arXiv:cond-mat/0405346 · Physics Letters A

Combined effects of disorders and electron–electron interactions upon metal–insulator transition in 2D nonbipartite lattice

Jiaxiang Wang, Sabre Kais

Published Sep 1, 2003• 2 citations

arXiv HTML PDF

DOI: 10.1016/j.physleta.2003.08.002

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arXiv:cond-mat/0405346 · Physics Letters A

Combined effects of disorders and electron–electron interactions upon metal–insulator transition in 2D nonbipartite lattice

Jiaxiang Wang, Sabre Kais

Published Sep 1, 2003• 2 citations

arXiv HTML PDF

DOI: 10.1016/j.physleta.2003.08.002

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Chapter 2 Metal-Insulator Transition in a Strongly Correlated Two-Dimensional Electron System

A. A. Shashkin, S. V. Kravchenko

This chapter focuses on experimental results obtained in low-disordered strongly interacting two-dimensional (2D) electron systems; in particular in (100)-silicon metal-oxide-semiconductor field-effect transistors (MOSFET). It describes the additional confirmation in favor of zero-temperature zero-field metal-insulator transition is provided by magnetic and thermopower measurements. The chapter argues that the metal-insulator transition in silicon samples with very low level of disorder is driven by interactions. In a low-disordered 2D electron system in silicon MOSFETs, the resistivity at a certain "critical" electron density shows virtually no temperature dependence over a wide range of temperatures. In 2000, it was experimentally found that the ratio between the spin and the cyclotron splittings in silicon MOSFETs strongly increases at low electron densities. The strong enhancement of the spin susceptibility has indicated that at low electron densities, the system behaves well beyond the weakly interacting Fermi liquid.This chapter focuses on experimental results obtained in low-disordered strongly interacting two-dimensional (2D) electron systems; in particular in (100)-silicon metal-oxide-semiconductor field-effect transistors (MOSFET). It describes the additional confirmation in favor of zero-temperature zero-field metal-insulator transition is provided by magnetic and thermopower measurements. The chapter argues that the metal-insulator transition in silicon samples with very low level of disorder is driven by interactions. In a low-disordered 2D electron system in silicon MOSFETs, the resistivity at a certain "critical" electron density shows virtually no temperature dependence over a wide range of temperatures. In 2000, it was experimentally found that the ratio between the spin and the cyclotron splittings in silicon MOSFETs strongly increases at low electron densities. The strong enhancement of the spin susceptibility has indicated that at low electron densities, the system behaves well beyond the weakly interacting Fermi liquid.

