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arXiv:cond-mat/0010505 · Physical review. B, Condensed matter

Three-dimensional microelectromagnet traps for neutral and charged particles

Marija Drndić, C. S. Lee, Robert M. Westervelt

Published Feb 7, 2001• 15 citations
arXivHTMLPDF

Abstract

Three-dimensional (3D) microelectromagnets were developed to control particle motion in electromagnetic-field landscapes in vacuum near a chip. Multiple layers of micrometer-scale conductors separated by transparent insulators create particle containers with deep, symmetric, and time-dependent potentials, suitable for integration in quantum circuits. Single and coupled multiple 3D traps, integrated 3D traps with a mirror, 3D guides for neutral particles with spin, and traps for electrons in vacuum are described.

DOI
10.1103/physrevb.63.085321

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Three-dimensional (3D) microelectromagnets were developed to control particle motion in electromagnetic-field landscapes in vacuum near a chip. Multiple layers of micrometer-scale conductors separated by transparent insulators create particle containers with deep, symmetric, and time-dependent potentials, suitable for integration in quantum circuits. Single and coupled multiple 3D traps, integrated 3D traps with a mirror, 3D guides for neutral particles with spin, and traps for electrons in vacuum are described.
Abstract Ion traps are used for a wide range of applications from metrology to quantum simulations and quantum information processing. Microfabricated chip-based 3D ion traps are scalable to store many ions for the realization of a large number of qubits, provide deep trapping potentials compared to surface traps, and very good shielding from external electric fields. In this work, we give an overview of our recent developments on chip-based 3D ion traps. Different types of chip materials, the integration of electronic filter components on-chip and compact electrical connections in vacuum are discussed. Further, based on finite element method simulations, we discuss how integrating micro-optics in 3D ion traps is possible without disturbing the trapped ions.
We report on the experimental realisation of traps and guides for neutral atoms on a nanofabricated chip. Our main results are: (a) Trap parameters with a transverse ground state size below 100 nm and frequencies of above 100 kHz (as required by QIP proposals) have been achieved. (b) We could trap and guide atoms exclusively with the fields created on the chip. (c) We have shown that a wide variety of magnetic potentials may be realised, such as quadrupole fields for a MOT, 3D minima for trapping, 2D minima for guiding, and beam splitters. (d) It has been shown that standard nanofabrication techniques and materials may he utilised to build these atom chips. The wires on the surface can stand sufficiently high current densities in vacuum and at room temperature.
Several techniques for manipulating neutral atoms (more precisely, ultracold clouds of neutral atoms) in chip-based magnetic traps and atomic waveguides have been demonstrated. Such traps and waveguides are promising components of future quantum sensors that would offer sensitivities much greater than those of conventional sensors. Potential applications include gyroscopy and basic research in physical phenomena that involve gravitational and/or electromagnetic fields. The developed techniques make it possible to control atoms with greater versatility and dexterity than were previously possible and, hence, can be expected to contribute to the value of chip-based magnetic traps and atomic waveguides. The basic principle of these techniques is to control gradient magnetic fields with suitable timing so as to alter a trap to exert position-, velocity-, and/or time-dependent forces on atoms in the trap to obtain desired effects. The trap magnetic fields are generated by controlled electric currents flowing in both macroscopic off-chip electromagnet coils and microscopic wires on the surface of the chip. The methods are best explained in terms of examples. Rather than simply allowing atoms to expand freely into an atomic waveguide, one can give them a controllable push by switching on an externally generated or a chip-based gradient magnetic field. This push can increase the speed of the atoms, typically from about 5 to about 20 cm/s. Applying a non-linear magnetic-field gradient exerts different forces on atoms in different positions a phenomenon that one can exploit by introducing a delay between releasing atoms into the waveguide and turning on the magnetic field.
Summary form only given. We report on the experimental realisation of traps and guides for neutral atoms on a nanofabricated chip. Our main results are: (a) Trap parameters with a transverse ground state size below 100 nm and frequencies of above 100 kHz (as required by QIP proposals) have been achieved. (b) We could trap and guide atoms exclusively with the fields created on the chip. (c) We have shown that a wide variety of magnetic potentials may be realised, such as quadrupole fields for a MOT, 3D minima for trapping, 2D minima for guiding, and beam splitters. (d) It has been shown that standard nanofabrication techniques and materials may he utilised to build these atom chips. The wires on the surface can stand sufficiently high current densities in vacuum and at room temperature.
A microtrap consisting of two concentric circular wire loops having radii of 300 and 660 μm, respectively, is demonstrated. The three-dimensional trap has a maximum depth of more than 1 mK, and the trap center position as measured below the atom chip surface can be adjusted by applying a small-bias magnetic field. More than 105 Rb87 atoms were transferred into the microtrap from a magneto-optical trap and remained trapped for several hundred milliseconds, which is limited by the background pressure. The loading of a linear array of three microtraps is also demonstrated. The trap dimensions are readily scaled to micrometer size, which is of interest for creating a one- and two-dimensional array of neutral atom traps on a single atom chip.
A microtrap consisting of two concentric circular wire loops having radii of 300 and 660 μm, respectively, is demonstrated. The three-dimensional trap has a maximum depth of more than 1 mK, and the trap center position as measured below the atom chip surface can be adjusted by applying a small-bias magnetic field. More than 105 Rb87 atoms were transferred into the microtrap from a magneto-optical trap and remained trapped for several hundred milliseconds, which is limited by the background pressure. The loading of a linear array of three microtraps is also demonstrated. The trap dimensions are readily scaled to micrometer size, which is of interest for creating a one- and two-dimensional array of neutral atom traps on a single atom chip.