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Niobiumnitride tunnel junctions as frequency mixer

B. Plathner, Hermann Rothermel, Minoru Aoyagi

Published Jan 1, 1993• 1 citation
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This letter reports a low noise submillimeter-wave mixer using NbN tunnel junctions integrated in Nb matching circuits. The double side band receiver noise temperature was 245 K at 345 GHz. Plasma conditions for NbN film deposition on quartz substrates at room temperature are created by using a second Nb target as a selective nitrogen pump. Electrodes for tunnel junctions with critical temperatures above 15 K and normal state resistivities in the range from 130 to 160 μΩ cm were obtained. This permits integrating NbN junctions into normal metal or non-NbN superconducting matching circuits, which is of great interest for THz mixers.

Applied Physics Letters•Dec 23, 1996•8 citations

ADVANCES IN HIGH FREQUENCY APPLICATIONS OF SUPERCONDUCTING TUNNEL JUNCTIONS

S. Rudner, T. Claeson

De Gruyter eBooks•Dec 31, 1986•2 citations
This letter reports a low noise submillimeter-wave mixer using NbN tunnel junctions integrated in Nb matching circuits. The double side band receiver noise temperature was 245 K at 345 GHz. Plasma conditions for NbN film deposition on quartz substrates at room temperature are created by using a second Nb target as a selective nitrogen pump. Electrodes for tunnel junctions with critical temperatures above 15 K and normal state resistivities in the range from 130 to 160 μΩ cm were obtained. This permits integrating NbN junctions into normal metal or non-NbN superconducting matching circuits, which is of great interest for THz mixers.