Measurements of macroscopic quantum tunnelling (MQT) in intrinsic Josephson junctions (IJJs) suggest that they may be suitable as qubits. An advantage of using IJJs over trilayers is the absence of any artificial barrier and hence the possible absence of decohering two-level fluctuators. A disadvantage is that it is difficult to fabricate single IJJs. Hence all IJJ MQT experiments have been carried out on arrays of many IJJs in series. Since MQT is suppressed by dissipation, it is important (a) to understand the role of dissipation on the dynamics of IJJs and (b) to consider how the dissipation and the dynamics change as a function of the number of junctions in the array which are in the voltage state. We have measured distributions of the nth-order switching current in TlBaCaCuO IJJ arrays, where n indicates switching from n to n+1 junctions being in the voltage state. The junctions show conventional underdamped behaviour at temperatures below some temperature T*, with a suppression of the width of the distribution above T*. We find that T* depends upon n. For n = 0 (i.e. switching from the supercurrent branch), T* is less than 4.2 K. For n > 0, we measured T* values between 20 K and 40 K. Calculations and simulations show that a change in T* results from a change in Q. Analysis suggests that the Q of the IJJs is determined by the environmental impedance when all junctions in the array are in the zero-voltage state, whereas having one junction or more in the voltage state isolates the array from the environment leading to a higher Q. We discuss our data in the context of possible qubit applications.
Measurements of macroscopic quantum tunnelling (MQT) in intrinsic Josephson junctions (IJJs) suggest that they may be suitable as qubits. An advantage of using IJJs over trilayers is the absence of any artificial barrier and hence the possible absence of decohering two-level fluctuators. A disadvantage is that it is difficult to fabricate single IJJs. Hence all IJJ MQT experiments have been carried out on arrays of many IJJs in series. Since MQT is suppressed by dissipation, it is important (a) to understand the role of dissipation on the dynamics of IJJs and (b) to consider how the dissipation and the dynamics change as a function of the number of junctions in the array which are in the voltage state. We have measured distributions of the nth-order switching current in TlBaCaCuO IJJ arrays, where n indicates switching from n to n+1 junctions being in the voltage state. The junctions show conventional underdamped behaviour at temperatures below some temperature T*, with a suppression of the width of the distribution above T*. We find that T* depends upon n. For n = 0 (i.e. switching from the supercurrent branch), T* is less than 4.2 K. For n > 0, we measured T* values between 20 K and 40 K. Calculations and simulations show that a change in T* results from a change in Q. Analysis suggests that the Q of the IJJs is determined by the environmental impedance when all junctions in the array are in the zero-voltage state, whereas having one junction or more in the voltage state isolates the array from the environment leading to a higher Q. We discuss our data in the context of possible qubit applications.
We have studied the temperature dependence of escape phenomena in various underdamped Josephson junctions (JJs). The junctions had different Josephson coupling energies E J which were relatively small, but larger than the charging energy E C . Upon increasing the temperature T , we first observe the usual cross-over between macroscopic quantum tunnelling and thermally activated (TA) behaviour at temperatures k B T ∼ ℏω p , where ω p is the plasma frequency of the junction. Increasing T further, the width of the switching current distribution has, counterintuitively, a non-monotonic temperature dependence. This can be explained by the novel cross-over from TA behaviour to underdamped phase diffusion. We show that this cross-over is expected to occur at temperatures such that k B T ∼ E J (1 − 4/π Q ) 3 /2, where Q is the quality factor of the junction at the plasma frequency, in agreement with experiment. Our findings can be compared with detailed model calculations which take into account dissipation and level quantization in a metastable well. Particular attention is paid to the sample with the smallest E J , which shows extensive phase diffusion even at the lowest temperatures. This sample consists of a dc-SQUID and a single JJ close to each other, such that the SQUID acts as a tunable inductive protection for the single junction from fluctuations of a dissipative environment. By varying the flux through the dc-SQUID, we present, for the first time, experimental evidence of the escape of a JJ from the phase diffusion regime to the free running state in a tunable environment. We also show that in the zero voltage state the losses mainly occur at frequencies near the plasma resonance.
