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arXiv:cond-mat/0103315 · The European Physical Journal B

Critical behaviour near the metal-insulator transition of a doped Mott insulator

Yūichi Ono, R. Bulla, Alex C. Hewson, Michael Potthoff

Published Aug 1, 2001• 22 citations
arXivHTMLPDF
DOI
10.1007/pl00011147

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The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping is calculated analytically as a function of the on-site Coulomb interaction UUU at the ddd-orbital and the charge-transfer energy ΔΔΔ between the ddd- and ppp-orbitals. Critical behaviour of the quasiparticle weight is also obtained analytically as a function of UUU and ΔΔΔ. The analytic results are in good agreement with the numerical results of the exact diagonalization method.
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping is calculated analytically as a function of the on-site Coulomb interaction UUU, and the charge-transfer energy ΔΔΔ between the ddd- and ppp-orbitals, transfer integrals tpdt_{pd}tpd​, tppt_{pp}tpp​, tddt_{dd}tdd​ between ppp-ddd, ppp-ppp and ddd-ddd sites respectively. The critical behaviour of the quasiparticle weight is also obtained analytically.