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We study the effects of electron-electron interactions in disordered metals in and close to two dimensions (2D). We consider physical situations in which localization effects are suppressed. The field-theoretical renormalization-group (RG) calculation performed recently by Finkelstein is interpreted and rederived in terms of perturbative results. Surprisingly, except for the density of states, the scaling behavior is independent of the interaction range. We further extend the model to several new universality classes. In the presence of a strong magnetic field the metal is unstable in 2D and undergoes a metal-insulator transition in $d=2+\ensuremath{\epsilon}$. The conductivity exponent, defined by $\ensuremath{\sigma}\ensuremath{\sim}{(n\ensuremath{-}{n}_{c})}^{\ensuremath{\mu}}$, is universal with $\ensuremath{\mu}=1+O(\ensuremath{\epsilon})$ but $N({E}_{F})$ depends not only on the range of the interaction but also on its strength for short-ranged interactions. In 2D the conductivity has a universal temperature dependence [$\ensuremath{\delta}\ensuremath{\sigma}(T)={\ensuremath{\sigma}}_{N}(2\ensuremath{-}2\mathrm{ln}2)\mathrm{ln}(T\ensuremath{\tau})$, ${\ensuremath{\sigma}}_{N}=\frac{{e}^{2}}{2{\ensuremath{\pi}}^{2}\ensuremath{\hbar}}$] if the interaction is Coulombic. If magnetic impurities (or strong spin-orbit scattering with a weak magnetic field) are present instead, the noninteracting fixed point is stable for short-ranged interactions ($\ensuremath{\mu}=\frac{1}{2}$). For the Coulomb interaction the interaction is relevant and drives a metal-insulator transition in $d=2+\ensuremath{\epsilon}$ with universal critical properties ($\ensuremath{\mu}=1$). In 2D the conductivity also has a universal temperature dependence [$\ensuremath{\delta}\ensuremath{\sigma}(T)={\ensuremath{\sigma}}_{N}\mathrm{ln}(T\ensuremath{\tau})$]. We also discuss the behavior of the dielectric constant on the insulator side and the frequency (temperature) dependence of the conductivity at criticality. Remarks are made on the relationship of the above to experiments.We study the effects of electron-electron interactions in disordered metals in and close to two dimensions (2D). We consider physical situations in which localization effects are suppressed. The field-theoretical renormalization-group (RG) calculation performed recently by Finkelstein is interpreted and rederived in terms of perturbative results. Surprisingly, except for the density of states, the scaling behavior is independent of the interaction range. We further extend the model to several new universality classes. In the presence of a strong magnetic field the metal is unstable in 2D and undergoes a metal-insulator transition in $d=2+\ensuremath{\epsilon}$. The conductivity exponent, defined by $\ensuremath{\sigma}\ensuremath{\sim}{(n\ensuremath{-}{n}_{c})}^{\ensuremath{\mu}}$, is universal with $\ensuremath{\mu}=1+O(\ensuremath{\epsilon})$ but $N({E}_{F})$ depends not only on the range of the interaction but also on its strength for short-ranged interactions. In 2D the conductivity has a universal temperature dependence [$\ensuremath{\delta}\ensuremath{\sigma}(T)={\ensuremath{\sigma}}_{N}(2\ensuremath{-}2\mathrm{ln}2)\mathrm{ln}(T\ensuremath{\tau})$, ${\ensuremath{\sigma}}_{N}=\frac{{e}^{2}}{2{\ensuremath{\pi}}^{2}\ensuremath{\hbar}}$] if the interaction is Coulombic. If magnetic impurities (or strong spin-orbit scattering with a weak magnetic field) are present instead, the noninteracting fixed point is stable for short-ranged interactions ($\ensuremath{\mu}=\frac{1}{2}$). For the Coulomb interaction the interaction is relevant and drives a metal-insulator transition in $d=2+\ensuremath{\epsilon}$ with universal critical properties ($\ensuremath{\mu}=1$). In 2D the conductivity also has a universal temperature dependence [$\ensuremath{\delta}\ensuremath{\sigma}(T)={\ensuremath{\sigma}}_{N}\mathrm{ln}(T\ensuremath{\tau})$]. We also discuss the behavior of the dielectric constant on the insulator side and the frequency (temperature) dependence of the conductivity at criticality. Remarks are made on the relationship of the above to experiments.

Physical review. B, Condensed matterJul 15, 1984382 citations

N({E}_{F})

depends not only on the range of the interaction but also on its strength for short-ranged interactions. In 2D the conductivity has a universal temperature dependence [$\ensuremath{\delta}\ensuremath{\sigma}(T)={\ensuremath{\sigma}}_{N}(2\ensuremath{-}2\mathrm{ln}2)\mathrm{ln}(T\ensuremath{\tau})$, ${\ensuremath{\sigma}}_{N}=\frac{{e}^{2}}{2{\ensuremath{\pi}}^{2}\ensuremath{\hbar}}$] if the interaction is Coulombic. If magnetic impurities (or strong spin-orbit scattering with a weak magnetic field) are present instead, the noninteracting fixed point is stable for short-ranged interactions ($\ensuremath{\mu}=\frac{1}{2}$). For the Coulomb interaction the interaction is relevant and drives a metal-insulator transition in $d=2+\ensuremath{\epsilon}$ with universal critical properties ($\ensuremath{\mu}=1$). In 2D the conductivity also has a universal temperature dependence [$\ensuremath{\delta}\ensuremath{\sigma}(T)={\ensuremath{\sigma}}_{N}\mathrm{ln}(T\ensuremath{\tau})$]. We also discuss the behavior of the dielectric constant on the insulator side and the frequency (temperature) dependence of the conductivity at criticality. Remarks are made on the relationship of the above to experiments.