Josephson junctions based on Nb/AlOx/Nb trilayer technology have demonstrated excellent quality, exhibiting very low dissipation in the subgap region. This property is very important for all those experiments which have to deal with the quantum behavior of macroscopic variables in Josephson devices. In view of performing an experiment of macroscopic quantum coherence with a Josephson device, we measured the escape temperature and the return current of several junctions fabricated with different processes and having different characteristics, by cooling them from 4.2 to 0.3 K. We show that, for what concerns the process of escape from the zero-voltage state, no difference can be found among different junctions. On the other hand, the dissipation properties are strongly influenced by the current density, with lower current density resulting in lower intrinsic dissipation.
We study the dynamics of multi-junction switching (MJS): several intrinsic Josephson junctions (IJJs) in an array switch to the finite voltage state simultaneously. The number of multi-switching junctions ( N ) was successfully tuned by changing the load resistance serially connected to an Bi 2 Sr 1.6 La 0.4 CuO 6+δ IJJ array. The independence of the escape rates of N in the macroscopic quantum tunneling regime indicates that MJS is a successive switching process rather than a collective process. The origin of MJS is explained by the gradient of a load curve and the relative magnitudes of the switching currents of quasiparticle branches in the current–voltage plane.
Intrinsic Josephson junctions (IJJs) in the high-Tc cuprate superconductors have several fascinating properties, which are superior to the usual Josephson junctions obtained from conventional superconductors with low Tc, as follows; (1) a very thin thickness of the superconducting layers, (2) a strong interaction between junctions since neighboring junctions are closely connected in an atomic scale, (3) a clean interface between the superconducting and insulating layers, realized in a single crystal with few disorders. These unique properties of IJJs can enlarge the applicable areas of the superconducting qubits, not only the increase of qubit-operation temperature but the novel application of qubits including the macroscopic quantum states with internal degree of freedom. I present a comprehensive review of the phase dynamics in current-biased IJJs and argue the challenges of superconducting qubits utilizing IJJs.
The macroscopic quantum tunneling (MQT) in the current-biased intrinsic Josephson junctions (IJJs) of high- T c cuprates has attracted much attention for decades. Although the MQT for the phase switches from the zero to the first voltage state (1st SW) in the multiple-branched I-V curves is well explained by the conventional theory, the occurrence of MQT for the higher order switches such as the switch from the 1st to 2nd voltage state (2nd SW) has been still debated. Here, we present an experimental study on the phase switches of small IJJs fabricated from underdoped Bi 2 Sr 2 (Ca,Y)Cu 2 O y . We observed the single photon transition between quantized energy levels in the 3rd phase switches at 59.15 GHz and 2 K. The comparison with the previous studies on the nearly optimal-doped Bi 2 Sr 2 CaCu 2 O y clearly suggests a possibility that the MQT rate for the higher-order phase switches is commonly enhanced by the effective suppression of the energy barrier for the higher-order phase escape due to the phase-running state after the 1st SW, in spite of the large difference in a critical current density and T c .
The topic of the PhD project is a comparative study of phase dynamics and macroscopic quantum phenomena in moderately damped NbN, YBaCuO grain boundary (GB) Josephson junctions (JJs) and hybrid devices. This type of research activity responds to the needs of better identifying phase dynamics in JJs in the moderately damped regime, which is going to be more and more common in hybrid nanostructures. Issues on a more detailed understanding of coherence, dissipation and noise in the various devices have a relevant role in the progress of quantum circuits.
In the last few years, studies of phase dynamics and macroscopic quantum phenomena have been extended to junctions composed of materials other than the traditional low critical temperature superconductors (LTS) and to novel types of structures with unconventional barriers composed for instance of graphene sheets or of grain boundaries. Progress in engineering new materials into junctions and in understanding and controlling the physics of interfaces may offer novel solutions for junctions of superior quality and complementary functionalities, and therefore may lead in the long run to improve also specific qubit performances.
