Generation, manipulation and detection of quantum states of light lies at the heart of modern physical sciences. There is a global effort on discovering material platforms that will result in a quantum advantage over the classical implementations for certain useful problems in cryptography, communications and computing. An avenue being explored is the generation of single-photons for practical quantum computing and communications applications. Aluminium nitride (AlN) is one of the promising materials as it is compatible with CMOS processes, hosts crystal defects as qubit candidates within its wide bandgap and offers respectable second- and third-order nonlinearity coefficients. Combined with its high refractive index, large piezoelectric coefficients and considerable thermal conductivity, it is an ideal device platform for controllable and deterministic single-photon source implementations. In this thesis, I will present my work on creation of single-photon emitters in AlN through ion implantation and annealing, followed by the characterisation of the created defects via confocal microscopy. A design and fabrication methodology for increasing the brightness of such emitters through micro/nanofabrication will be explored, and preliminary results on brightness enhancement from native defects in AlN will be presented. A 4-inch process for AlN-on-sapphire platform will be outlined with the aim of providing a scalable integrated photonics platform for possible single-photon source implementations in AlN. This work builds a foundation of theoretical and experimental basis for future studies, both for crystal defects in AlN, as well as four-wave mixing AlN PICs for high-performance single-photon generation.
Generation, manipulation and detection of quantum states of light lies at the heart of modern physical sciences. There is a global effort on discovering material platforms that will result in a quantum advantage over the classical implementations for certain useful problems in cryptography, communications and computing. An avenue being explored is the generation of single-photons for practical quantum computing and communications applications. Aluminium nitride (AlN) is one of the promising materials as it is compatible with CMOS processes, hosts crystal defects as qubit candidates within its wide bandgap and offers respectable second- and third-order nonlinearity coefficients. Combined with its high refractive index, large piezoelectric coefficients and considerable thermal conductivity, it is an ideal device platform for controllable and deterministic single-photon source implementations. In this thesis, I will present my work on creation of single-photon emitters in AlN through ion implantation and annealing, followed by the characterisation of the created defects via confocal microscopy. A design and fabrication methodology for increasing the brightness of such emitters through micro/nanofabrication will be explored, and preliminary results on brightness enhancement from native defects in AlN will be presented. A 4-inch process for AlN-on-sapphire platform will be outlined with the aim of providing a scalable integrated photonics platform for possible single-photon source implementations in AlN. This work builds a foundation of theoretical and experimental basis for future studies, both for crystal defects in AlN, as well as four-wave mixing AlN PICs for high-performance single-photon generation.
Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, we report the generation and direct integration of QEs in an aluminium nitride-based photonic integrated circuit platform. For individual waveguide-integrated QEs, we measure an off-chip count rate exceeding 6×104 counts per second (cps) (saturation rate > 8.6×104 cps). In an unpatterned thin-film sample, we measure antibunching with g(2)(0)∼0.05 and photon count rates exceeding 8×105 cps (saturation rate > 1×106 cps). Although spin and detailed optical linewidth measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.
Single-photon emitters (SPEs) constitute a foundational resource for quantum technologies, including secure communication, photonic quantum computing, and emerging quantum network architectures. A wide range of quantum materials, from atom-like point defects in bulk crystals to excitonic states in low-dimensional semiconductors, now provide bright, coherent, and scalable sources of non-classical light. Meanwhile, advances in photonic integration have enabled efficient routing, filtering, and on-chip manipulation of these emitters. From this perspective, we survey and discuss the technological landscape in which solid-state emitters interface with quantum sensing, quantum communication, quantum computation, and emerging photonic AI platforms. Further, we discuss the materials landscape underpinning modern single-photon sources from the zero-dimensional, one-dimensional, two-dimensional and three-dimensional materials. Lastly, we highlight key integration pathways for these single-photon emitters into scalable quantum photonic systems.
