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arXiv:1601.00648 · Physical review. B./Physical review. B

Optical conductivity of the Hubbard chain away from half filling

Alexander C. Tiegel, Thomas Veness, Piet E. Dargel, A. Honecker, Thomas Pruschke, Ian P. McCulloch, Fabian H. L. Eßler

Published Mar 3, 2016• 11 citations
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Abstract

We consider the optical conductivity ${\ensuremath{\sigma}}_{1}(\ensuremath{\omega})$ in the metallic phase of the one-dimensional Hubbard model. Our results focus on the vicinity of half filling and the frequency regime around the optical gap in the Mott insulating phase. By means of a density-matrix renormalization group implementation of the correction-vector approach, ${\ensuremath{\sigma}}_{1}(\ensuremath{\omega})$ is computed for a range of interaction strengths and dopings. We identify an energy scale ${E}_{\mathrm{opt}}$ above which the optical conductivity shows a rapid increase. We then use a mobile impurity model in combination with exact results to determine the behavior of ${\ensuremath{\sigma}}_{1}(\ensuremath{\omega})$ for frequencies just above ${E}_{\mathrm{opt}}$ which is in agreement with our numerical data. As a main result, we find that this onset behavior is not described by a power law.

DOI
10.1103/physrevb.93.125108

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We consider the optical conductivity in the one-dimensional Hubbard model in the metallic phase close to half-filling. In this regime, most of the spectral weight is located at frequencies above an energy scale Eopt{E}_{\mathrm{opt}}Eopt​ that tends towards the optical gap in the Mott insulating phase for vanishing doping. Using the Bethe ansatz, we relate Eopt{E}_{\mathrm{opt}}Eopt​ to thresholds of particular kinds of excitations in the Hubbard model. We then employ a mobile impurity model to analyze the optical conductivity for frequencies slightly above these thresholds. This entails generalizing mobile impurity models to excited states that are not the highest weight with regards to the SU(2) symmetries of the Hubbard chain, and that occur at a maximum of the impurity dispersion.
We combine well-controlled analytical and numerical methods to determine the optical conductivity of the one-dimensional Mott-Hubbard insulator at zero temperature. A dynamical density-matrix renormalization group method provides the entire absorption spectrum for all but very small coupling strengths. In this limit we calculate the conductivity analytically using exact field-theoretical methods. Above the Lieb-Wu gap the conductivity exhibits a characteristic square-root increase. For small to moderate interactions, a sharp maximum occurs just above the gap. For larger interactions, another weak feature becomes visible around the middle of the absorption band.
We combine well-controlled analytical and numerical methods to determine the optical conductivity of the one-dimensional Mott-Hubbard insulator at zero temperature. A dynamical density-matrix renormalization group method provides the entire absorption spectrum for all but very small coupling strengths. In this limit we calculate the conductivity analytically using exact field-theoretical methods. Above the Lieb-Wu gap the conductivity exhibits a characteristic square-root increase. For small to moderate interactions, a sharp maximum occurs just above the gap. For larger interactions, another weak feature becomes visible around the middle of the absorption band.
We employ dynamical density-matrix renormalization-group (DDMRG) and field-theory methods to determine the frequency-dependent optical conductivity in one-dimensional extended, half-filled Hubbard models. The field-theory approach is applicable to the regime of ``small'' Mott gaps which is the most difficult to access by DDMRG. For very large Mott gaps the DDMRG recovers analytical results obtained previously by means of strong-coupling techniques. We focus on exciton formation at energies below the onset of the absorption continuum. As a consequence of spin-charge separation, these Mott-Hubbard excitons are bound states of spinless, charged excitations (``holon-antiholon'' pairs). We also determine exciton binding energies and sizes. In contrast to simple band insulators, we observe that excitons exist in the Mott-insulating phase only for a sufficiently strong intersite Coulomb repulsion. Furthermore, our results show that the exciton binding energy and size are not related in a simple way to the strength of the Coulomb interaction.
Applying newly developed dynamical density matrix renormalization group techniques at zero and finite temperatures to a Hubbard-Holstein model at half filling, we examine the optical conductivity of a typical one-dimensional Mott insulator Sr2CuO3{\text{Sr}}_{2}{\text{CuO}}_{3}Sr2​CuO3​. We find a set of parameters in the Hubbard-Holstein model, which can describe optical conductivity for both Mott-gap excitation in the high-energy region and phonon-assisted spin excitation in the low-energy region. We also find that electron-phonon interaction gives additional broadening in the temperature dependence of the Mott-gap excitation.