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arXiv:cond-mat/0006335 · Physical review. B, Condensed matter

Nonlinear optical response and spin-charge separation in one-dimensional Mott insulators

Y. Mizuno, K. Tsutsui, Takami Tohyama, Sadamichi Maekawa

Published Aug 15, 2000• 109 citations
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Abstract

We theoretically study the nonlinear optical response and photoexcited states of the Mott insulators. The nonlinear optical susceptibility ${\ensuremath{\chi}}^{(3)}$ is calculated by using the exact diagonalization technique on small clusters. From the systematic study of the dependence of ${\ensuremath{\chi}}^{(3)}$ on dimensionality, we find that the spin-charge separation plays a crucial role in enhancing ${\ensuremath{\chi}}^{(3)}$ in the one-dimensional (1D) Mott insulators. Based on this result, we propose a holon-doublon model, which describes the nonlinear response in the 1D Mott insulators. These findings show that the spin-charge separation will become a key concept of optoelectronic devices.

DOI
10.1103/physrevb.62.r4769

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We theoretically study the nonlinear optical response and photoexcited states of the Mott insulators. The nonlinear optical susceptibility \ensuremathχ(3){\ensuremath{\chi}}^{(3)}\ensuremathχ(3) is calculated by using the exact diagonalization technique on small clusters. From the systematic study of the dependence of \ensuremathχ(3){\ensuremath{\chi}}^{(3)}\ensuremathχ(3) on dimensionality, we find that the spin-charge separation plays a crucial role in enhancing \ensuremathχ(3){\ensuremath{\chi}}^{(3)}\ensuremathχ(3) in the one-dimensional (1D) Mott insulators. Based on this result, we propose a holon-doublon model, which describes the nonlinear response in the 1D Mott insulators. These findings show that the spin-charge separation will become a key concept of optoelectronic devices.
We study the third-order nonlinear optical susceptibility ${\ensuremath{\chi}}^{(3)}$ and photoexcited states of two-dimensional (2D) Mott insulators by using an effective model in the strong-coupling limit of a half-filled Hubbard model. In the numerically exact diagonalization calculations on finite-size clusters, we find that the coupling of charge and spin degrees of freedom plays a crucial role in the distribution of the dipole-allowed states with odd parity and the dipole-forbidden states with even parity in the photoexcited states. This is in contrast with the photoexcited states in one dimension, where the charge and spin degrees of freedom are decoupled. In the third-harmonic generation (THG) spectrum, the main contribution is found to come from the process of three-photon resonance associated with the odd-parity states. As a result, the two-photon resonance process is less pronounced in the THG spectrum. The calculated THG spectrum is compared with recent experimental data. We also find that ${\ensuremath{\chi}}^{(3)}$ with a cross-polarized configuration of pump and probe photons shows spectral distributions similar to ${\ensuremath{\chi}}^{(3)}$ with a copolarized configuration, although the weight is small. These findings will help analyses of the experimental data of ${\ensuremath{\chi}}^{(3)}$ in 2D Mott insulators.
We applied a many-body Wannier functions method to theoretically calculate the excitonic optical conductivity spectrum and energy structure in a one-dimensional (1D) Mott insulator at absolute zero temperature with a large system size. Focusing on full charge fluctuations associated with holon and doublon pairs, we employ a charge model, which is interpreted as an effective model for investigating the photoexcitations of a 1D extended Hubbard model under a half-filling of the spin-charge separation. As a result, theoretical spectra with the appropriate broadenings qualitatively reproduce the recent experimental data of ET-F2TCNQ{\mathrm{F}}_{2}\mathrm{TCNQ}F2​TCNQ at 294 K with and without a modulated electric field. Regarding the excitonic energy structure, we found that the excitons, particularly for even-parity, are weakly bound by many-body effects. This is also consistent with the fitting parameters reported in a recent experiment. Thus, the theoretical method presented in this paper is useful for understanding the physical roles of the charge fluctuations in many-body excited states of a 1D Mott insulator.