For LTS JJs, once the barrier thickness and the critical current density (Jc) have been fixed, a reduction in its size unavoidably leads to a lowering of the critical current and determines a quite different phase dynamics re-normalized to the new scaling energy. Lower critical currents Ic result in lower Josephson energies EJ, and higher levels of dissipation are expected. The range of the energy dynamical parameters is significantly enlarged, and it is technologically easier to reproducibly realize nontrivial configurations. These devices are characterized by intermediate levels of dissipation (moderately damped regime) and by phase diffusion phenomena. The low Jc limit seems to be characteristic also of all futuristic nanohybrids devices incorporating nanowires, and the moderately damped regime (MDR) is intrinsically more common than it could be expected.
Measurements of switching current distribution (SCD) in these last years have turned to be standard tools to investigate phase dynamics in unconventional and hybrid systems and nanostructures. High critical temperature superconductors (HTS) are an example of unconventional systems, because of the d-wave order parameter symmetry and of the presence of low-energy quasiparticles, which are expected to induce high level of dissipation and as a consequence to spoil macroscopic quantum coherence. A comparative study in systems so different and complementary is of great interest.
During the PhD program, we have performed measurements of SCD, both in the thermal and quantum regime down to 20 mK, on moderately damped NbN/MgO/NbN JJs and on YBCO biepitaxial GB JJs. The NbN JJs exhibit a crossover from thermal activation (TA) to macroscopic quantum tunneling (MQT) regime at about 90 mK. After the MQT saturation, the width of the SCD follows the expected dependence in the TA regime. Deviations are evident in proximity and above the crossover temperature T* (about 1.6K) where we find effects of anti-correlation between the bath temperature and thermal fluctuations since the width of the histograms starts to collapse, and indications of a transition to a third regime called phase diffusion (PD) are evident, such as the change of the switching distributions symmetry.
Experimental data have been analyzed through numerical fitting of the switching probability and Monte Carlo simulations, and we found a good agreement with theoretical expectations based on multiple re-trapping processes, which strongly depend on the junction damping. The combined analysis of these three regimes allowed us to extract the fundamental parameters, which completely characterize the dynamics of such moderately damped NbN JJs. In addition, clear signatures of the PD regime have been detected and numerical methods have been developed to estimate the dissipation level in the MDR.
As a term of comparison, the studies on moderately damped systems have been also carried out on HTS junctions, which have different levels of intrinsic dissipation induced by low energy quasi-particles, and are for this reason of great impact as a reference.
In such JJs we have clearly observed a direct transition from the MQT to the PD regime. The width of the SCDs is constant below 100mK, which is a clearly indication of a quantum activation regime. Above 100mK the negative temperature derivative of the width is consistent with a diffusive motion due to multiple escape and re-trapping in the potential wells. Thermal behavior of the width has been fitted through numerical simulations, thus providing the estimate of the damping factor. These conclusions of a PD regime also in YBaCuO JJs are supported by data in presence of an externally applied magnetic field, and are consistent with the numerical outcomes.
Numerical simulations of the thermal behavior of the SCD width for different values of the quality factor ranging from 1 to 10 have been carried out. Such numerical simulations allow us to reconstruct a (Q, kBT/EJ) phase diagram summarizing the various activation regimes. The transition curve between the PD regime and the running state following thermal or quantum activation has been determined numerically by varying the damping factor Q as function of the ratio between the thermal energy and the Josephson energy. The result of the calculation is a universal curve. A phase diagram valid in a large range of dissipation conditions emerges as a functional guide to classify the switching behavior and to settle the fundamental junction parameters and energies in the MDR. It is therefore a reference for phase dynamics of novel types of junction and system for which the nature of the current induced transition from the superconducting to the normal state has not been completely clarified.