In the past decades quantum optics has been at the forefront of quantum innovative technologies. For practical applications, scalable platforms for implementation of quantum optical circuits are vital. This thesis presents two new platforms for scalable implementation of quantum optical circuits, namely, modular approach and monolithic integration. Here, we take the first steps towards the integration of three main elements of every quantum optics circuits: Single-photon emitters, single-photon detectors, and quantum logics. Until now, most quantum optical circuits used separate platforms for single-photon generation and detection. The main challenge in the integration of these technologies, which have different requirements, has slowed down the research in the field. Here, we integrate sources and detectors by first fabricating the devices on their own platform and then transferring and combining them together. Plasma enhanced chemical vapor deposition of silicon nitride followed by etching optical waveguides connect these elements. Removing the Poissonian optical excitation field from the quantum circuit is necessary for integration. Classical optical excitation can be avoided if the sources are electrically pumped. However, fabrication of high-quality electrically pumped sources, suitable for integration, has been limited. The experiments described in chapter 4 are our first step towards addressing the mentioned problem. Defect-free nanowires are grown on <100> direction and their optoelectronic performance are characterized. Nanowire quantum dots, thanks to their waveguiding, purity, coherence and their potentials for deterministic integration with other optical circuits, are promising single-photon sources for on-chip quantum optics. However, precise control of the emission energy of the quantum dots by growth has not become possible yet. Chapter 5 describes a method for on-chip tuning of emission energy of nanowire quantum dots using strain fields. We show the emission energy of independent nanowire quantum dots can be brought into degeneracy without affecting their single-photon emission properties. The quantum optical components have to be routed and connected together to form functional circuits. On a chip, this is usually carried out using optical waveguides. Moreover, manipulation of single photons has to be done in a scalable fashion. Again optical waveguides and ring resonators are very good candidates for this task. Therefore, understanding the behavior of these circuits such as their losses, polarization dependence, and temperature behavior is important. The experiment described in chapter 6 studies the behavior of plasma enhanced silicon nitride waveguides in cryogenic temperatures. We concluded in this chapter that due to weak thermo-optic sensitivity of silicon nitride at cryogenic temperatures, the available thermal budget on the system should be carefully considered. An important step in achieving a scalable platform for quantum optical circuits is deterministic and efficient integration of single-photon sources. In chapter 7, we demonstrate successful integration of III-V nanowire quantum dots with silicon nitride waveguides. The nanowires are deterministically selected and transferred from the original growth chip to the new substrate where they are integrated with low-loss silicon nitride waveguides. Our measurements show that the integrated sources preserve their high quality emission properties. In chapter 8, we describe an alternative approach: amodular method for scalable quantum optics. The proposed technique is based on coupling the single-photon from sources into optical fibers where the photons can be processed and then fed into the single-photon detectors. This approach has high flexibility and is easier to implement but as described in the chapter, at the moment, losses in the interfaces between optical fibers and single-photon sources are a major limiting factor. We conclude the thesis with some possible future directions and exciting new results on integration of single-photon detectors with sources and waveguides. Finally, primary results on on-chip single-photon filtering and removal of the optical excitation field are demonstrated.
The work presented in this thesis aims to integrate sources and detectors of nonclassical states of light into a single photonic chip. Correlated pairs of single photons are among the most used sources in many quantum optics and quantum information experiments but their integration with detectors still remains a challenging task. In the first part of the thesis we exploit the generation of correlated pairs of photons in the visible spectrum using an integrated Silicon Nitride microring resonator. As the fabrication process of our sources is fully compatible with back-end CMOS technology, we also discuss the unique possibility of integration with silicon avalanche photodectors to provide a platform for commercially available, fully integrated, analogue quantum simulator working at room temperature. The drawback of universal quantum computation with single photons is its probabilistic nature that increases the technological complexity to obtain complete on chip integration of all necessary components to prepare, manipulate and measure quantum states of light. On the other hand, quantum information processing with continuous variables is completely deterministic. Therefore, in the second part of this work we report design, fabrication and experimental verification of an integrated source of broadband squeezed state of light on a photonic chip. We numerically investigate the amount of obtained squeezing and spurious noise that prevents us to observe shot noise reduction at short sideband frequencies. Additionally, we propose a design to extend our work towards hybridization with discrete variables to obtain qubits that can be protected against errors.
Abstract Single-photon emitters (SPEs) constitute a foundational resource for quantum technologies, including secure communication, photonic quantum computing, and emerging quantum network architectures. A wide range of quantum materials, from atom-like point defects in bulk crystals to excitonic states in low-dimensional semiconductors, now provide bright, coherent, and scalable sources of non-classical light. Meanwhile, advances in photonic integration have enabled efficient routing, filtering, and on-chip manipulation of these emitters. From this perspective, we survey and discuss the technological landscape in which solid-state emitters interface with quantum sensing, quantum communication, quantum computation, and emerging photonic artificial intelligence platforms. Further, we discuss the materials landscape underpinning modern single-photon sources from the zero-dimensional, one-dimensional, two-dimensional and three-dimensional materials. Lastly, we highlight key integration pathways for these SPEs into scalable quantum photonic systems.
The discovery of room-temperature single photon emission from color centers in diamond has in recent years boosted research interest in this renowned material in photonics and quantum community and beyond. Following understanding some basic principles of how the color centers work, new challenges arose: designing and fabricating real devices that leverage the unrivaled properties that diamond possesses. Due to this material's extreme physical hardness and its chemical resistance to etchants, the established semiconductor technologies cannot straightforwardly answer to the call for scalable and reliable fabrication of micro- and nano-photonic devices in single crystal diamond. In this thesis, we first demonstrate an unconventional polishing protocol with ion beam etching, which makes possible wafer-scale fine finishing of diamond substrates, the starting point for any subsequent processing. Following this we present the experimental observation of self-organized nanotextures on diamond induced by ion beam irradiation, a lithography-free approach for nanoengineering periodic structures. Regarding device fabrication, we obtained free-standing micro- and nano-photonic structures using angled reactive ion etching, facilitated by a novel and reproducible Faraday cage design. We also propose possible designs to interconnect individual components in hope of realizing a photonic integrated circuit in the future. Last but not least, we present spectroscopic characterization of single and ensemble color centers either grown by microwave plasma chemical vapor deposition, or fabricated by ion implantation with subsequent high-temperature annealing, which are the fundamental building blocks for quantum applications. Photoluminescence spectra that, to our knowledge, are not seen in literature were recorded for ensemble silicon-vacancy centers at cryogenic temperature, signifying potentially unknown mechanism for tuning the optical transitions, and unexplored possibilities with this exciting material platform for quantum technologies.