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arXiv:cond-mat/0110234 · Applied Physics Letters

Three-dimensional arrays of BiSrCaCuO-2212 intrinsic Josephson junctions and zero-crossing Shapiro steps at 760 GHz

H. B. Wang, Peiheng Wu, J. Chen, K. Maeda, Takashi Yamashita

Published Mar 4, 2002• 33 citations
arXivHTMLPDF

Abstract

On a slice of 200–300-nm-thick Bi2Sr2CaCu2O8+x, stacks of intrinsic Josephson junctions are patterned, connected to each other, and integrated with a bow-tie antenna and some chokes. Over an area of 150 μm by 170 μm, we have been able to fabricate up to 256 stacks with over 11 000 junctions. Such three-dimensional arrays of intrinsic Josephson junctions respond sensitively to irradiation at 760 GHz from a far-infrared laser, showing clear zero-crossing Shapiro steps up to 0.75 V. In addition, possible applications in quantum voltage standards are discussed here. The high density of integration of the Josephson junctions is also promising for many other applications.

DOI
10.1063/1.1456555

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Journal of Applied Physics•Jul 15, 1997•17 citations
On a slice of 200–300-nm-thick Bi2Sr2CaCu2O8+x, stacks of intrinsic Josephson junctions are patterned, connected to each other, and integrated with a bow-tie antenna and some chokes. Over an area of 150 μm by 170 μm, we have been able to fabricate up to 256 stacks with over 11 000 junctions. Such three-dimensional arrays of intrinsic Josephson junctions respond sensitively to irradiation at 760 GHz from a far-infrared laser, showing clear zero-crossing Shapiro steps up to 0.75 V. In addition, possible applications in quantum voltage standards are discussed here. The high density of integration of the Josephson junctions is also promising for many other applications.
Using a newly developed double-side fabrication method, an IJJ stack plus a bow-tie antenna and chokes were integrated in a slice 200 nm thick and singled out from inside a bulk Bi2Sr2CaCu2O8+x (BSCCO) single crystal. The junctions in the fabricated stack were very uniform, and the number of junctions involved was rather controllable. In addition to this method, which can be used to fabricate integrated circuits based on intrinsic Josephson junctions in high temperature (Tc) superconductors, also reported will be terahertz responses of IJJs, and the possible applications in quantum voltage standard, spectroscopy, and so on.
SUMMARY In this paper, we review the progress in BiSrCaCuO-2212 Intrinsic Josephson junctions (IJJs) bysummarizing our recent results in fabrication and high frequencyexperiments. Using a double-side fabrication process, a well defined number of intrinsic Josephson junctions in a well defined geometrycan be fabricated. The junctions in the stack are quite homogeneous, and the power distribution of external irradiation among the junctions is even. Shapiro steps are clearlyobserved up to 2.5 THz, and the general condition for the occurrence of Shapiro steps at frequency f is that it should be much greater than the plasma frequency fpl. Under certain conditions the Shapiro steps are zero-crossing, making some applications possible, such as quantum voltage standard etc.
With a thin gold layer, we fabricated mesa-like shunted intrinsic Josephson junction stacks on Bi2Sr2CaCu2O8+x single crystals. Instead of the multibranch structure and large voltage jumps often observed in conventional intrinsic junctions, current–voltage characteristics typical of resistively shunted junctions were obtained. Individual Shapiro steps were clearly visible with irradiation at frequencies from a few to 20 GHz. The experiments demonstrated not only the ac Josephson effects directly but also the possibility of employing intrinsic Josephson junctions in high-frequency applications.
With annular intrinsic Josephson junctions structured from a slice of Bi2Sr2CaCu2O8+δ single crystal 200nm thick, we have devised a way to inject fluxons into the junctions only by sweeping the bias current. The stacks have shown typical properties concerning Josephson fluxon conservation. These annular junctions are sensitive to microwave irradiation, and quite sharp Shapiro steps have been observed at ∼20GHz which is much lower than the plasma frequency of the junctions, indicating many applications can be possible with practically accessible microwave sources.
We propose a new method for fabricating resistively shunted intrinsic Josephson junctions (RS-IJJs). Two mesas, measuring 6 × 6μm 2 and 100 × 100 μm 2 respectively in the a - b plane, have been fabricated in a Bi 2 Sr 2 CaCu 2 O 8+ x single crystal with a SiO layer evaporated in-between as an insulator. A gold stripe was sputtered onto the insulator to connect the mesas, thus effectively shunting the smaller one. The current–voltage ( I – V ) curves of such RS-IJJs have shown the typical behaviour of a resistively shunted junction with greatly reduced hysteresis and voltage jump. Under microwave irradiation at a 3 mm waveband, we have registered three types of Shapiro steps: conventional, sub-harmonic and zero-crossing. In this rapid communication, we discuss the fabrication details, as well as the observations of the Shapiro steps.