We consider the repulsive Hubbard model in one dimension and show the different mechanisms present in the charge and spin separation phenomena for an electron, at half filling and bellow half filling. We also comment recent experimental results.
The question of spin-charge separation in two-dimensional lattices has been addressed by numerical simulations of the motion of one hole in a half-filled band. The calculations have been performed on finite clusters with Hubbard and t-J models. By comparing the time evolution of spin and charge polarization currents in one and two dimensions, evidence in favor of spin-charge separation in two dimensions is presented. In contrast with this, spin-charge separation is absent in a highly doped, metallic, system.
The problem of spin-charge separation is addressed by considering current carrying states in a one-dimensional system of interacting electrons. Exact results for the Hubbard model and the bosonization method are exploited. We find that away from half filling both spin and charge excitations carry charge currents which are proportional to their momenta for most cases. Being in a qualitative agreement with the noninteracting ld Fermi gas picture, this result contradicts the spin-charge separation concept as it is usually derived e.g. from the bosonization approach or in a strong repulsion picture. For weak coupling the paradox is resolved by taking into account the Fermi velocity dispersion and by reexamining the structure of the current operator within the bosonization approach. For strong coupling we recover an effect of hale drag by a spinon as reflected in their momentum shifts.
The Hartree-Fock ground-state phase diagram of the one-dimensional Hubbard model is calculated in the μ−U plane, restricted to phases with no charge density modulation, extending the results presented in cond-mat/9511116. This allows antiferromagnetism, saturated ferromagnetism, spiral spin density waves and a collinear structure with unit cell ↑↑↓↓. The spiral phase is unstable against phase separation near quarter-, half- and three-quarter-filling. For large U this occurs at hole (or electron) doping of (3t/π2U)1/3 from half filling.