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Springer proceedings in physics

Fabrication and Characterization of Arrays of GaAs All-Optical Logic Gates

Mial E. Warren, Y. H. Lee, Greg R. Olbright, Brian P. McGinnis, H. M. Gibbs, Nasser N. Peyghambarian, Thirumalai Venkatesan, B. Wilkens, J. S. Smith, Avigail Yariv

Published Jan 1, 1986• 1 citation
Publisher
DOI
10.1007/978-3-642-46580-2_12

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Optical logic elements, especially in the form of 2-D arrays, can possibly be applied to massively parallel signal processing. GaAs/AlGaAs multiple-quantum-well etralons have previously shown optical bistability1 and various types of logic-gate operation2 at room temperature. Most of these experiments have used a dye laser, which is large in size and expensive. One attractive feature of these devices is that a GaAs/AlGaAs diode laser can be used as a light source making the total system more practical. The present paper demonstrates a stable optical NOR gate using two diode lasers.
A nonlinear Fabry-Perot etalon fabricated entirely by molecular beam epitaxy (MBE) when operated as a pump-probe optical logic gate1 has shown 5:1 contrast with <20 pJ incident. The device should be especially well suited for optical bistability.2 However, this mode of operation has not yet been tried. The design consists of ten pairs of quarterwave thickness AlAs and GaAs layers grown on a GaAs substrate followed by a ~2-μm GaAs spacer layer and seven more quarterwave pairs. The mirrors formed by the quarter-wave stacks both have ~90% reflectivity. Fewer layers are needed on the second grown mirror due to the higher intrinsic reflectivity at the GaAs-air interface compared with that on the substrate side. The GaAs spacer was intentionally wedged to provide tunability of the transmission peak. The substrate in its present form is unsulted for transmitting either the pump or probe beams, so we used the reflected probe signal as the output.