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arXiv:cond-mat/0201190 · Physical review. B, Condensed matter

Nonlinear optical response in two-dimensional Mott insulators

Makoto Takahashi, Takami Tohyama, Sadamichi Maekawa

Published Sep 11, 2002• 19 citations
arXivHTMLPDF

Abstract

We study the third-order nonlinear optical susceptibility ${\ensuremath{\chi}}^{(3)}$ and photoexcited states of two-dimensional (2D) Mott insulators by using an effective model in the strong-coupling limit of a half-filled Hubbard model. In the numerically exact diagonalization calculations on finite-size clusters, we find that the coupling of charge and spin degrees of freedom plays a crucial role in the distribution of the dipole-allowed states with odd parity and the dipole-forbidden states with even parity in the photoexcited states. This is in contrast with the photoexcited states in one dimension, where the charge and spin degrees of freedom are decoupled. In the third-harmonic generation (THG) spectrum, the main contribution is found to come from the process of three-photon resonance associated with the odd-parity states. As a result, the two-photon resonance process is less pronounced in the THG spectrum. The calculated THG spectrum is compared with recent experimental data. We also find that ${\ensuremath{\chi}}^{(3)}$ with a cross-polarized configuration of pump and probe photons shows spectral distributions similar to ${\ensuremath{\chi}}^{(3)}$ with a copolarized configuration, although the weight is small. These findings will help analyses of the experimental data of ${\ensuremath{\chi}}^{(3)}$ in 2D Mott insulators.

DOI
10.1103/physrevb.66.125102

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We investigate the resonant two-magnon Raman scattering in two-dimensional (2D) Mott insulators by using a half-filled 2D Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for small clusters, we find that the Raman intensity is enhanced when the incoming photon energy is not near the optical absorption edge but well above it, being consistent with experimental data. The absence of resonance near the gap edge is associated with the presence of background spins, while photoexcited states for resonance are found to be characterized by the charge degree of freedom. The resonance mechanism is different from those proposed previously.
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We examine the third-order non-linear optical response of a one-dimensional Mott insulator coupled with phonons. The Mott insulator is described by an extended Hubbard-Holstein model. The third harmonic generation (THG) of the model is calculated by dynamical density-matrix renormalization group. We find that the electron-phonon interaction enhances the intensity of THG if the on-site Coulomb interaction is comparable to the band width, but the enhancement is small for a realistic parameter value of a typical Mott insulator Sr2_22​CuO3_33​. The low-energy spin excitation does not contribute to the optical response if the electron-phonon coupling is neglected. We find that the THG spectrum can detect the spin excitations even for no electron-phonon coupling. The introduction of the electron-phonon coupling leads to a slight increase of low-energy weight in THG without peak structure through phonon-assisted spin excitation. To fully understand the phonon-assisted spin excitation, we additionally calculate the linear susceptibility of a doped Hubbard-Holstein model, showing a spectral distribution different from that at half filling.
We investigate the temperature dependence of optical absorption spectra of one-dimensional (1D) and two-dimensional (2D) Mott insulators by using an effective model in the strong-coupling limit of a half-filled Hubbard model. In the numerically exact diagonalization calculations on finite-size clusters, we find that in 1D the energy position of the absorption edge is almost independent of temperature, while in 2D the edge position shifts to lower energy with increasing temperature. The different temperature dependence between 1D and 2D is attributed to the difference of the coupling of the charge and spin degrees of freedom. The implications of the results on experiments are discussed in terms of the dimensionality dependence.
We theoretically investigate the light absorption spectrum of two-dimensional (2D) Mott insulators. We employ the numerical diagonalization method to calculate the light absorption spectrum with using the effective Hamiltonian for the extended Hubbard model, which is valid when the on-site Coulomb interaction energy UUU is much larger than the nearest-neighbor transfer integral ttt and the nearest-neighbor Coulomb interaction energy VVV. For V=0V=0V=0, the absorption spectrum consists of a broad band with a width of about 16t16t16t and a sharp central peak, and the energy eigenstates contributing to the absorption spectrum do not have the antiferromagnetic (AF) spin order, when UUU is sufficiently larger than ttt. These features result from the spin-charge interplay inherent in the very strong correlation region where charge transfer term is dominant. With decreasing U∕tU∕tU∕t, the peak structure in absorption spectrum becomes unclear and some low energy eigenstates have the AF spin order, as a result of the spin-spin interaction term. For large V∕tV∕tV∕t, the dominant peak arises in the lower energy region of the spectrum. A large number of holon-doublon bound states, which have nearly the same charge but different spin structures, are responsible for this peak, in contrast to the conventional exciton state. This is also in contrast to the charge bound states in one-dimensional (1D) Mott insulators, where a single energy eigenstate dominates the optical transition moment as a result of the spin-charge separation. The essentially different absorption spectra between the 1D and 2D Mott insulators originate from the difference in the coupling between spin and charge degrees of freedom.
We theoretically investigate the dynamics of insulator-metal transition induced by light-pulse excitation in one-dimensional (1D) and two-dimensional (2D) Mott insulators. We adopt the Pariser-Parr-Pople model, and pump-probe signal is obtained by numerically calculating the time development of the state excited by a light pulse. In the 1D case, when photoexcitation density is below about 10%, an extremely small portion of the energy eigenstates dominates the optical process, and the spin-charge separation holds in these dominant energy eigenstates. As a result, the Mott gap and the short-range antiferromagnetic (AF) spin order are preserved, and the spin relaxation does not occur. When the density is above the value, a metallic state without the Mott gap is photogenerated, and the magnitude of the short-range AF spin order is significantly reduced by photoexcitation. This is consistent with the experimentally observed photoinduced Mott transition. Furthermore, the spin relaxation occurs in the metallic state. This photoinduced Mott transition is a manifestation of the spin-charge coupling in the intensely photoexcited states. In the 2D case, the spin and the charge degrees of freedom are coupled even in the weakly photoexcited states, and the characteristic crossover associated with the excitation density is not observed.