon setup and secondly, the development of the experimental setup for single photon generation. This thesis sets out to describe the development of a laboratory based single photon source using the NV centre in diamond. For this purpose a suite of diamond samples were selected and subjected to various spectroscopic tests in order to characterize and classify the samples, especially the presence of the NV centres and their concentrations. The characterization of the defects was done through the use of the following spectroscopic techniques: UltravioletVisible-Near infrared spectroscopy, Infrared spectroscopy, Electron Spin Resonance and Photoluminescence. These techniques enabled us to understand the types and origins of crystal defects that were present in the diamond samples used in this study and to use this to select diamonds that are most suitable for use in generation of single photons. The experimental setup for single photon generation using the NV centre is based on a confocal microscope arrangement. Single NV centres were identified by measuring the second order autocorrelation function of the fluorescence light emitted by the sample when illuminated with a laser. This measurement was done using a Hanbury-Brown Twiss (HBT) interferometer.