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arXiv:cond-mat/0301047 · Physics Letters A

Renormalized frequency shift of a Wannier exciton in a one-dimensional system

Yueh-Nan Chen, Der-San Chuu

Published Mar 5, 2004• 0 citations
arXivHTMLPDF
DOI
10.1016/j.physleta.2004.02.054

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Physical Review Letters•Aug 17, 1992•9 citations
Super-radiant decay rate and frequency shift of a Wannier exciton in a one-dimensional quantum wire are studied. It is shown that the dark-mode exciton can be examined experimentally when the quantum wire is embedded in a planar microcavity. It is also found that the decay rate is greatly enhanced as the cavity length Lc{L}_{c}Lc​ is equal to the multiple wavelength of the emitted photon. Similar to its decay-rate counterpart, the frequency shift also shows discontinuities at resonant modes.
One-dimensional semiconductors are characterized by strongly bound excitons. Therefore, the Frenkel regime of excitons localized within a few unit cells is readily reached and traditional Wannier exciton models become inadequate. In the presence of strong electric fields, excitons are polarized and, in extreme cases, ionized. Such strong-field effects have previously been described analytically for Wannier excitons. In the present work, we show that analytical results can be extended to the more involved Frenkel case as well. Hence, by analytically solving the difference equation describing Frenkel excitons in electric fields, we derive close-form expressions for resonances providing Stark shifts and ionization rates. Moreover, closed-form results for exciton electroabsorption spectra and dynamic polarizability are obtained.
The radiative frequency shift of an exciton in a thin semiconductor film, like its radiative level width, is shown to be superradiatively enhanced. Unlike the latter, however, a finite frequency shift can only be obtained after proper renormalization for the correlated system. The shift is found to be inversely proportional to the square of the factor k0{\mathit{k}}_{0}k0​d and proportional to the film thickness T, k0{\mathit{k}}_{0}k0​=Eqn{\mathit{E}}_{\mathbf{q}\mathit{n}}Eqn​/\ensuremath{\Elzxh}c, Eqn{\mathit{E}}_{\mathbf{q}\mathit{n}}Eqn​ being the exciton energy gap and d the lattice constant of the semiconductor. Therefore, the coherent frequency shift can be observed experimentally if one varies the thickness, or the exciton energy gap Eqn{\mathit{E}}_{\mathbf{q}\mathit{n}}Eqn​ by imposing high pressure.