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Optical conductivity of the half-filled Hubbard chain

No author provided

Published Sep 10, 2026• 0 citations
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Abstract

We combine well-controlled analytical and numerical methods to determine the optical conductivity of the one-dimensional Mott-Hubbard insulator at zero temperature. A dynamical density-matrix renormalization group method provides the entire absorption spectrum for all but very small coupling strengths. In this limit we calculate the conductivity analytically using exact field-theoretical methods. Above the Lieb-Wu gap the conductivity exhibits a characteristic square-root increase. For small to moderate interactions, a sharp maximum occurs just above the gap. For larger interactions, another weak feature becomes visible around the middle of the absorption band.

DOI
10.82444/warw.33522175

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•Sep 10, 2026•0 citations
We combine well-controlled analytical and numerical methods to determine the optical conductivity of the one-dimensional Mott-Hubbard insulator at zero temperature. A dynamical density-matrix renormalization group method provides the entire absorption spectrum for all but very small coupling strengths. In this limit we calculate the conductivity analytically using exact field-theoretical methods. Above the Lieb-Wu gap the conductivity exhibits a characteristic square-root increase. For small to moderate interactions, a sharp maximum occurs just above the gap. For larger interactions, another weak feature becomes visible around the middle of the absorption band.
We combine well-controlled analytical and numerical methods to determine the optical conductivity of the one-dimensional Mott-Hubbard insulator at zero temperature. A dynamical density-matrix renormalization group method provides the entire absorption spectrum for all but very small coupling strengths. In this limit we calculate the conductivity analytically using exact field-theoretical methods. Above the Lieb-Wu gap the conductivity exhibits a characteristic square-root increase. For small to moderate interactions, a sharp maximum occurs just above the gap. For larger interactions, another weak feature becomes visible around the middle of the absorption band.
We consider the optical conductivity ${\ensuremath{\sigma}}_{1}(\ensuremath{\omega})$ in the metallic phase of the one-dimensional Hubbard model. Our results focus on the vicinity of half filling and the frequency regime around the optical gap in the Mott insulating phase. By means of a density-matrix renormalization group implementation of the correction-vector approach, ${\ensuremath{\sigma}}_{1}(\ensuremath{\omega})$ is computed for a range of interaction strengths and dopings. We identify an energy scale Eopt{E}_{\mathrm{opt}}Eopt​ above which the optical conductivity shows a rapid increase. We then use a mobile impurity model in combination with exact results to determine the behavior of ${\ensuremath{\sigma}}_{1}(\ensuremath{\omega})$ for frequencies just above Eopt{E}_{\mathrm{opt}}Eopt​ which is in agreement with our numerical data. As a main result, we find that this onset behavior is not described by a power law.
We employ dynamical density-matrix renormalization-group (DDMRG) and field-theory methods to determine the frequency-dependent optical conductivity in one-dimensional extended, half-filled Hubbard models. The field-theory approach is applicable to the regime of ``small'' Mott gaps which is the most difficult to access by DDMRG. For very large Mott gaps the DDMRG recovers analytical results obtained previously by means of strong-coupling techniques. We focus on exciton formation at energies below the onset of the absorption continuum. As a consequence of spin-charge separation, these Mott-Hubbard excitons are bound states of spinless, charged excitations (``holon-antiholon'' pairs). We also determine exciton binding energies and sizes. In contrast to simple band insulators, we observe that excitons exist in the Mott-insulating phase only for a sufficiently strong intersite Coulomb repulsion. Furthermore, our results show that the exciton binding energy and size are not related in a simple way to the strength of the Coulomb interaction.
Applying newly developed dynamical density matrix renormalization group techniques at zero and finite temperatures to a Hubbard-Holstein model at half filling, we examine the optical conductivity of a typical one-dimensional Mott insulator Sr2CuO3{\text{Sr}}_{2}{\text{CuO}}_{3}Sr2​CuO3​. We find a set of parameters in the Hubbard-Holstein model, which can describe optical conductivity for both Mott-gap excitation in the high-energy region and phonon-assisted spin excitation in the low-energy region. We also find that electron-phonon interaction gives additional broadening in the temperature dependence of the Mott-gap excitation.
The density-matrix renormalization-group (DMRG) method is used to investigate optical excitations in the Mott insulating phase of a one-dimensional extended Hubbard model. The linear optical conductivity is calculated using the dynamical DMRG method and the nature of the lowest optically excited states is investigated using a symmetrized DMRG approach. The numerical calculations agree perfectly with field-theoretical predictions for a small Mott gap and analytical results for a large Mott gap obtained with a strong-coupling analysis. It is shown that four types of optical excitations exist in this Mott insulator: pairs of unbound charge excitations, excitons, excitonic strings, and charge-density-wave (CDW) droplets. Each type of excitation dominates the low-energy optical spectrum in some region of the interaction parameter space and corresponds to distinct spectral features: a continuum starting at the Mott gap (unbound charge excitations), a single peak or several isolated peaks below the Mott gap (excitons and excitonic strings, respectively), and a continuum below the Mott gap (CDW droplets).
We employ dynamical density-matrix renormalization-group (DDMRG) and field-theory methods to determine the frequency-dependent optical conductivity in one-dimensional extended. half-filled Hubbard models. The field-theory approach is applicable to the regime of "small" Mott gaps which is the most difficult to access by DDMRG. For very large Mott gaps the DDMRG recovers analytical results obtained previously by means of strong-coupling techniques. We focus on exciton formation at energies below the onset of the absorption continuum. As a consequence of spin-charge separation, these Mott-Hubbard excitons are bound states of spinless, charged excitations ("holon-antiholon" pairs). We also determine exciton binding energies and sizes. In contrast to simple band insulators, we observe that excitons exist in the Mott-insulating phase only for a sufficiently strong intersite Coulomb repulsion. Furthermore, our results show that the exciton binding energy and size are not related in a simple way to the strength of the Coulomb interaction.