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arXiv:cond-mat/0301376 · Physical review. B, Condensed matter

Minimal charge gap in the ionic Hubbard model

Krunoslav Požgajčić, Claudius Gros

Published Aug 14, 2003• 10 citations
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Abstract

We study the ionic Hubbard model at temperature $T=0$ within the mean-field approximation, and show that the charge gap does not close completely at the ionic-band insulator to antiferromagnetic insulator transition, contrary to previous expectations. Furthermore, we find an intermediate phase for on-site repulsions $U>{U}_{c}$ for different lattices, and calculate the phase diagram for the ionic Hubbard model with alternating U, corresponding to a Cu-O lattice.

DOI
10.1103/physrevb.68.085106

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We study the ionic Hubbard model at temperature T=0T=0T=0 within the mean-field approximation, and show that the charge gap does not close completely at the ionic-band insulator to antiferromagnetic insulator transition, contrary to previous expectations. Furthermore, we find an intermediate phase for on-site repulsions U>UcU>{U}_{c}U>Uc​ for different lattices, and calculate the phase diagram for the ionic Hubbard model with alternating U, corresponding to a Cu-O lattice.
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We obtain the quantum phase diagram of the ionic Hubbard model including electron-hole symmetric density-dependent hopping. The boundaries of the phases are determined by crossings of excited levels with particular discrete symmetries, which coincide with jumps of charge and spin Berry phases with a topological meaning. Reducing the magnitude of the hopping terms that do not change the total number of singly occupied sites with respect to the other one, the region of the phase diagram occupied by the fully gapped spontaneously dimerized insulator (which separates the band insulating and Mott insulating phases) is enlarged, particularly for small values of the alternating on-site energy. This result might be relevant for experiments in cold atoms in which topological charge pumping is observed when alternation in the hopping is included.
We investigate the ground-state phase diagram of the Hubbard model for the ${\mathrm{AB}}_{N\ensuremath{-}1}$ chain with filling 1∕N1∕N1∕N, where NNN is the number of atoms per unit cell. In the strong-coupling limit, a charge transition takes place from a band insulator (BI) to a correlated insulator for increasing on-site repulsion UUU and positive on-site energy difference $\ensuremath{\Delta}$ (energy at A sites lower than at B sites). In the weak-coupling limit, a bosonization analysis suggests that for N>2N>2N>2 the physics is qualitatively similar to the case N=2N=2N=2 which has already been studied: an intermediate phase emerges, which corresponds to a bond-ordered ferroelectric insulator (FI) with spontaneously broken inversion symmetry. We have determined the quantum phase diagram for the cases N=3N=3N=3 and N=4N=4N=4 from the crossings of energy levels of appropriate excited states, which correspond to jumps in the charge and spin Berry phases, and from the change of sign of the localization parameter zLc{z}_{L}^{c}zLc​. From these techniques we find that, quantitatively, the BI and FI phases are broader for N>2N>2N>2 than when N=2N=2N=2, in agreement with the bosonization analysis. Calculations of the Drude weight and zLc{z}_{L}^{c}zLc​ indicate that the system is insulating for all parameters, with the possible exception of the boundary between the BI and FI phases.
The ionic Hubbard model is investigated at half filling at zero temperature. We apply the cellular dynamical mean-field theory to the one-dimensional ionic Hubbard model to compute local quantities such as double occupancy and staggered charge density. Both quantities provide general transition behavior of the model from a band insulating phase to a Mott insulating phase. The renormalized band gap is introduced as an efficient order parameter for the transition from a band insulator. We also present the spectral properties of the ionic Hubbard model, which exhibit characteristic features for both weak and strong interactions.
We obtain the quantum phase diagram of the ionic Hubbard model including electron-hole symmetric density-dependent hopping. The boundaries of the phases are determined by crossing of excited levels with particular discrete symmetries, which coincide with jumps of charge and spin Berry phases with a topological meaning. Reducing the magnitude of the hopping terms that do not change the total number of singly occupied sites with respect to the other one, the region of the phase diagram occupied by the fully gapped spontaneously dimerized insulator (which separates the band insulating and Mott insulating phases) is enlarged, particularly for small values of the alternating on-site energy. This result might be relevant for experiments in cold atoms in which topological charge pumping is observed when alternation in the hopping is included.
A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott--Hubbard insulating phase is found at intermediate values of the one-body potential $\ensuremath{\Delta}$ with increasing the Coulomb interaction UUU. We obtain a critical region in which the metallic phase disappears and a coexistence phase between the band and the Mott insulating state sets in. Our results are consistent with those obtained at low dimensions, thus they provide a concrete description for the charge degrees of freedom of the ionic Hubbard model.