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arXiv:1111.1119 · Physical Review B

Phase transitions and spectral properties of the ionic Hubbard model in one dimension

Ara Go, Gun Sang Jeon

Published Nov 3, 2011• 16 citations
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Abstract

The ionic Hubbard model is investigated at half filling at zero temperature. We apply the cellular dynamical mean-field theory to the one-dimensional ionic Hubbard model to compute local quantities such as double occupancy and staggered charge density. Both quantities provide general transition behavior of the model from a band insulating phase to a Mott insulating phase. The renormalized band gap is introduced as an efficient order parameter for the transition from a band insulator. We also present the spectral properties of the ionic Hubbard model, which exhibit characteristic features for both weak and strong interactions.

DOI
10.1103/physrevb.84.195102

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The ionic Hubbard model is investigated at half filling at zero temperature. We apply the cellular dynamical mean-field theory to the one-dimensional ionic Hubbard model to compute local quantities such as double occupancy and staggered charge density. Both quantities provide general transition behavior of the model from a band insulating phase to a Mott insulating phase. The renormalized band gap is introduced as an efficient order parameter for the transition from a band insulator. We also present the spectral properties of the ionic Hubbard model, which exhibit characteristic features for both weak and strong interactions.
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We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential Delta, the so-called ionic Hubbard model, using cluster dynamical mean-field theory. We find that for large Coulomb repulsion, U >> Delta, the system is a Mott insulator (MI). For weak to intermediate values of Delta, on decreasing U, the Mott gap closes at a critical value Uc1(Delta) beyond which a correlated insulating phase with possible bond order is found. Further, this phase undergoes a first-order transition to a band insulator (BI) at Uc2(Delta) with a finite charge gap at the transition. For large Delta, there is a direct first-order transition from a MI to a BI with a single metallic point at the phase boundary.
Many-body problem on the honeycomb lattice systems have been the subject of considerable experimental and theoretical interest. Here we investigate the phase transitions of the ionic Hubbard model on the honeycomb lattice with an alternate ionic potential for the half filling and hole doping cases by means of cellular dynamical mean field theory combining with continue time quantum Monte Carlo as an impurity solver. At half filling, as the increase of the interaction at a fixed ionic potential, we find the single particle gap decreases firstly, reaches a minimum at a critical interaction Uc, then increases upturn. At Uc, there is a band insulator to Mott insulator transition accompanying with the presence of the antiferromagnetic order. Away from half filing, the system shows three phases for the different values of hole density and interaction, paramagnetic metal, antiferromagnetic metal and ferromagnetic metal. Further, we present the staggered particle number, the double occupancy, the staggered magnetization, the uniform magnetization and the single particle spectral properties, which exhibit characteristic features for those phases.
We investigate the ground-state phase diagram of the one-dimensional 'ionic' Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix renormalization group methods. We identify an insulator–insulator phase transition from a band to a correlated insulator with simultaneous charge and bond-charge order. The transition point is characterized by the vanishing of the optical excitation gap while simultaneously the charge and spin gaps remain finite and equal. Indications for a possible second transition into a Mott-insulator phase are discussed.
We investigate the neutral-to-ionic insulator-insulator transition in one-dimensional materials by treating a strong-coupling effective model based on the ionic Hubbard model using the density-matrix renormalization group and finite-size scaling. The effective model, formulated in a spin-one representation, contains a single parameter. We carry out an extensive finite-size scaling analysis of the relevant gaps and susceptibilities to characterize the two zero-temperature transitions. We find that the transition from the ionic band-insulating phase to an intermediate spontaneously dimerized phase is Ising, and the transition from the dimerized phase to the Mott-insulating phase is Kosterlitz-Thouless, in agreement with the field-theory-based predictions.
We investigate the effects of Coulomb disorder on the half-filled ionic Hubbard model within the framework of dynamical mean-field theory (DMFT), using the equation-of-motion method as the impurity solver, combined with typical medium theory (TMT). In contrast to conventional disordered Hubbard models, the ionic Hubbard model contains a staggered ionic potential that introduces additional competition between band-insulating and correlation-driven insulating tendencies. We analyze how this ionic potential modifies the electronic phases induced by Coulomb disorder through the arithmetic and geometric averages of the local density of states. In the absence of disorder, the system exhibits metallic (M), Mott-insulating (MI), and band-insulating (BI) phases. When Coulomb disorder is introduced, Anderson-insulating (AI) behavior and localized states (LS) inside the Mott gap are also observed. In particular, the LS regime appears between the metallic and Mott-insulating phases at small ionic potentials, whereas the AI regime develops for sufficiently large values of the Coulomb interaction and ionic potential. Our results show that the interplay between ionic potential, electron correlation, and disorder substantially influences the localization behavior and insulating characteristics of the ionic Hubbard model.