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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Spin memory in the n-doped GaAs/AlGaAs quantum wells

S. Yu. Verbin, Yu. P. Efimov, V. V. Petrov, I. V. Ignatĭev, Yu. K. Dolgikh, Sergei A. Eliseev, I. Ya. Gerlovin, V. V. Ovsyankin, Yasuaki Masumoto

Published Jun 5, 2002• 0 citations
Publisher

Abstract

The polarized luminescence spectra and kinetics of the GaAs quantum wells with excess free electrons are studied experimentally. Quantum beats between the exciton and electron spin sublevels, split by a magnetic field, are detected. The dynamics of the degree of polarization is found to contain a long component associated with slow relaxation of electron spins.

DOI
10.1117/12.514466

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The polarized luminescence spectra and kinetics of the GaAs quantum wells with excess free electrons are studied experimentally. Quantum beats between the exciton and electron spin sublevels, split by a magnetic field, are detected. The dynamics of the degree of polarization is found to contain a long component associated with slow relaxation of electron spins.
We use reflective probing of transient linear birefringence to study coherent exciton dynamics in GaAs quantum wells as a function of applied magnetic field at low temperatures. The results show the significance of exchange-enhanced exciton spin relaxation for dephasing at zero field. In applied field the signals show background-free quantum beating which gives the exciton g factor and field-dependent dephasing time. The latter is dominated by spin relaxation which shows for the first time the dramatic slowdown predicted in earlier work.
The excitation of electron spin polarization and coherence by picosecond light pulses and their dynamics in a wide remotely doped quantum well are studied theoretically and experimentally. Assuming that all electrons in the quantum well are localized, the theory considers the resonant interaction of light pulses with the four-level system formed by the electron spins of the ground state and the hole spins of the trion excited state. The theory describes the effects of spontaneous emission, a transverse magnetic field and hole spin relaxation on the dynamics detected by the Kerr rotation of a probe pulse. Time resolved Kerr rotation experiments were carried out on a remotely doped 14nm14\phantom{\rule{0.3em}{0ex}}\mathrm{nm}14nm GaAs quantum well in the frequency range of optical transitions to the heavy hole (HH) trion and to the light-hole (LH) trion degenerate with the HH exciton. The experiments on the resonant excitation of the HH trion show a very slow heavy hole spin relaxation and, consequently, a weak electron spin polarization after the trion relaxation. In contrast, the resonant excitation of the LH trion/HH exciton results in a fast hole spin relaxation that increases electron spin polarization.
Systematic investigation of the spin dephasing times in GaAs/(Al,Ga)As quantum wells and its depending on parameters like temperature, magnetic fields and doping will be shown in Chapter 3.In Chapter 4 are presented results of investigation of the nuclear spin systems in quantum well heterostructures.The chapter 5 presents the results of studying the carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum wells by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 mil-liKelvin.In Chapter 6 is devoted to experimental and theoretically studying of optical control of the spin coherence of quantum well electrons by short laser pulses with circular or linear polarization.For that purpose the coherent electron spin dynamics in a n-doped CdTe/(Cd,Mg)Te quantum well structure was measured by time-resolved pump-probe Kerr rotation, using resonant excitation of the negatively charged exciton (trion) state.on the eigenstates |s z ; ↑ and |s z ; ↓ yields the states themselves independent of time.Along the field axis (longitudinal direction) these quantum-mechanical spin states are thus stationary.Any loss of coherence is induced by coupling of those states with the environment.Applying the time-evolution operator on the spin states perpendicular
Carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas is studied by picosecond pump-probe Kerr rotation. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations: Electron spin beats decaying with the charged exciton radiative lifetime of 50 ps, and long-lived hole spin beats with dephasing times up to 650 ps, which decrease with increasing temperature, underlining the importance of hole localization. The mechanism of hole spin coherence generation is discussed.
The carrier spin dynamics in a nnn-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very different spectral dependencies, from which nonetheless consistent information on the spin dynamics can be obtained, in agreement with theoretical predictions. The mechanisms of long-lived spin coherence generation are discussed for the cases of trion and exciton resonant excitation. We demonstrate that carrier localization leads to a saturation of spin relaxation times at 45 ns for electrons below 4.5 K and at 2 ns for holes below 2.3 K. The underlying spin relaxation mechanisms are discussed.
Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell exciton in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circularly polarized light, the luminescence line of interwell excitons exhibits a significant narrowing and a drastic increase in the degree of circular polarization of photoluminescence with increasing exciton concentration. It is found that the radiative recombination rate significantly increases under these conditions. This phenomenon is observed at temperatures lower than the critical point and can be interpreted in terms of the collective behavior of interwell excitons.