We theoretically investigate the light absorption spectrum of two-dimensional (2D) Mott insulators. We employ the numerical diagonalization method to calculate the light absorption spectrum with using the effective Hamiltonian for the extended Hubbard model, which is valid when the on-site Coulomb interaction energy UUU is much larger than the nearest-neighbor transfer integral ttt and the nearest-neighbor Coulomb interaction energy VVV. For V=0V=0V=0, the absorption spectrum consists of a broad band with a width of about 16t16t16t and a sharp central peak, and the energy eigenstates contributing to the absorption spectrum do not have the antiferromagnetic (AF) spin order, when UUU is sufficiently larger than ttt. These features result from the spin-charge interplay inherent in the very strong correlation region where charge transfer term is dominant. With decreasing U∕tU∕tU∕t, the peak structure in absorption spectrum becomes unclear and some low energy eigenstates have the AF spin order, as a result of the spin-spin interaction term. For large V∕tV∕tV∕t, the dominant peak arises in the lower energy region of the spectrum. A large number of holon-doublon bound states, which have nearly the same charge but different spin structures, are responsible for this peak, in contrast to the conventional exciton state. This is also in contrast to the charge bound states in one-dimensional (1D) Mott insulators, where a single energy eigenstate dominates the optical transition moment as a result of the spin-charge separation. The essentially different absorption spectra between the 1D and 2D Mott insulators originate from the difference in the coupling between spin and charge degrees of freedom.
We theoretically investigate the dynamics of insulator-metal transition induced by light-pulse excitation in one-dimensional (1D) and two-dimensional (2D) Mott insulators. We adopt the Pariser-Parr-Pople model, and pump-probe signal is obtained by numerically calculating the time development of the state excited by a light pulse. In the 1D case, when photoexcitation density is below about 10%, an extremely small portion of the energy eigenstates dominates the optical process, and the spin-charge separation holds in these dominant energy eigenstates. As a result, the Mott gap and the short-range antiferromagnetic (AF) spin order are preserved, and the spin relaxation does not occur. When the density is above the value, a metallic state without the Mott gap is photogenerated, and the magnitude of the short-range AF spin order is significantly reduced by photoexcitation. This is consistent with the experimentally observed photoinduced Mott transition. Furthermore, the spin relaxation occurs in the metallic state. This photoinduced Mott transition is a manifestation of the spin-charge coupling in the intensely photoexcited states. In the 2D case, the spin and the charge degrees of freedom are coupled even in the weakly photoexcited states, and the characteristic crossover associated with the excitation density is not observed.
We theoretically study photoemission spectra for photodoped one-dimensional Mott insulators that can host excitons, and show that their spectral characteristics differ qualitatively from those of photodoped semiconductors. In conventional semiconductors, photoemission spectra are well understood; free charge carriers generate spectral weight near the bottom of the conduction band, while the formation of excitons leads to replica features of the valence band appearing inside the band gap. In one-dimensional Mott insulators, on the other hand, strong correlations give rise to fractionalized elementary excitations-spinons, holons, and doublons-which fundamentally modify the photoemission response. We find that when photodoped carriers, i.e., doublons and holons, remain unbound, the photoemission spectrum directly reflects the dispersion of spinons, i.e., magnetic elementary excitations. In contrast, when a doublon and a holon form an excitonic bound state, replica structures of the lower Hubbard band emerge inside the Mott gap, carrying contributions from both spinon and holon excitations. Importantly, the distribution of the in-gap signal depends sensitively on the degree of doublon-holon binding. The origin of these spectral features is clarified through a combination of exact diagonalization and the slave-particle approach. These results indicate that photoemission from photoinduced carriers and excitons in strongly correlated electron systems can provide information on magnetic properties and carrier-binding properties.
Nonlinear response of a Mott insulator to external electric field, corresponding to dielectric breakdown phenomenon, is studied within of a one-dimensional half-filled Hubbard model. It is shown that in the limit of nearly spin-polarized insulator the decay rate of the ground state into excited holon-doublon pair can be evaluated numerically as well to high accuracy analytically. Results show that the threshold field depends on the charge gap as F(th)∝Δ(3/2). Numerical results on small systems indicate on the persistence of a similar mechanism for the breakdown for decreasing magnetization down to unpolarized system.