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arXiv:cond-mat/0001450 · Journal of the Physical Society of Japan

Correlation Effects in a One-Dimensional Quarter-Filled Electron System with Repulsive Interactions

Hideo Yoshioka, Masahisa Tsuchiizu, Yoshikazu Suzumura

Published Mar 15, 2000• 42 citations
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Abstract

A one-dimensional electron system at quarter-filling has been examined by applying the renormalization group method to a bosonized model with on-site (U) and nearest-neighbor (V) repulsive interactions. By evaluating both normal scattering and Umklapp scattering perturbatively, we obtain a phase diagram in which a metallic state with a 2k_F spin density wave (k_F is the Fermi wave number) moves into an insulating state with charge disproportionation of a 4k_F charge density wave with an increase in both U and V. The effect of the next-nearest-neighbor repulsion is also discussed.

DOI
10.1143/jpsj.69.651

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A one-dimensional electron system at quarter-filling has been examined by applying the renormalization group method to a bosonized model with on-site (U) and nearest-neighbor (V) repulsive interactions. By evaluating both normal scattering and Umklapp scattering perturbatively, we obtain a phase diagram in which a metallic state with a 2k_F spin density wave (k_F is the Fermi wave number) moves into an insulating state with charge disproportionation of a 4k_F charge density wave with an increase in both U and V. The effect of the next-nearest-neighbor repulsion is also discussed.
We examine effects of the next-nearest-neighbor repulsion on electronic states of a one-dimensional interacting electron system which consists of quarter-filled band and interactions of on-site and nearest-neighbor repulsion. We derive the effective Hamiltonian for the electrons around wave number $\pm \kf$ ($\kf$: Fermi wave number) and apply the renormalization group method to the bosonized Hamiltonian. It is shown that the next-nearest-neighbor repulsion makes $4\kf$-charge ordering unstable and suppresses the spin fluctuation. Further the excitation gaps and spin susceptibility are also evaluated.
The interplay between quarter-filled and half-filled umklapp scattering has been examined by applying the renormalization group method to a one-dimensional quarter-filled electron system with dimerization, on-site (U) and nearest-neighbor (V) repulsive interactions. The phase diagram on the U-V plane is obtained at absolute zero temperature where the Mott insulator (the charge ordered insulator) is found for smaller (larger) V. By choosing the moderate parameter in the region of Mott insulator, it is shown that the resistivity exhibits a crossover from behavior of quarter-filling to that of half-filling with decreasing temperature.
The one-dimensional antiferromagnetic correlated electron system described by the unusual t-U-J model with alternating on-site interactions at odd ([Formula: see text]) and even ([Formula: see text]) sites is studied analytically. At weak coupling, the use of bosonization and renormalization-group techniques helps to obtain ground-state phase diagram. At quarter filling, the unequal on-site repulsion ([Formula: see text]) causes the occurrence of umklapp processes and the generation of a charge excitation gap. Contrary to the usual case ([Formula: see text]), the system is not metallic but insulating. For [Formula: see text], the system is in a spin-gapped phase with charge-density-wave (CDW) instability; for [Formula: see text], the system is in a spin-gapless phase characterized by the coexistence of both CDW and spin-density-wave (SDW) instabilities, where the SDW correlation dominates over the CDW one.
The ground-state properties of a 1D modified Penson–Kolb–Hubbard model characterized by alternating Hubbard interaction at odd and even sites are discussed by the bosonization scheme and the renormalization group analysis. At quarter filling, the quantum phase diagram consists of the charge-density-wave, spin-density-wave and singlet-superconductivity instabilities. The insulating phases come from the relevant umklapp process induced by the unequal on-site repulsion. The results provide a further understanding of occurrence of the umklapp process in 1D correlated electron systems.
Using the field-theory approach combining bosonization and renormalization group, we investigate the weak-coupling phase diagram of the unconventional Hubbard chain, where in addition to a bond–charge interaction ( X ), the Hubbard interaction differs between odd ( U o ) and even ( U e ) sites. The result shows that at quarter filling, the unequal Hubbard repulsion has a great influence on low-energy charge excitations. For the attractive X , the umklapp scattering always exists, and the ground state only exhibits a spin-gapless insulating phase with dominant spin-density-wave correlations. For the repulsive X , the umklapp processes only take place if both U o and U e are greater than 8 X cos ( π / 4 ) , and the phase diagram consists of three phases, a metallic phase with the spin-gapped singlet superconducting correlation, and two insulating phases characterized by the spin-density-wave and charge-density-wave correlations. We also present the phase diagram of the standard t - U - X chain in the case of non-half filling. • We study the 1D modified t-U-X model with unequal on-site interaction. • The different on-site repulsion induces relevant umklapp process at quarter filling. • The study supplements understanding of quantum properties of 1D correlated systems.
We reexamine the ground-state phase diagram of the one-dimensional half-filled Hubbard model with on-site and nearest-neighbor repulsive interactions. We calculate second-order corrections to coupling constants in the weak-coupling renormalization-group approach ( g-ology) to show that the bond-charge-density-wave (BCDW) phase exists for weak couplings in between the charge-density-wave (CDW) and spin-density-wave (SDW) phases. We find that the umklapp scattering of parallel-spin electrons destabilizes the BCDW state and gives rise to a bicritical point where the CDW-BCDW and SDW-BCDW continuous-transition lines merge into the CDW-SDW first-order transition line.