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arXiv:cond-mat/0305396 · Physical Review Letters

High Temperature Gate Control of Quantum Well Spin Memory

O. Z. Karimov, G. H. John, Richard T. Harley, Wayne H. Lau, Michael E. Flatté, Mohamed Henini, R. Airey

Published Dec 10, 2003• 150 citations
arXivHTMLPDF

Abstract

Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to $80\text{ }\mathrm{k}\mathrm{V}\text{ }{\mathrm{c}\mathrm{m}}^{\ensuremath{-}1}$ at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below $20\text{ }\mathrm{k}\mathrm{V}\text{ }{\mathrm{c}\mathrm{m}}^{\ensuremath{-}1}$ reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.

DOI
10.1103/physrevlett.91.246601

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Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm\ensuremath−180\text{ }\mathrm{k}\mathrm{V}\text{ }{\mathrm{c}\mathrm{m}}^{\ensuremath{-}1}80 kV cm\ensuremath−1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below 20 kV cm\ensuremath−120\text{ }\mathrm{k}\mathrm{V}\text{ }{\mathrm{c}\mathrm{m}}^{\ensuremath{-}1}20 kV cm\ensuremath−1 reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.
Time-resolved excite-probe measurements were performed on GaAs multiple quantum wells to determine the spin relaxation time as a function of well width (L) at room temperature, and as a function of temperature in the range of 10 to 150 K. These studies suggest that the room temperature spin relaxation time follows an exponential well width dependence, indicating that at room temperature spin flip is dominated by a combination of the D'Yakonov-Perel and the Bir-Aronov-Pikus mechanisms. The low temperature results suggest that a different mechanism, the exchange interaction, is dominant at low temperatures.
The carrier spin dynamics in a nnn-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very different spectral dependencies, from which nonetheless consistent information on the spin dynamics can be obtained, in agreement with theoretical predictions. The mechanisms of long-lived spin coherence generation are discussed for the cases of trion and exciton resonant excitation. We demonstrate that carrier localization leads to a saturation of spin relaxation times at 45 ns for electrons below 4.5 K and at 2 ns for holes below 2.3 K. The underlying spin relaxation mechanisms are discussed.
Systematic investigation of the spin dephasing times in GaAs/(Al,Ga)As quantum wells and its depending on parameters like temperature, magnetic fields and doping will be shown in Chapter 3.In Chapter 4 are presented results of investigation of the nuclear spin systems in quantum well heterostructures.The chapter 5 presents the results of studying the carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum wells by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 mil-liKelvin.In Chapter 6 is devoted to experimental and theoretically studying of optical control of the spin coherence of quantum well electrons by short laser pulses with circular or linear polarization.For that purpose the coherent electron spin dynamics in a n-doped CdTe/(Cd,Mg)Te quantum well structure was measured by time-resolved pump-probe Kerr rotation, using resonant excitation of the negatively charged exciton (trion) state.on the eigenstates |s z ; ↑ and |s z ; ↓ yields the states themselves independent of time.Along the field axis (longitudinal direction) these quantum-mechanical spin states are thus stationary.Any loss of coherence is induced by coupling of those states with the environment.Applying the time-evolution operator on the spin states perpendicular
We use reflective probing of transient linear birefringence to study coherent exciton dynamics in GaAs quantum wells as a function of applied magnetic field at low temperatures. The results show the significance of exchange-enhanced exciton spin relaxation for dephasing at zero field. In applied field the signals show background-free quantum beating which gives the exciton g factor and field-dependent dephasing time. The latter is dominated by spin relaxation which shows for the first time the dramatic slowdown predicted in earlier work.
Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.